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Impurity potentials

Meng J, Pandey R, Vail J M and Kunz A B 1989 Impurity potentials derived from embedded quantum olusters Ag" and Cu" transport In alkali halides J. Phys. Condens Matter 1 6049-58... [Pg.2234]

Fig.l. Results for the system Zn/Cu. Calculated charge transfer from (shown as positive) or towards (shown as negative) the impurity site obtained according to eqn.(2) of text (dashed line) as a function of the potential shift applied on the impurity potential. The variation given by eqn.l is indicated by the solid line while the dotted line indicates the solution which includes corrections due to the redistribution of the impurity charge. [Pg.481]

After the usual corrections for analyte impurity, potential drop in the solution and volume increase during titration, the experimental results were in perfect agreement with the theoretical hyperbolic curve. [Pg.220]

The truncated peptide analogs were used to demonstrate the specificity of the method and to evaluate the limit of quantitation of potential impurities. Potential impurities were spiked into a solution of IB-367 at 0.05%, 0.1%, 0.2%, 0.5%, and 1% to assay the linearity of potential impurities at low concentrations. The method exhibited acceptable linearity for impurities from 0.05 to 1%. The relative response factors of these analogs were assessed to determine area normalization feasibility. [Pg.185]

MS delivers both information about the mass and the isotope pattern of a compound and can be used for the structural analysis upon performance of MS/MS experiments. Therefore, it is a valuable tool for the identification and characterization of an analyte as well as for the identification of impurities. Potential applications are the identification of IL in fhe quality control or in environmental studies. Unwanted by-products formed during the s)mthe-sis or by the hydrolysis of components of the ILs can be identified by this method. The analysis of fhe IL itself is also a prerequisite for the analysis of compounds dissolved in fhese media, as will be ouflined in the section 14.4. Beside the identification of fhe ILs, a characterization of different properties like water miscibility and the formation of ion clusfers, providing valuable information abouf fhe molecular structure of the IL, can be performed by means of MS techniques. The majority of studies reported up to now have dealt with ILs encompassing substituted imidazolium or pyridinium cations, therefore fhe following discussion concentrates on these compounds unless otherwise stated. [Pg.378]

The evaluation of the A s is the next step. These are obtained from the one-electron impurity Schrodinger equation. Using an impurity potential h, with an impurity energy ,... [Pg.59]

We should also briefly discuss the reliability of PC threshold measurements for determining ,. The problem here is that for each temperature the spectroscopic data (Atheoretical expression, such as that found in Eq. (45). Above T = 0, when phonons are involved, there is no well-accepted theory of the photon capture cross section to use for data fitting. In fact, even at T = 0, the theoretical situation is ambiguous because the exact form of the impurity potential is not known. Thus, unless the PC threshold data are very steep, the energies derived from them may be hard to determine with great accuracy. [Pg.123]

Fig. 1. Self energy of the election Green function averaged over impurity potential inside the grains and over tunneling elements between the grains. Averaging over the impurity potential is represented by the dotted line (a) while tunneling elements are represented by crossed circles (b). Fig. 1. Self energy of the election Green function averaged over impurity potential inside the grains and over tunneling elements between the grains. Averaging over the impurity potential is represented by the dotted line (a) while tunneling elements are represented by crossed circles (b).
Hu results from the effects of impurities with random potential strength Ui and positions x. The potential strength is characterized by / = 0 and UiUj = U mp5itj, and includes a forward and a backward scattering term proportional to po and pi, respectively. The disorder average of the impurity potential U(x) follows then to be given by U(x) = 0 and... [Pg.95]

Transport in one-channel quantum wires, where electrons form a Luttinger liquid, differs significantly from the Fermi liquid case. In particular, impurity effects are stronger in Luttinger liquids, and even a weak impurity potential... [Pg.147]

Here, q is the inverse of a screening length related to the valence electron density which contributes to the screening and /u. is a Lagrange multiplier controlling the total number of particles. The boundary conditions to be used with Equation (23) are that V(r) must match Vc r) at Rs and that rV(r) -> -1 as r -> 0. Once we have solved the Thomas-Fermi equation, we have calculated the screened function, defined as the bare impurity potential divided to the screened one, namely Vb/V. [Pg.247]

For a specific example of an impurity potential with finite range we choose a Gaussian. Taking matrix elements between plain wave states kp and k F gives... [Pg.153]

