Preparation of Special Forms Textured and Heteroepitaxial Films

3 Preparation of Special Forms Textured and Heteroepitaxial Films 

Two methods will be presented here allowing the preparation of films in which the crystallites have lost two and three degrees of freedom. By an appropriate control of the growth process, diamond films with fiber texture can be fabricated, in which 

The concentration of molecular nitrogen in the source gas was recognized as a very important third parameter determining the growth morphology and texture Small amounts (lO-lOOp.p.m.) of nitrogen were found to improve the crystalline perfection and favor the formation of smooth 001 [-faceted (001 [-textured films considerably [22]. An analysis of HF-CVD homoepitaxial film growth rates 

The bias-induction of diamond nucleation had already been reported by Yugo et al. in 1991 [41], and thoroughly studied also by Stoner et al. [42]. However, they found no evidence of the formation of heteroepitaxially oriented nuclei, due to the selection of experimental parameters in their studies. 

Using a commercial MW-PCVD reactor equipped with a substrate bias, nucleation and growth of epitaxially orientated diamond films can be achieved on silicon substrates by applying a three-step procedure consisting typically of  

---