Indium electronic properties

Indium Tin Oxide Composition and Surface Electronic Properties 492... 

Figure 9.2 Temperature history of a CPMD simulation of InP indicating the melting of the crystal into a liquid and the quenching of the liquid into an amorphous solid. [Reprinted by per mission from L. J. Lewis, A. De Vita, and R. Car, Structure and Electronic Properties of Amorphous Indium Phosphide from First Principles, Phys. Rev. B 57 (1998), 1594 (Copyright 1994 by the American Physical Society).]...

L. J. Lewis, A. De Vita, and R. Car, Structure and Electronic Properties of Amorphous Indium Phosphide from First Principles, Phys. Rev. B 57 (1998), 1594. 

Mardalen, J. et al.. Structure and electronic-properties of polythiophene and poly(3-alkylthiophene) films electropolymerized on indium tin oxide (Ito) glass at elevated potentials, Macwmol. Chem. Phys. 194, 2483-2495, 1993. 

Roy, S., 8c Springborg, M. (2003). A theoretical study of structural and electronic properties of naked stoichiometric and non-stoichiometric Indium Phosphide clusters. The Journal of Physical Chemistry B, 107, 2771-2779. 

Pocza J F, Barna A and Barna P B 1969 Formation processes of vacuum deposited indium films and thermodynamical properties of submicroscopic particles observed by in situ electron microscopy J. Vac. Sc/. Techno . 6 472... 

Extensive structural, optical, and electronic studies on the chalcopyrite semiconductors have been stimulated by the promising photovoltaic and photoelectrochem-ical properties of the copper-indium diselenide, CuInSe2, having a direct gap of about 1.0 eV, viz. close to optimal for terrestrial photovoltaics, and a high absorption coefficient which exceeds 10 cm . The physical properties of this and the other compounds of the family can be modulated to some extent by a slight deviation from stoichiometry. Thus, both anion and cation deficiencies may be tolerated, inducing, respectively, n- and p-type conductivities a p-type behavior would associate to either selenium excess or copper deficiency. 

The low-melting-point (157 °C), silver metal is mainly used in alloys to decrease the melting point. Combined with tin, lead, and bismuth to produce soldering metal for wide temperature ranges. The element is highly valuable in the electronics age as its unique properties are ideal for solar cells, optoelectronics, and microwave equipment. The arsenide is used in lasers and is also suitable for transistors. ITO (indium tin oxide) is a transparent semiconductor with wide application in displays, touchscreens, etc. In the household, indium as an additive prevents the tarnishing of silverware. Some electronic wristwatches contain indium batteries. 

Davis, J. G. Bridenbaugh, P. M. Wagner, S. 1978. Electrical and optical properties of copper indium ditelluride crystal grown from near-stoichiometric compositions. I. Electron. Mater. 7 39-45. 

T. Nagamoto, Y. Maruta, and O. Omoto, Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility, Thin Solid Films, 192 17-25 (1990). 

---