Hydrogen gas sensing

Nogami, M., Matsushita, H., Kasuga, T., and Hayakawa, T., Hydrogen gas sensing by sol-gel-derived proton-conducting glass membranes, Electrochem. Solid-State Lett., 2, 415 17 (1999). 

The latter direction was initiated by Danielsson et al. (1979), who combined immobilized hydrogenase with a hydrogen gas-sensing MOSFET. Since the MOSFET requires a high operational temperature it was separated from the enzyme layer. Caras and Janata (1980) directly integrated the microelectronic sensor and the immobilized... 

Wongchoosuk, C., Wisitsoraat, A., Phokharatkul, D., Tuantranont, A. and Kerdcharoen, T. (2010) Multi-walled carbon nanotube-doped tungsten oxide thin films for hydrogen gas sensing , Sensors, 10,7705-15. 

Naderi, N., Hashim, M. R. and Amran, T. S. T. Enhanced physical properties of porous silicon for improved hydrogen gas sensing , (2012) Superlattice. Microsl 51,626-636. 

Laith Al-Mashat and Debiemme-Chouvy C., Electropolymerized polypyrrole nanowires for hydrogen gas sensing,/ Phys. Chem. C, 2012, 116[24), 13388. 

Graphene-based composite materials have been studied for gas sensors as well. For example, Pt/ RGO/SiC-based devices were fabricated for hydrogen gas sensing (Shaflei et al. 2010). Experiments have shown that the flexible gas sensor can also be designed on the basis of RGO (Dua et al. 2010). 

Jeon KJ, Jeun M, Lee E, Lee JM, Lee KI, von Allmen P, Lee W (2008) Finite size effect on hydrogen gas sensing performance in single Pd nanowires. Nanotechnology 19 4955011 955016 Jeon KJ, Lee JM, Lee E, Lee W (2009) Individual Pd nanowire hydrogen sensors fabricated by electron-beam lithography. Nanotechnology 20 1355021-1355025... 

Lee E, Lee JM, Noh JS, Joe JH, Lee W (2010b) Hydrogen gas sensing performance of Pd-Ni alloy thin films. Thin Sohd Films 519 880-884... 

Noor U., Uttamchandani D., Sol-gel derived thin films for hydrogen sulfide gas sensing, J. Sol-Gel Sci. Technol. 1998 11 177-183. 

We recently published a chapter in the book Silicon Carbide Recent Major Advances by Choyke et al. [19] that describes SiC gas sensor applications in detail. In this book, we emphasize device properties applications are only briefly reviewed at the end. The device and gas sensing properties of various field-effect chemical gas sensing devices based on SiC are described, and other wide bandgap material devices are reviewed. The detection principle and gas response is explained, and the buried channel SiC-FET device is described in detail. Some special phenomena related to the high-temperature influence of hydrogen at high temperature are also reported. 

The p-n junction diodes employing catalytic metal contacts have recently been tested for their gas-sensing properties [66, 67]. The catalytic metal contact was placed directly on the semiconductor in this device, as shown in Figure 2.6. In general the response appears to be lower than for the traditionally used devices described earlier in this section. However, this means that for any catalytic metal used as an ohmic contact to a p-n junction, it can be expected that the /-Vcharacteristics will be influenced, for example, in a hydrogen-containing atmosphere. 

As may be seen from Table I, the response times in hydrogen exposures of capacitor structures tend to be comparable to those of diode structures however, the capacitor structures can be susceptible to the HID phenomenon (16) especially at elevated temperatures. In general, the presence of water vapor or oxygen reduces the response and recovery times of both device classes. There are differences in gas sensing ability between the two structures. For example,. the Pd/TiOx/Si and Pd/SiOx/Si diodes do not respond to CO in... 

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