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Conduction-band electrons

The primary photochemical act, subsequent to near-uv light (wavelengths <400 nm) absorption by Ti02 particles, is generation of electron—hole pairs where the separation (eq. 3) into conduction band electrons (e g ) and valence band holes (/lyB ) faciUtated by the electric field gradient in the space charge region. Chemically, the hole associated with valence band levels is constrained at... [Pg.403]

Electrons excited into the conduction band tend to stay in the conduction band, returning only slowly to the valence band. The corresponding missing electrons in the valence band are called holes. Holes tend to remain in the valence band. The conduction band electrons can estabUsh an equihbrium at a defined chemical potential, and electrons in the valence band can have an equiUbrium at a second, different chemical potential. Chemical potential can be regarded as a sort of available voltage from that subsystem. Instead of having one single chemical potential, ie, a Fermi level, for all the electrons in the material, the possibiUty exists for two separate quasi-Fermi levels in the same crystal. [Pg.116]

Cathodoluminescence, CL, involves emission in the UV and visible region and as such is not element specific, since the valence/conduction band electrons are involved in the process. It is therefore sensitive to electronic structure effects and is sensitive to defects, dopants, etc., in electronic materials. Its major use is to map out such regions spatially, using a photomultiplier to detect all emitted light without... [Pg.118]

Taking into account that neutralization means tunneling of a target conduction-band electron to the ion, the time integral can easily be replaced by integration over the distance from the surface, s, by use of the identity dt = ds/v , where Vj is the component of the ion velocity perpendicular to the surface. Prom this, the velocity-dependence of the survival probability, P , is obtained ... [Pg.151]

We see that the shortcomings of the quasi-chemical theory for dilute solutions also lead to the idea that the interaction between two atoms in solution may be very different from the interaction between the same atoms in the pure state. This is a point of view that can be reached from a consideration of the screening11 by localized or by conduction-band electrons that must occur about... [Pg.139]

The deposition takes place from HTeOs and cadmium-EDTA complex solutions at a potential whereat, whilst Te is deposited from HTeOs under a diffusion-limited condition, the Cd-EDTA complex ion is not reduced to metallic Cd. The first step is the dark deposition of one monolayer of elemental Te on the p-Si substrate (Fig. 4.11a, i). After completion of this step, as specified by measuring the charge passed, the electrode is illuminated by light with energy higher than the band gap energy of silicon for a limited time. Then conduction band electrons are... [Pg.181]

CESR Conduction band electron spin resonance... [Pg.117]

In the case of anatase allotropic form of titania, the redox potential for the photogenerated holes vs. the standard hydrogen electrode is of +3.1 V, and that for the conduction band electrons of +0.5 V (Figure 12.2). These values show that holes created by light excitation have a strong oxidizing potential. [Pg.431]

The conduction band electron of liquid water, which cotild be produced by photoelectron emission fi m metal electrodes, is very unstable with its lifetime being 10 seconds it is readily captured by water molecules to form a hydrated electron. The hydrated electron is also very unstable being rapidly absorbed in electron scavenger particles such as H3O, NO 2 and O2. The level of the hydrated electron has been estimated at 0.3 to 0.5 eV below the conduction band edge [Battisi-Trasatti, 1977 Watanabe-Gerischer, 1981]. [Pg.46]

