Gallium zinc oxide films

Pauporte T. and Lincot D. (1999), Heteroepitaxial electrodeposition of zinc oxide films on gallium nitride , Appl. Phys. Lett. 75, 3817-3819. 

J. Hu and R.G. Gordon, Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium, J. Appl. Phys., 72 5381-5392, 1992. 

Kang HS, Lee JK, Lee JW, Joo J, Ko JM, Kim MS, Lee JY (2005) Humidity dependent characteristics of thin film poly(3,4-ethylenedioxythiophene) field-effect transistor. Synth Met 155 176-179 Kang D, Lim H, Kim C, Song I (2007) Amorphous gallium indium zinc oxide thin film transistors sensitive to oxygen molecules. Appl Phys Lett 90 192101... 

New developments relating to the manufacture of thin film transistors (TFT) are being reported from Japan where the Tokyo Institute of Technology has developed a flexible, transparent device on a PETP substrate. This TFT comprises an amorphous oxide semiconductor, which serves as the active layer, and which is made from indium, gallium and zinc oxide deposited by laser ablation to a thickness of 30-60 nm. The TFT, with its transparent electrodes and circuitry, is manufactured in a vacuum at a temperature of 150 "C or less. Because of this low processing temperature it is possible to use low cost PET film, with a thickness of 200 pm, as a substrate thereby enabling transistors to be manufactured at a relatively low cost. 

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