Indium CIGS

The deposition of CBD CdS as a junction layer for solar cell devices has proven to be a very successful industrially acceptable technique. Kessler et al.13 reported on copper indium gallium diselenide (CIGS) mini-modules (area = 16cm2) with a conversion efficiency of 16.6%, wherein CBD CdS was used as a junction layer. Basol et al.14 fabricated 9.3% active-area efficient thin-film flexible CuInSe2 (CIS) solar cells (specific power >1 kW/kg) on lightweight, flexible metallic, and polymeric (polymide-based) substrates using CBD CdS. 

CIGS Copper indium gallium selenide 4,4 -Dicarboxy-2,2 -biquinoline... 

Another area of development is in lower-cost thin- and ultrathin-film designs. One such product is made by Nanosolar of copper indium gallium selenide (CIGS), which is claimed to achieve up to 19.5% efficiency and is as thin as a newspaper. This claim is yet to be proved. The collector cost is also reduced, because the substrate material on which the ink is printed is much less expensive than the stainless steel substrates that are often used in thin-film solar panels. The manufacturer claims a five- to tenfold reduction in the collector cost (about 1/W) compared to conventional PV cells. 

Nanosolar s ultrathin-film design is made of copper indium gallium sele-nide (CIGS) and is claimed to achieve up to 19.5% efficiency. Although such... 

CIGS Copper indium gallium selenide CO Condenser or compressor COz Carbon dioxide... 

Fig. 12. Spectral response regions for various photovoltaic technologies. CIG stands for cadmium indium gallium selenide.

Nonstoichiometric copper indium gallium diselenide [Cu(In,Ga) Se2—abbreviated as CIGS or CIS if the gallium is absent] is another promising thin-film PV material.f Large grains can be produced on foreign... 

Al/Si Aluminosilicate CIGS Copper-Indium-Gallium-Diselenide... 

Abstract Photovoltaic cells have been dominated so far by solid state p-n junction devices made from silicon or gallium arsenide wavers or thin film embodiments based on amorphous silicon, CdTe and copper indium gallium diselenide (CIGS) profiting from the experience and material availability of the semiconductor industry. Recently there has been a surge of interest for devices that are based on nanoscale inorganic or organic semiconductors commonly referred to as bulk junctions due to their interconnected three-dimensional structure. The present chapter describes the state of the art of the academic and industrial development of nanostructured solar cells, with emphasis in the development of the dye-sensitized nanocristalline solar cell. 

The thin-film materials that are discussed in this chapter can be used in depositing one or more thin layers of material on a substrate in the following PV cell technologies (i) CdTe, (ii) copper indium (galUum) selenide (CIS or CIGS), and (iii) Dye-sensitized solar cell (DSSC). The thickness of such layers can vary from a few nanometers to tens of micrometers. 

Variety of semiconducting material such as single and poly crystal silicon, amorphous silicon, Cadmium-Telluride (CdTe), Copper Indium/Gal-lium Di Selenide (CIGS) have been employed to form inorganic solar cell based on layers configuration to enhance absorption efficiency, conversion efficiency, production and maintenance cost. 

Most of the flexible recharging devices existing on the market are equipped with CIGS (copper indium gallium selenide) PV cells based on amorphous sUicon (FlexceU, PowerFilm Solar ). 

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