Active electronic devices

Many active electronic devices can be operated at cryogenic temperatures [45], They are generally of the field-effect transistor (FET) type and are based on silicon (working down to 100K) or gallium arsenide (working even below 4K). 

Thin organic films are the subject of a great deal of research, motivated by their potential application in micro-electronics. Existing applications, such as in the photo-lithographic production of silicon micro-circuits, involve relatively disordered films. However, higher degrees of order and the use of more complex molecules could lead to systems in which the organic molecules themselves become the active electronic devices. 

Valve Metal, Si and Ceramic Oxides as Dielectric Films for Passive and Active Electronic Devices... 

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