Copper indium-gallium diselenide CIGS

The deposition of CBD CdS as a junction layer for solar cell devices has proven to be a very successful industrially acceptable technique. Kessler et al.13 reported on copper indium gallium diselenide (CIGS) mini-modules (area = 16cm2) with a conversion efficiency of 16.6%, wherein CBD CdS was used as a junction layer. Basol et al.14 fabricated 9.3% active-area efficient thin-film flexible CuInSe2 (CIS) solar cells (specific power >1 kW/kg) on lightweight, flexible metallic, and polymeric (polymide-based) substrates using CBD CdS. 

Abstract Photovoltaic cells have been dominated so far by solid state p-n junction devices made from silicon or gallium arsenide wavers or thin film embodiments based on amorphous silicon, CdTe and copper indium gallium diselenide (CIGS) profiting from the experience and material availability of the semiconductor industry. Recently there has been a surge of interest for devices that are based on nanoscale inorganic or organic semiconductors commonly referred to as bulk junctions due to their interconnected three-dimensional structure. The present chapter describes the state of the art of the academic and industrial development of nanostructured solar cells, with emphasis in the development of the dye-sensitized nanocristalline solar cell. 

Nonstoichiometric copper indium gallium diselenide [Cu(In,Ga) Se2—abbreviated as CIGS or CIS if the gallium is absent] is another promising thin-film PV material.f Large grains can be produced on foreign... 

Al/Si Aluminosilicate CIGS Copper-Indium-Gallium-Diselenide... 

---