P-type diamond

Preliminary results were recently reported [145] on the use of CdTe electrodeposition on diamond in the fabrication of a solid-state solar cell based on the boron-doped p-type diamond/n-type CdTe junction. In this cell, the wide-bandgap diamond is an optical window that generates photovoltage, whereas the narrow-bandgap CdTe generates photocurrent. We note that no appropriate p-type material for the fabrication of optical windows has existed so far therefore, one would use an n-type CdS window coupled with narrow-bandgap p-type CdTe. However, the pro-... 

Diamondlike Carbon and Hard Carbon-Based Sensors Sensors that are based upon diamond technology include thermistors, pressure and flow sensors, radiation detectors, and surface acoustic wave devices [103]. The relative ease of depositing prepattemed, dielectrically isolated insulating and. semiconducting (boron-doped p type) diamond films has made polycrystalline diamond-based sensors low-cost alternatives to those based on conventional semiconductors. Diamondlike carbon and diamond films synthesized by chemical... 

B-doped p-type diamond films are known to exhibit piezoresistivity. Namely, the resistance increases under compressive stress [418]. The piezoresistivity is expressed by the gauge factor K, which is defined by ... 

Boron is an acceptor in diamond with an activation energy of 0.37 eV. Natural type II b diamond is an example of a boron doped p-type diamond. There are many commercial sources of synthetic boron doped-diamond. Polycrystalline boron doped diamond films, made by CVD, have been made for electrode applications. High-pressure high-temperature diamonds with boron doping are also available. ... 

Fig. 5.2-62 Debye length as a function of carrier concentration for Si, Ge and p-type diamond...

Transistors of diamond have been investigated mainly with the p-channel MBS type and p-channel MOS type, because the only reproducible channels are available for B-doped p-type diamond. However, from a historical viewpoint, research activities on MESFETs and MOSFETs were preceded by several pioneering studies with other device structures. 

The first work that utilized a bipolar transistor was that of Prins (52). Using a natural p-type diamond bulk crystal as a substrate, carbon ions are ion implanted to form n-type-like regions with 3.2-pm-diameter wire as a implant mask. The energy level and mechanism of the carbon implantation cannot be estimated however, bipolar transistor behavior was achieved. The I-V characteristics are shown in Fig. 9. Although the current gain of ftp = Ic/h is only 0.11, the impact on researchers in this field was not insignificant. This was followed by several research activities, such as work on npn bipolar transistors with As implanted n-type-like regions and a point contact bipolar-like transistor (53). 

As shown in a previous subsection, it is possible to grow diamond epitaxially on cBN with a lattice mismatch of 1.3% (47). Utilizing this growth, a heterojunction of p-type diamond-n-... 

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