Group nitrides

Wallace C H 1998 The rapid solid-state synthesis of group III and transition metal nitrides at ambient and high pressures PhD Dissertation University of California, Los Angeles... 

Vogel D, Kruger P and Pollmann J 1997 Structural and electronic properties of group-ill nitrides Phys. Rev. B 55 12 836, and references therein... 

Gillis H P, Choutov D A and Martin K P 1996 The dry etching of Group Ill-Nitride wide bandgap semiconductors J. Mater. 48 50-5... 

Only thallium of the Group III elements is affected by air at room temperature and thalliumflll) oxide is slowly formed. All the elements, however, burn in air when strongly heated and, with the exception of gallium, form the oxide M2O3 gallium forms a mixed oxide of composition GaO. In addition to oxide formation, boron and aluminium react at high temperature with the nitrogen in the air to form nitrides (BN and AIN). 

Most hafnium compounds have been of slight commercial interest aside from intermediates in the production of hafnium metal. However, hafnium oxide, hafnium carbide, and hafnium nitride are quite refractory and have received considerable study as the most refractory compounds of the Group 4 (IVB) elements. Physical properties of some of the hafnium compounds are shown in Table 4. 

Although there are several hundred biaary nitrides, only a relative few ternary bimetallic metal nitrides are known (6). A group of ternaries of the composition where M is an alkah, alkaline-earth, or a rare-earth metal and M is a transition or post-transition metal, have been synthesized (6). 

The nitrides of Groups 4(IVB) and 5(VB) elements form at ca 1200°C. The nitrides of magnesium and aluminum form at 800°C. Aluminum nitride, obtained by beating aluminum powder in the presence of ammonia or nitrogen at 800—1000°C, is formed as a white to grayish blue powder. A grade of... 

The emphasis in the approaches to boron nitride [10043-11 -5] BN, precursors has been concentrated on cycHc compounds. There have been recent reports of trimethylsilyl-substituted aminoboranes being evaluated as B—N precursors. These are linear borylamines containing up to four boron atoms. Compounds were also synthesized with free —NH2 groups amenable to condensation with either dihaloboranes or dihaloborazines (65) and offering suitable monomers for linear B—N polymer synthesis and borazine-ring-linking appHcations. 

This group is exemplified by nitrides, carbides, and phosphides. Nitrides will react with water to generate ammonia (NH3), which can be released depending on how alkaline the solution becomes. It is unlikely that sufficient NH3 will be produced under normal circumstances to create a hazard. 

Unlike nitric oxide, NO, the monomeric radical sulfur nitride, NS, is only known as a short-lived intermediate in the gas phase. Nevertheless the properties of this important diatomic molecule have been thoroughly investigated by a variety of spectroscopic and other physical techniques (Section 5.2.1). The NS molecule is stabilized by coordination to a transition metal and a large number of complexes, primarily with metals from Groups 6, 7, 8 and 9, are known. Several detailed reviews of the topic have been published. ... 

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