Figures 8-16 and 8-17 show the state density ZXe) and the exchange reaction current io( ) as functions of electron energy level in two different cases of the transfer reaction of redox electrons in equilibrium. In one case in which the Fermi level of redox electrons cnxEDax) is close to the conduction band edge (Fig. 8-16), the conduction band mechanism predominates over the valence band mechanism in reaction equilibrium because the Fermi level of electrode ensa (= nREDOK)) at the interface, which is also dose to the conduction band edge, generates a higher concentration of interfadal electrons in the conduction band than interfadal holes in the valence band. In the other case in which the Fermi level of redox electrons is dose to the valence band edge (Fig. 8-17), the valence band mechanism predominates over the conduction band mechanism because the valence band holes cue much more concentrated than the conduction band electrons at the electrode interface. Figures 8-16 and 8-17 show the state density ZXe) and the exchange reaction current io( ) as functions of electron energy level in two different cases of the transfer reaction of redox electrons in equilibrium. In one case in which the Fermi level of redox electrons cnxEDax) is close to the conduction band edge (Fig. 8-16), the conduction band mechanism predominates over the valence band mechanism in reaction equilibrium because the Fermi level of electrode ensa (= nREDOK)) at the interface, which is also dose to the conduction band edge, generates a higher concentration of interfadal electrons in the conduction band than interfadal holes in the valence band. In the other case in which the Fermi level of redox electrons is dose to the valence band edge (Fig. 8-17), the valence band mechanism predominates over the conduction band mechanism because the valence band holes cue much more concentrated than the conduction band electrons at the electrode interface.
We again consider a transfer of redox electrons via the conduction band medi-anism as shown in Fig. 8-23. The anodic and cathodic transfer currents of redox electrons have been given in Eqns. 8-56 and 8-57, respectively. In these equations, the state density occupied by electrons in the conduction band is approximated by the concentration of conduction band electrons at the electrode interface, n, = j Dsc(E)A(E-eF(8C))dE and the state density vacant for electrons in the conduction band is approximated by the effective state density of the conduction band, Nc Nc n, j Dsd ) 1-f(e-ef ac ) de. Further, the state density of... [Pg.262]

Inhibition of H2 formation can be seen when the anode-volume is saturated with O2 application of an external bias up to 0.7 V can usually prevent this effect, increased yield of H2 when Pt is present as a cathode has been rationalized in terms of three factors (a) the removal of conduction band electron from Ti02 to Pt [equation (4.4.14)], (b) The ease of reactions (4.4.15) and (4.4.16) because of a low overpotential for H2 evolution from water at the Pt cathode, and (c) H atom migration to the Pt cathode. [Pg.201]

For hydrogen production on the photocatalyst with the more negative conduction band, Tcan scavage holes [reaction (6.5.8)] thus conduction band electrons are available to reduce protons to H2... [Pg.392]

The conduction band electrons of Cd8 move to Ft that in turns reduces MV. The reduced methyl viologen in turn reduces a hydrogen ion to a hydrogen molecule. The valence band boles of WO3 then oxidize water to O2 molecules. [Pg.456]

Primary energy loss pathways include radiative and non-radiative deactivation of the dye sensitizer (Process 6), recombination of the conduction band electrons by the oxidized sensitzer (Process 7), or recombination of the conduction band electrons by the the oxidized form of the redox system (Process 8). [Pg.497]

Fig. 96. Schematic illustration of a colloidal semiconductor. Band-gap excitation promotes electrons from the valence band (VB) to the conduction band (CB). In the absence of electron donors and/or acceptors of appropriate potential at the semiconductor surface or close to it, most of the charge-separated, conduction-band electrons (e CB) and valence-band holes (h+VB) non-pro-ductively recombine. Notice the band bending at the semiconductor interface [500]... Fig. 96. Schematic illustration of a colloidal semiconductor. Band-gap excitation promotes electrons from the valence band (VB) to the conduction band (CB). In the absence of electron donors and/or acceptors of appropriate potential at the semiconductor surface or close to it, most of the charge-separated, conduction-band electrons (e CB) and valence-band holes (h+VB) non-pro-ductively recombine. Notice the band bending at the semiconductor interface [500]...
Conduction-band electron transfer to Rh and methyl- 631 viologen was examined... [Pg.239]


See other pages where Conduction-band electrons is mentioned: [Pg.2397]    [Pg.2416]    [Pg.448]    [Pg.358]    [Pg.428]    [Pg.514]    [Pg.250]    [Pg.153]    [Pg.261]    [Pg.263]    [Pg.137]    [Pg.153]    [Pg.161]    [Pg.749]    [Pg.122]    [Pg.254]    [Pg.35]    [Pg.139]    [Pg.440]    [Pg.310]    [Pg.134]    [Pg.287]    [Pg.299]    [Pg.126]    [Pg.222]    [Pg.548]    [Pg.241]    [Pg.389]    [Pg.401]    [Pg.403]    [Pg.436]    [Pg.110]    [Pg.355]    [Pg.152]   
See also in sourсe #XX -- [ Pg.38 ]




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Conductance electronic

Conducting electrons

Conduction band

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Conductivity: electronic

Electron conductance

Electron conductivity

Electronic conduction

Electronic conductivity perovskite band structure

Electronic states conduction band

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Electronics conduction

Electrons in the conduction band of a crystal

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