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Charge free

In the absence of free charges and current densities, we have in cgs units ... [Pg.1271]

An important characteristic of plasma is that the free charges move in response to an electric field or charge, so as to neutralize or decrease its effect. Reduced to its smaUest components, the plasma electrons shield positive ionic charges from the rest of the plasma. The Debye length, given by the foUowing ... [Pg.107]

A clear distinction between electrophoresis (field acdion on an object carrying excess free charges) and dielectrophoresis (field gradient acdion on neutral objects) must be borne in mind at all times. [Pg.2012]

An example of a practical dielec trofilter which uses both of the features described, namely, sharp electrodes and dielectric field-warping filler materials, is that described in Fig. 22-34 [H. I. Hall and R. F. Brown, Lubric. Eng., 22, 488 (1966)]) It is intended for use with hydrauhc fluids, fuel oils, lubricating oils, transformer oils, lubricants, and various refineiy streams. Performance data are cited in Fig. 22-35. It must be remarked that in the opinion of Hall and Brown the action of the dielec trofilter was electrostatic and due to free charge on the particles dispersed in the hquids. It is the present authors opinion, however, that both elec trophoresis and dielectrophoresis are operative here but that the dominant mechanism is that of DEP, in wdiich neutral particles are polarized and attracted to the regions of highest field intensity. [Pg.2013]

In the absence of free charge in the disk, the electric displacement will be independent of position, although it will vary with time D = [D(t),0,0]. The current induced in the external circuit is attributable to changes in electric displacement within the disk and is given by... [Pg.74]

The redistribution of charges leading to Eq. (1) involves both free charges and dipolar layers. Therefore can be split into two... [Pg.2]

In the case of ionic adsorbates, the variation in WS50is normally unable to provide a clue to the molecular structure of the solvent since free charge contributions outweigh dipolar effects. In this case UHV experiments are able to give a much better resolved molecular picture of the situation. The interface is synthesized by adsorbing ions first and solvent molecules afterward. The variation of work function thus provides evidence for the effect of the two components separately and it is possible to see the different orientation of water molecules around an adsorbed ion.58,86,87 Examples are provided in Fig. 6. [Pg.25]

Since Bis via Gauss s Law of electrodynamics proportional to the local excess free charge it follows that the term fjeV VGj is proportional to the net charge stored in the metal in region G. This net charge, however, was shown above to be zero, due to the electroneutrality of the backspillover-formed effective double layer at the metal/gas interface and thus Dfje w.Gj must also vanish. Consequently Eq. (5.47) takes the same form with Eq. (5.19) where, now, O stands for the average surface work function. The same holds for Eq. (5.18). [Pg.222]

Usually gf (ion) i=Af P and gf (dip) fA X-It appears that under accessible experimental conditions there is little or no dependence of % on P. i-o., the surface potential is independent of the free charge of the phase,but... [Pg.15]

By the nature of conduction and values of conductivity, materials can be classified as conductors, semiconductors, or insulators (dielectrics). It is a special attribute of conductors that free electric charges are present in them. The migration of these free charges in an applied electric field manifests itself as electric current. [Pg.6]

Real charge is always associated with well-defined physical carriers such as electrons and ions this is not so for the idealized physical charge considered in electrostatics. Each conductor can be characterized by stating the nature and concentration of the free charges. In the present section we consider free charged particles of atomic (or molecular) size, not larger, aggregated entities, such as colloidal particles. [Pg.6]

More complex phenomena occur when current crosses interfaces between semiconductors. The most typical example is the rectification produced at interfaces between p- and n-type semiconductors. Electric current freely flows from the former into the latter semiconductor, but an electric field repelling the free carriers from the junction arises when the attempt is made to pass current in the opposite direction Holes are sent back into the p-phase, and electrons are sent back into the n-phase. As a result, the layers adjoining the interface are depleted of free charges, their conductivities drop drastically, and current flow ceases ( blocking the interface). [Pg.13]

Conductor-insulator and conductor-vacuum interfaces lack a continuous exchange of free charges, and there is no electrochemical equilibrium. For this reason the work that is performed in transferring charged particles from one phase to the other is not zero. The total work, X, which must be performed by the external forces in transferring (extracting) an electron from a metal (M) into vacuum (0) is called the electron work function (or simply the work function). The work function for all metals is always positive, since otherwise the electrons would leave the conductor spontaneously. [Pg.140]

Insulators lack free charges (mobile electrons or ions). At interfaces with electrolyte solutions, steady-state electrochemical reactions involving charge transfer across the interface cannot occur. It would seem, for this reason, that there is no basis at this interface for the development of interfacial potentials. [Pg.598]

The term l/Cjo corresponds to the rearrangement of free charge due to the charging of the interface and can be estimated from a suitable theory (e.g., Gouy-Chapman). The term 1/C , is due to a contribution from electronic rearrangement at the surface of the metal. It occurs because the center of mass of the charge induced on the metal lies in front of the ideal metal edge. Finally, the term 1/Qjp is a contribution from the... [Pg.671]


See other pages where Charge free is mentioned: [Pg.589]    [Pg.589]    [Pg.589]    [Pg.420]    [Pg.468]    [Pg.2012]    [Pg.2012]    [Pg.95]    [Pg.443]    [Pg.85]    [Pg.100]    [Pg.29]    [Pg.97]    [Pg.154]    [Pg.470]    [Pg.78]    [Pg.413]    [Pg.2]    [Pg.4]    [Pg.5]    [Pg.10]    [Pg.25]    [Pg.112]    [Pg.439]    [Pg.639]    [Pg.222]    [Pg.180]    [Pg.519]    [Pg.99]    [Pg.99]    [Pg.340]    [Pg.165]    [Pg.8]    [Pg.108]   
See also in sourсe #XX -- [ Pg.3 ]

See also in sourсe #XX -- [ Pg.9 ]




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Adsorption free energy, charge transfer processes

Charge Distribution Costs Free Energy

Charge mean free path

Charge shift reactions, free-energy change

Charge transfer free energy surfaces

Charged interface, free energy

Charged interface, free energy formation

Charged surface, free energy

Charged surface, free energy formation

Charging constant resistance-free voltage

Charging free energy

Charging free energy continuum solvation models

Charging free energy contributions

Effective Bond Charges from Rotation-Free Atomic Polar Tensors

Excitons and free charges

Free Charge Carrier Mobility

Free charge injection

Free charge transfer

Free energy charge

Free energy charging formula

Free energy of a charged surface

Free energy of charging

Free particle charge-dipole interaction

Free radicals charged

Free-charge-carriers

Mobility of free charges

Quantum chemical calculations charging free energy contributions

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