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Heteroepitaxial Growth on cBN, Ni, and Other Substrates

In this chapter, heteroepitaxial growth of diamond particles and films on cubic boron nitride (cBN), Ni, Co, Cu, TiC, BeO, NijSi, graphite, sapphire, and Si will be described. The crystal parameters of these and other materials are listed in Appendix E. [Pg.91]

See other pages where Heteroepitaxial Growth on cBN, Ni, and Other Substrates is mentioned: [Pg.89] [Pg.91] [Pg.93] [Pg.95] [Pg.97] [Pg.99] [Pg.101] [Pg.103] [Pg.105] [Pg.107] [Pg.109] [Pg.111] [Pg.113] [Pg.115] [Pg.117] [Pg.89] [Pg.91] [Pg.93] [Pg.95] [Pg.97] [Pg.99] [Pg.101] [Pg.103] [Pg.105] [Pg.107] [Pg.109] [Pg.111] [Pg.113] [Pg.115] [Pg.117]

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Growth substrates

Heteroepitaxial

Heteroepitaxial growth

Ni substrate

Other Substrates