Gallium films

Tyszczuk K, Korolczuk M, Grabarczyk M (2007) Application of gallium film electrode for elimination of copper interferences in anodic stripping voltammetry of zinc. Talanta 71 2098-2101... 

Cachet H, Cortes R, Froment M, Mamin G (1999) Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide. Philos Mag Lett 79/10 837-840 Muthuvel M, Stickney JL (2006) CdTe Electrodeposition on InP(lOO) via Electrochemical Atomic Layer Epitaxy (EC-ALE) Studies Using UHV-EC. Langmuir 22 5504-5508 Streltsov EA, Osipovich NP, Ivashkevich LS, Lyakhov AS (1999) Effect of Cd(ll) on electrodeposition of textured PbSe. Electrochim Acta 44 2645-2652 Beaunier L, Cachet H, Cortes R, Froment M (2000) Electrodeposition of PbSe epitaxial films on (111) InP. Electrochem Commun 2 508-510... 

Recendy, ID quantum dots of gallium selenide with average diameter 8-10 nm, connected in the form of chains of average length 50-60 nm, were synthesized on rro substrates by cathodic electrodeposition from acidic aqueous solutions of gallium(III) nitrate and selenious acid [186], The structural analysis from XRD patterns revealed the formation of Ga2Se3/GaSe composition. The films were found to be photoactive in aqueous sodium thiosulfate solution and showed p-type conductivity. 

Preliminary studies on the dimeric complex [But(H)Ga(/i-NEt2)]2, prepared by the addition of four equivalents of B Li to the gallium chloride complex [Cl2Ga(/i-NEt2)]2, proved to be air stable and produced gallium-rich GaN films at deposition temperatures as low as 250 °C using CVD. However, it was necessary to add an external nitrogen source in order to obtain 1 1 GaN films.279... 

The monothiocarbamato complexes [In(SOCNEt2)3],323 [In(SOCN Pr2)3],303 and [Ga(SOC-NEt2)3]304 have been used as MOCVD precursors (Figure 42). The films grown from both of the indium precursors were found to be of (3-In2S3 and, with the diisopropyl compound, deposition occurred at temperatures as low as 300 °C. The gallium monothiocarbamato precursor in contrast deposited films of cubic GaS at 450 °C (comparable to those obtained from... 

The covalent nature of III-V materials causes problems for preparation of highly crystalline nanoparticles and thin films. A single-molecular precursor approach was employed to produce III-V nanoparticles of InP and GaP using the indium/gallium diorganophosphide compounds... 

Gallane stibine adducts, 240, 241-242 Gallium compounds, 294-296 see also Gallanes GaN GaSb GaN films, precursors for, 257-258 GaSb films, 298, 299, 303-306 Geometric parameters... 

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