Technical malathion (-95% pure) contains several impurities. Of the impurities isolated, four compounds have been shown to be important in insecticide toxicology (Figure 4.5). Umetsu et al. (1977) demonstrated that all of these impurities potentiated the toxicity of purified malathion in rats, with compounds C and D being more active. Further studies showed that these impurities inhibited serum malathion carboxylesterase and liver malathion carboxylesterase in vitro and in vivo in rats (Talcott et al., 1979), which would explain the potentiating activity observed with these impurities because these carboxylesterases... [Pg.34]

In order to improve the accuracy of the calculated acceptor levels in silicon and germanium, particularly for the even-parity ones, Lipari et al. [38] have used a screened point-charge impurity potential based on the wave-vector-dependent dielectric function calculated for Si, Ge, GaAs and ZnSe [65]. They make use of a phenomenological parameter a, adjusted to fit the calculated q-dependent dielectric function e(q), in this potential. The resulting potential in real space is ... [Pg.154]

If the impurity potential is smooth, the process of scattering on them proceeds quasi-classically. In this case no real scattering takes place and the impurity effect may be reduced to the appearance of a random phase of the electron wave function. As has been shown by Zawadowski (1), such impurities do not affect the thermodynamics of the one-dimensional system, in which, however, no phase transitions exist. The finite temperature of the transition arises due to three-dimensional effects which establish the coherent state in the whole volume. The impurities cause the phase shift on each thread, and, as a result, the coherence drops and the transition temperature diminishes. [Pg.177]

In case The impurity potential is rather short-ranged, the scattering with the alternative electron momentum should not be neglected. Such impurities produce a significant effect upon the superconducting transition temperature, which turns to zero at a certain concentration of impurities. [Pg.178]

If the impurity potential is short ranged it suffices for the electron to jump on the neighbouring chain to get into a completely new localizing potential. Since the localization radius is of the order of the electron can move at a distance of the order... [Pg.201]

If the impurity potential has a long range >> d one must take /3 7C. Then it follows... [Pg.202]

That concerns the impurity potential, so a real semimetal can contain neutral impurities of atomic range as well as charged impurities with a screened Coulomb potential. The Fourier component of the latter has the form... [Pg.207]

In a bulk semiconductor, photoexcitation generates electron-hole pairs which are weakly bounded by Coulomb interaction (called an exciton). Usually one can observe the absorption band of an exciton only at low temperature since the thermal energy at room temperature is large enough to break up the exciton. When the exciton is confined in an energy potential, the dissociation probability reduces and the overlap of the electron and hole wavefunction increases, which is manifested by a sharper absorption band observable at room temperature. This potential can be due to either a deformation in the lattice caused by an impurity atom or, in the present case, the surface boundary of a nanocluster. The confinement of an exciton by an impurity potential (called bound exciton) is well known in the semiconductor literature [16]. There is considerable similarity in the basic physics between confinement by an impurity potential and confinement by physical dimension. The confinement effects on the absorption cross section of a nanocluster are discussed in Section II. [Pg.181]

DESREUMAUX, J., CALAIS, M., ADRIANO, R., TRAMBAUD, S., KAPPENSTEIN, C., NGUEFACK, M., Reactions of sodium-potassium alloys with inert gas impurities. Potential hazards after oxidation, Eur. Jour. Inorg. Chem. (2000) pp. 2031-2045. [Pg.182]

When an impurity is introduced, the total potential is a sum of the host and the impurity potentials. Because the host potential is uniquely determined by the unperturbed host electron density, and the impurity potential is determined by the position and charge of the impurity nucleus, the energy of the host with impurity h,imp is a functional of the host electron density and also a function of the impurity... [Pg.166]

The "impurity potential" models neglect the problem of boundaries. Ong, Verma, and Maki and independently Gor kov suggested that boundaries between pinned and unpinned regions are the source of voltage noise. In the theory of Ong, Verma, and Maki, CDW phase vortices generated near the electrode contacts move transverse to the current. The vortices serve to convert the CDW current into normal current which flows into the pinned regions neighbouring the contacts. [Pg.282]


See other pages where Impurity potentials is mentioned: [Pg.480]    [Pg.480]    [Pg.617]    [Pg.252]    [Pg.50]    [Pg.602]    [Pg.31]    [Pg.149]    [Pg.154]    [Pg.370]    [Pg.393]    [Pg.102]    [Pg.138]    [Pg.125]    [Pg.205]    [Pg.218]    [Pg.219]    [Pg.220]    [Pg.221]    [Pg.480]    [Pg.480]    [Pg.380]    [Pg.252]    [Pg.989]    [Pg.16]   
See also in sourсe #XX -- [ Pg.16 ]




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