Heteroepitaxial

Heterocoagulation Heterocyclic Heterocyclic amines Heterocyclic azo dyes Heterocyclic compounds Heterocyclic dyes Heterocyclic polymers Heterocyclic thiophenes Heteroepitaxy Heterogeneous catalysis Heterogemte Heteroglycan Heterojunction... 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

The nature of the deposit and the rate of nucleation at the very beginning of the deposition are affected, among other factors, by the nature of the substrate. A specific case is that of epitaxy where the structure of the substrate essentially controls the structure of the deposit.Plb lP ] Epitaxy can be defined as the growth of a crystalline film on a crystalline substrate, with the substrate acting as a seed crystal. When both substrate and deposit are of the same material (for instance silicon on silicon) or when their crystalline structures (lattice parameters) are identical or close, the phenomena is known as homoepitaxy. When the lattice parameters are different, it is heteroepitaxy. Epitaxial growth cannot occur if these stmctural differences are too great. 

The lead compounds PbS, PbSe, PbTe are narrow-gap semiconductors that have been widely investigated for infrared detectors, diode lasers, and thermo-photovoltaic energy converters. Their photoconductive effect has been utilized in photoelectric cells, e.g., PbS in photographic exposure meters. Integrated photonic devices have been fabricated by their heteroepitaxial growth on Si or III-V semiconductors. 

Lu CY, Adams JA, Yu Q, Ohta T, Olmstead MA, Ohuchi FS (2008) Heteroepitaxial growth of the intrinsic vacancy semiconductor AQSes on Si(l 11) Initial structure and morphology. Phys Rev B 78 075321-075326... 

Lincot D, Mokili B, Cortes R, Froment M (1996) Heteroepitaxy of chemically deposited CdS on mismatched (111) GaP. Microsc Microanal Microstruct 7 217-224... 

Takahashi M, Todorobaru M, Wakita K, Uosaki K (2002) Heteroepitaxial growth of CdTe on a p-Si(lll) substrate by pulsed-light-assisted electrodeposition. Appl Phys Lett 80 2117-2119... 

Teichert, C. (2002) Self-organization of nanostructures in semiconductor heteroepitaxy Rhys. Rep. -Rev Sec. Phys. Lett., 365, 335-432. 

Schlapka A, Lischka M, GroB A, Kasberger U, Jakob P. 2003. Surface strain versus substrate interaction in heteroepitaxial metal layers Pt on Ru(OOOl). Phys Rev Lett 91 016101. 

Cl2Ga(N3)] air sensitive, sublimes at 70-100 °C in vacuum UHV-CVD Heteroepitaxial growth on Si and sapphire substrates at 650-700 °C, 1 1 films, no need for additional N source 293... 

Fundamental to forming high quality structures and devices with thin-films of compound semiconductors is the concept of epitaxy. The definition of epitaxy is variable, but focuses on the formation of single crystal films on single crystal substrates. Homoepitaxy is the formation of a compound on itself. Heteroepitaxy is the formation of a compound on a different compound or element, and is much more prevalent. 

MBE (molecular beam epitaxy), which involves epitaxial growth of thin films on either the same material as substrate (homoepitaxial) or a lattice-matched substrate (heteroepitaxial) the heated substrate reacts with a molecular beam of compounds containing the constituent elements of the semiconductor as well as any dopants the resultant film is essentially a single crystal slow growth rates produce films from a few nanometers thick to at most several hundred nanometers that have very high purity and controlled levels of dopants. 

Epitaxial thin films, 24 742 Epitaxy, 22 152, 185. See also Epitaxial growth Heteroepitaxy in FET fabrication, 22 163-164 in HBT fabrication, 22 166, 167 in RTD fabrication, 22 170 silicon purification via, 22 496 197 vitreous silica in, 22 442 Epitaxy crystallization, ion-beam-induced, 14 447-448... 

Heterocyclic sulfides, 23 645 Heteroepitaxial layers, for compound semiconductors, 22 145 Heteroepitaxy, on lattice mismatched substrates, 22 160 Heterofullerenes, 12 231—232 chemistry of, 12 252—253 Heterogeneous azeotropic distillation, 8 819-845... 

Similarly, the defect structure associated with surface-reconstruction phenomena is known to exert an influence on heteroepitaxial deposition. This has been demonstrated for both lead and nickel deposition on reconstructed Au(lll) [353,360,451]. For nickel deposition, nucleation was observed to proceed in three distinct, potential-dependent steps [354,451]. At... 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

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