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High silicon nitrides

As noted, the oxidation resistance of silicon nitride ceramics depends on the type and concentration of the sintering aids. In materials designed for high temperature appHcations the specific weight gain resulting from oxidation upon a 500-h air exposure at 1200°C and 1350°C is about 1—2 g/m and 2—4 g/m, respectively. The kinetics of the oxidation process have been iavestigated (63,64) as has the corrosion resistance (65). Corrosion resistance is also dependent on material formulation and density. [Pg.323]

Creep Resistsince. Studies on creep resistance of particulate reinforced composites seem to indicate that such composites are less creep resistant than are monolithic matrices. Silicon nitride reinforced with 40 vol % TiN has been found to have a higher creep rate and a reduced creep strength compared to that of unreinforced silicon nitride. Further reduction in properties have been observed with an increase in the volume fraction of particles and a decrease in the particle size (20). Similar results have been found for SiC particulate reinforced silicon nitride (64). Poor creep behavior has been attributed to the presence of glassy phases in the composite, and removal of these from the microstmcture may improve the high temperature mechanical properties (64). [Pg.58]

The covalently-bonded silicon carbide, silicon nitride, and sialons (alloys of Si3N4 and AI2O3) seem to be the best bet for high-temperature structural use. Their creep resistance... [Pg.206]

High -performance engineering ceramics Diamond Dense alumina Silicon carbide Silicon nitride Zirconia Sialons... [Pg.164]

The very hard structural ceramics silicon carbide, SiC, and silicon nitride, Si3N4 (used for load-bearing components such as high-temperature bearings and engine... [Pg.169]

Fig. 6. Lateral stiffness vs. load data for a silicon nitride tip vs. mica surface in ultra-high vacuum. Solid line is fit of the JKR model to the data. Reprinted with pennission from ref. [67]. Fig. 6. Lateral stiffness vs. load data for a silicon nitride tip vs. mica surface in ultra-high vacuum. Solid line is fit of the JKR model to the data. Reprinted with pennission from ref. [67].
The high temperature tx-fi transformation of shock-activated silicon nitride powder has been investigated at temperatures of 1600 and 1700°C [84B01]. [Pg.172]

Fig. 7.8. High temperature conversion of a-silicon nitride with an MgO additive to the p-pha.se is thought to be a consequence of dissolution of the a phase in a magnesium silicate with subsequent recrystallization from the melt. Enhanced dissolution rate should then strongly influence a. p conversion [84B01]. Fig. 7.8. High temperature conversion of a-silicon nitride with an MgO additive to the p-pha.se is thought to be a consequence of dissolution of the a phase in a magnesium silicate with subsequent recrystallization from the melt. Enhanced dissolution rate should then strongly influence a. p conversion [84B01].
Fig. 7.9. Measurements of the degree of conversion of ct p silicon nitride at a fixed time and various temperatures are thought to show the strong influence of shock modification on the high temperature dissolution [84B01]. Fig. 7.9. Measurements of the degree of conversion of ct p silicon nitride at a fixed time and various temperatures are thought to show the strong influence of shock modification on the high temperature dissolution [84B01].
As a future alternative to glassed steel there is ceramics-coated steel which is resistant to abrasion, corrosion and high temperatures. The base metal is coated with silicon nitride formed in situ. Silicon nitride has resistance to both acid and alkali and it is durable at temperatures up to 1 000°C, suggesting a promising future coating in aggressive operating environments. [Pg.899]

Reactions (1), (2) and (3), which all use ammonia, have a tendency to deposit silicon nitride with a high ratio of included hydrogen, especially at the lower temperatures and if a plasma is used. This tendency is often detrimental but it can be remedied, at least to some degree, by using nitrogen instead of ammonia ... [Pg.282]

CVD plays an increasingly important part in the design and processing of advanced electronic conductors and insulators as well as related structures, such as diffusion barriers and high thermal-conductivity substrates (heat-sinks). In these areas, materials such as titanium nitride, silicon nitride, silicon oxide, diamond, and aluminum nitride are of particular importance. These compounds are all produced by CVD. 1 1 PI... [Pg.367]

Other ceramic cutting-tool materials include alumina, Si-Al-0-N, alumina-carbide composites and, more recently, a composite of silicon nitride reinforced with silicon carbide whiskers. This last material can be produced by chemical-vapor infiltration (CVI) and has high strength and toughness as shown in Table 18.3.Cl... [Pg.457]

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (SijN ), and boron nitride (BN) offer a wide variety of unique physical properties such as high hardness and high structural stability under environmental extremes, as well as varied electronic and optical properties. These advantageous properties provide the driving force for intense research efforts directed toward developing new practical applications for these materials. These efforts occur despite the considerable expense often associated with their initial preparation and subsequent transformation into finished products. [Pg.124]

Silicon carbide, SiC [1] and silicon nitride, Si3N4 [2], have been known for some time. Their properties, especially high thermal and chemical stability, hardness, high strength, and a variety of other properties have led to useful applications for both of these materials. [Pg.143]

Refractories such as boron nitride, silicon nitride, silicon carbide, and boron carbide are of great importance for the production or protection of systems which can be operated in very high... [Pg.392]

The introduction of small amounts of boron into precursors that produce silicon nitride have been known to improve the ceramic yields of silicon nitride and Si—B—C—N ceramics as first reported in 1986.110 Several reports have appeared in the past couple of years alone that utilize borazine precursors such as 2,4-diethylb-orazine and other cyclic boron precursors, such as pinacolborane, 1,3-dimethyl-1, 3-diaza-2-boracyclopentane, for their reactions with silanes, polysilazanes, and polysilylcarbodiimides for the high-yield production of Si—B—N—C ceramics.111... [Pg.53]

The spectrum of silicon based polymers is enriched by high tech ceramics like silicon nitride and carbide, respectively. These materials are produced by pyrolysis of appropriate polymeric precursors such as polysilanes, polycarbosilanes and polysilazanes (preceramics). These synthetic ceramics display a certain analogy to silicates, having SiC, SiN, or Si(C,N) as structural subunits instead ofSiO. [Pg.251]

The first LAPS utilized silicone nitride (S3N4) as a pH-sensitive layer [68], A light-addressable high resolution pH imaging sensor was applied to the detection of spatially resolved metabolic activity of Escherichia coli colonies on agar medium [69], For a silicone substrate thickness of 20 pm the reported spatial resolution was about 10 pm. The observed pH distribution was in good agreement with the results of simulation based on a two-dimensional diffusion model. [Pg.120]

Another problem is degradation of the sensor due to the high UV dose. The radiation resistance of most photodiodes decreases with wavelengths. UV-enhanced Si photodiodes show a loss of 10% in sensitivity already after an accumulated dose of some hundred J/cm2 at X = 254 nm. This is the dose a sensor will have received over the lifetime of an Hg lamp. Special silicon nitride-protected photodiodes are stable up to 105 J/cm2. A filter combined with an attenuator may help to achieve the required selectivity and reduce the exposure of the detector. However, the radiation stability of the filter has to be guaranteed. [Pg.174]

In the sintering of such materials as silicon nitride, a silica-rich liquid phase is formed which remains in the sintered body as an intra-granular glass, but this phase, while leading to consolidation, can also lead to a deterioration in the high-temperature mechanical properties. [Pg.301]


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