Fabric-based capacitors

A fabric-based capacitor was made using a novel 3D-weaving technique [56]. As shown in Fig. 28.30, the multilayer woven stmcture is made of live layers the conductive layers (A and D), the insulating and stabilizing layers (B and E), and the middle layer (C), which acts as the distancing and insulating layer. 

The material properties of PS offer new ways of making electronic devices. For the manufacture of cold cathodes, for example, oxidized microporous polysilicon has been found to be a promising material. The application of basic semiconductor processing steps such as doping, oxidation and CVD to a macroporous material enable us to fabricate silicon-based capacitors of high specific capacitance. Both devices will be discussed below. 

The entire generator is monnted on a single fabricated base that supports the pedestals, the inner and outer frames, and the brush rigging or the exciter. The base contains piping for oil supplies, conduit for wiring, and a number of components associated with the main leads, such as hghtning arresters and surge capacitors. The structural vibration of the base must be well away from any frequency of concern. 

Pd MOS STRUCTURES The Pd MOS device (capacitor and field effect transistor) has been extensively studied as a model chemical sensor system and as a practical element for the detection of hydrogen molecules in a gas. There have been two outstanding reviews of the status of the Pd MOS sensor with primary emphasis on the reactions at the surface (7,8). In this section, the use of the device as a model chemical sensor will be emphasized. As will be seen, the results are applicable not only to the Pd based devices, they also shed light on the operation of chemfet type systems as well. Because of its simplicity and the control that can be exercised in its fabrication, the discussion will focus on the study of the Pd-MOSCAP structure exclusively. The insights gained from these studies are immediately applicable to the more useful Pd-MOSFET. 

Functional fibres, filaments and yams are the basic building blocks of electrotextiles. The textile industry has demonstrated a remarkable capability to incorporate both natural and man-made filaments into yarns and fabrics to satisfy a wide range of physical parameters which survive the manufacturing process and are tailored to specific application environments. Electronic components can be fabricated within and/or on the surface of filaments and can subsequently be processed into functional yams and woven into fabrics. Passive components such as resistors, capacitors and inductors can be fabricated in several different manners. Diodes and transistors can be made on long, thin, flat strands of silicon or formed in a coaxial way. Progress has been made in the development of fibre batteries and fibre-based solar cells. In addition, a variety of actuated materials (piezoelectric, etc.) can be made into multiple long strands (filaments) and subsequently be woven into fabric. 

Ion conducting polymers may be preferable in these devices electrolytes because of their flexibility, moldability, easy fabrication and chemical stability (for the same reasons that they have been applied to lithium secondary batteries [19,48,49]). The gel electrolyte systems, which consist of a polymeric matrix, organic solvent (plasticizer) and supporting electrolyte, show high ionic conductivity about 10 5 S cnr1 at ambient temperature and have sufficient mechanical strength [5,7,50,51], Therefore, the gel electrolyte systems are superior to solid polymer electrolytes and organic solvent-based electrolytes as batteries and capacitor materials for ambient temperature operation. 

Michaelis reviews the application of valve metals in electronics based on the dielectric properties of ultra-thin films. Following presentation of fundamental principles and experimental details, the discussion of valve metal systems includes thin film oxide behavior of Ti, Zr, Hf, Nb, Ta, and Al. The application of these valve metal systems in electrolytic capacitor manufacturing is discussed with emphasis on current development trends and research issues. In addition, special emphasis on Si02 dielectric films is provided for integrated circuit applications associated with dynamic random access memory chip fabrication. 

Zeolite membranes and films have been employed to modify the surface of conventional chemical electrodes, or to conform different types of zeolite-based physical sensors [49]. In quartz crystal microbalances, zeolites are used to sense ethanol, NO, SO2 and water. Cantilever-based sensors can also be fabricated with zeolites as humidity sensors. The modification of the dielectric constant of zeolites by gas adsorption is also used in zeolite-coated interdigitaled capacitors for sensing n-butane, NH3, NO and CO. Finally, zeolite films can be used as barriers (for ethanol, alkanes,...) for increasing the selectivity of both semiconductor gas sensors (e.g. to CO, NO2, H2) and optical chemical sensors. 

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