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Buried channel

Figure 15. Photovoltaic detector potential well. The example in this figure is the p-n junction of a n-channel CCD. The x-y-z axes match the orientation shown in Fig. 5. The charge generated in the 3-D volume of a pixel is swept toward a 2-D layer, which is the buried channel that is 0.25-0.5 pm from the front surface of the detector. The z-direction potential is created by the p-n junction combined with the voltages on the polysilicon wires deposited on the frontside of the CCD (not shown in this figure). Figure 15. Photovoltaic detector potential well. The example in this figure is the p-n junction of a n-channel CCD. The x-y-z axes match the orientation shown in Fig. 5. The charge generated in the 3-D volume of a pixel is swept toward a 2-D layer, which is the buried channel that is 0.25-0.5 pm from the front surface of the detector. The z-direction potential is created by the p-n junction combined with the voltages on the polysilicon wires deposited on the frontside of the CCD (not shown in this figure).
What makes EIM susceptible to be mistaken are configurations with regions, where no guided mode can be determined. If more than an estimate of the propagation constant is required, e.g. in order to calculate the half-beat length of a buried channel waveguide directional coupler configuration from the mode indices of the symmetric and anti-symmetric supermodes, EIM should be superseded by a more accurate method. [Pg.257]

W. Huang, H. A. Hans, and H. N. Yoon, Ananlysis of buried-channel waveguides and couplers scalar solution and polarization correction. Journal of Lightwave Technology 8, 642-648 (1990). [Pg.278]

We recently published a chapter in the book Silicon Carbide Recent Major Advances by Choyke et al. [19] that describes SiC gas sensor applications in detail. In this book, we emphasize device properties applications are only briefly reviewed at the end. The device and gas sensing properties of various field-effect chemical gas sensing devices based on SiC are described, and other wide bandgap material devices are reviewed. The detection principle and gas response is explained, and the buried channel SiC-FET device is described in detail. Some special phenomena related to the high-temperature influence of hydrogen at high temperature are also reported. [Pg.30]

The applied negative substrate bias depletes part of the n"-doped epilayer on top of the buried channel from mobile carriers. The conducting channel of the JFET device will then in fact extend also into this depleted epilayer. Then we can define the intrinsic gate of the device as the area in the epilayer, on top of the conducting channel, where the electrons have the highest energy. [Pg.46]

Figure 5.11 Effective channel mobility extracted from a 100 m/100lateral 4H-SiC FET with a buried channel structure. (After [29].)... Figure 5.11 Effective channel mobility extracted from a 100 m/100lateral 4H-SiC FET with a buried channel structure. (After [29].)...
Dramatic improvement in channel mobility in work [29] by using a buried channel for the first time resulted in the total resistance of SiC DIMOSFET dominated by the resistance of JFET region. Design of this region, which means the choice of spacing between two adjacent p-wells, becomes a task of finding a trade-... [Pg.167]

Fig. 20 Top left Schematic of a buried channels structure fabricated using photoacid p.2 and positive-resist p.3 (745nm/80fs). Top right Two-photon fluorescence micrograph of a vertical cross section, perpendicular to the channels (the channel-to-channel spacing is 8 xm) Bottom Two-photon micrographs of the structure at the surface and at a depth of 10 jim (the length of the channels is 50 p.m). The sections where the polymer has been removed appear dark in the images. Adapted from [214]. Reproduced with permission from AAAS... Fig. 20 Top left Schematic of a buried channels structure fabricated using photoacid p.2 and positive-resist p.3 (745nm/80fs). Top right Two-photon fluorescence micrograph of a vertical cross section, perpendicular to the channels (the channel-to-channel spacing is 8 xm) Bottom Two-photon micrographs of the structure at the surface and at a depth of 10 jim (the length of the channels is 50 p.m). The sections where the polymer has been removed appear dark in the images. Adapted from [214]. Reproduced with permission from AAAS...
Buried channel-fluorinated waveguides consisting of a single material can be fabricated by direct election beam writing, and we hope to develop novel optical devices by using dris method. [Pg.347]

A uniphase, buried-channel charge transfer device is disclosed in US-A-4229752 wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. [Pg.3]

In WO-A-8707082 it is pointed out that the device of US-A-4228365, discussed above, is relatively complex to fabricate and that the high voltage required to lower the electropotential barrier at the heterojunction between the wide and narrow bandgap materials could produce relatively large tunnel currents. Therefore, a different structure is proposed which also includes a buried channel and the capability of two colour operation. [Pg.4]

Alluvial plains and deltas, mainly in coastal areas (including buried channels) Groundwater from extensive alluvial aquifers (the most significant source of water in many areas of the world) Humid, arid As, Se, U Drainage, groundwater pumping Co, Cd, Cr, Pb, Mo, Ni, Sb, S042 ... [Pg.37]

G = PMOS buried-channel Ihrashold voltage adjust sets p-ehannd V (V. ... [Pg.78]

Davison, C.C. and Vonhof, J.A., 1978. Spatial and temporary hydrochemical variations in a semi-confined buried channel aquifer Esterhazy, Saskatchewan, Canada. Ground Water, 16(5) 341—351. [Pg.282]

Fig. 2.23 Parasound seismogram section recorded across an inactive meandering channel in the Bengal Fan. The sediments of the terrace were sampled by piston core 47KL marked by the black bar. Vertical exaggeration (VE) of sedimentary structures is 200. The ship s course is displayed above the seismogram section. The terrace exhibits features which might be interpreted as old buried channels. Modified after Breitzke (1997). Fig. 2.23 Parasound seismogram section recorded across an inactive meandering channel in the Bengal Fan. The sediments of the terrace were sampled by piston core 47KL marked by the black bar. Vertical exaggeration (VE) of sedimentary structures is 200. The ship s course is displayed above the seismogram section. The terrace exhibits features which might be interpreted as old buried channels. Modified after Breitzke (1997).
In this work, we report on the fabrication of buried channel waveguide lasers in Nd YAG ceramics by using a two line confinement approach. Light confinement has been achieved between two... [Pg.649]

McClennan, C.E. 1973. Great Erg buried channel on the New Jersey continental shelf A possible continuation of the Pleistocene SchuyUdU River to Wilmington Canyon. Geological Society of America, 5 194-195. [Pg.495]

McMaster, R.L., and Ashraf, A. 1973. Extent and formation of deeply buried channels on the continental shelf off southern New England. Journal of Geology, 81 374-379. [Pg.495]

Geophysical method Ground water exploration Water quality Porosity Permeability Temperature Flow rate and/or direction Buried channel Clay pockets in limestone Sand and gravel Basic igneous dykes... [Pg.47]

Rodenas A, Benayas A, Macdonald JR, Zhang J, Tang DY, Jaque D et al (2011) Direct laser writing of near-lR step-index buried channel waveguides in rare earth doped YAG. Opt Lett 36 3395-3397... [Pg.671]

Microneedles Applications and Devices, Fig. 2 (a) MicroChannel formed by bonding [6]. (b) Microchannels formed by buried channel technology (BCT) [6]... [Pg.2131]


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See also in sourсe #XX -- [ Pg.505 , Pg.518 , Pg.538 ]




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Burying

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