Heteroepitaxial system

For the system Si/Si(0 01) the B configuration is the lowest in energy followed by A and C, whereas for the system Ge/Ge(00 1) C is energetically the most favorable adsorption site followed by B. In the case of the heteroepitaxial systems is not straightforward to extract which dimer adsorption site is energetically the most favorable. The main reason for this is that intermixing of atoms originating from the ad-dimer and the substrate can occur, even at temperatures as low as room temperature. 

In Tables 6-8 we have listed the submonolayer and monolayer stractures of metals on the principal low index surfaces of metal substrates from 2- to 4-fold rotational symmetry. This compilation comprises heteroepitaxial systems only since the structure of homoepitaxial systerrrs is in most cases trivial. For umeconstructed surfaces the bulk stacking is pseudomorphically continued and for reconstructed ones the reconstruction is lifted below the adlayer and at the same time taken on by the adsorbate layer. Only few homoepitaxial cases are worth mentioning since their reconstructions can metastably be lifted, as seen for Au/Au(110)-(lx2) [97Giin], or a reconstruction can be induced at a lower tenqreratrrre by homoepitaxial adsorption, as seen for Pt/Pt( 111) [93Bot]. 

M. A. Olmstead, Thin Films Heteroepitaxial Systems, World Scientific, Singapore (1999). 

Coupling Atomistic and Continuum Length Scales in Heteroepitaxial Systems Multiscale Molecular-Dynamics/Finite-Element Simulations of Strain Relaxation in Si/Si3N4 Nanopixels. 

Following adsorbate diffusion on surfaces, the use of fast STM [43] became possible even in real time and now allows surface scientists to draw a detailed picture of adsorbate kinetics, hopping rates, and diffusion energy barriers [44, 45] as well as to explore nucleation and growth of various homoepitaxial and heteroepitaxial systems [46]. Even the dynamics of surface reactions under high pressures [47,... 

Ventrice, C.A., Jr. and Geisler, H. (1999). The growth and structure of epitaxial metal-oxide/metal interfaces, in Thin Films Heteroepitaxial Systems, ed. W.K. Liu, M.B. Santos, Singapore World Scientific, pp. 167-210. 

Diffusion from the surface layer to the crystal bulk plays an important role in heterophase systems. It is the diffusion processes that determine in large part whether or not ZnO layers will grow and whether the ZnO/ZnSe(S,Te) heterojunction will have a sharp interface or the ZnO layer will grow via oxygen diffusion into the crystal bulk and will have a broad boundary. Solving Eqs. (8-11), one can determine, from the relationship between the generation rates of A and B vacancies, the quasi-heteroepitaxy parameters at which particular kinds of heterojunctions, conductivity types, and defect concentrations in ZnO and ZnSe(S, Te) layers can be obtained. 

Erands AJ, Koritnik AJ, Gellman A, Salvador PA (2007) Chiral surfaces and metal/ceramic heteroepitaxy in the Pt/SrTi03(621) system. Surf Sci 601 1930... 

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