Fabrication of diamonds

M. Ohyanagi, T. Yoshikawa, M. Koizumi, S. Hosomi, E. A. Levashov, and I. P. Borovin-skaya, Fabrication of diamond-dispersed cermets by SHS/dynamic pseudo isostatic compaction (DPIC), Int. J. SHS, 1995, 4, 387 394. 

Liang G, Zhu X, Xu Y, Li J, Yang S (2010) Holographic design and fabrication of diamond symmetry photonic crystals via dual-beam quadruple exposure. Adv Mater (Weinheim) 22(40) 4524-4529. doi 10.1002/adma.201001785... 

Fabrication of diamonds using explosives is a dynamic synthesis method. It began to be used in the past 15-20 years. The sources of carbon for the diamond phase are (i) nonexplosive carbon materials or (ii) carbon-containing explosives. 

The shaping of these fine, submicrometer powders into complex components and their subsequent consoHdation into dense ceramic parts of ideally zero porosity is a major technological challenge. The parts formed need to be consoHdated to near-net shape because Si N machining requires expensive diamond grinding. Additionally, Si N dissociates at or near the typical densiftcation temperatures used in the fabrication of stmctural ceramics and, therefore, special measures have to be taken to preserve the compositional integrity of the material. 

Other Industrial Applications. High pressures are used industrially for many other specialized appHcations. Apart from mechanical uses in which hydrauhc pressure is used to supply power or to generate Hquid jets for mining minerals or cutting metal sheets and fabrics, most of these other operations are batch processes. Eor example, metallurgical appHcations include isostatic compaction, hot isostatic compaction (HIP), and the hydrostatic extmsion of metals. Other appHcations such as the hydrothermal synthesis of quartz (see Silica, synthetic quartz crystals), or the synthesis of industrial diamonds involve changing the phase of a substance under pressure. In the case of the synthesis of diamonds, conditions of 6 GPa (870,000 psi) and 1500°C are used (see Carbon, diamond, synthetic). 

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. 

The whole history of these books [the Gospels] is so defective and doubtful that it seems vain to attempt minute inquiry into it and such tricks have been played with their text.. that we have a right, from that cause, to entertain much doubt what parts of them are genuine. In the New Testament there is internal evidence that parts of it have proceeded from an extraordinary man and that other parts are of the fabric of very inferior minds. It is as easy to separate those parts, as to pick out diamonds from dunghills. ... 

Dense composites of cemented carbide containing SiC-coated diamond particles can be fabricated without conversion of diamond to graphite. The fracture toughness of the composite is double that of cemented carbide due to the deflection and blocking effects against crack propagation by the dispersed diamond particles. 

Miyamoto, Y., Kashiwagi, T., Hirota, K., Yamaguchi, O., Moriguchi, H. Tsuduki, K., Ikegaya, A., (2003), Fabrication of new cemented carbide containing diamond coated with nanometer-sized SiC particles , J. Am. Ceram. Soc., 86, 73-76. 

Preliminary results were recently reported [145] on the use of CdTe electrodeposition on diamond in the fabrication of a solid-state solar cell based on the boron-doped p-type diamond/n-type CdTe junction. In this cell, the wide-bandgap diamond is an optical window that generates photovoltage, whereas the narrow-bandgap CdTe generates photocurrent. We note that no appropriate p-type material for the fabrication of optical windows has existed so far therefore, one would use an n-type CdS window coupled with narrow-bandgap p-type CdTe. However, the pro-... 

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