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Crystals growth from melt

The crystal growth of metal borides by gas-phase methods permits preparation of products at moderate T (1000-1500°C). This is an important advantage since most borides melt at high T (ca. 3000°C), which makes their crystal growth from melts difficult. In addition, the gas-phase methods lead to the formation of single crystals and solid films of incongruently melting borides. [Pg.275]

BN Roy. Crystal Growth from Melts. New York Wiley, 1992. [Pg.40]

Figure 3.6 Methods for crystal growth from melt (a) Czochralski method (b) Kyropoulos method (c) Bridgman-Stockbarger method and (d) Vemeuil method. Figure 3.6 Methods for crystal growth from melt (a) Czochralski method (b) Kyropoulos method (c) Bridgman-Stockbarger method and (d) Vemeuil method.
Crystal Growth from Melts and Solutions 17.2.4.1. Growth from Melts 17.2.4.1.2. Directional Solidification. [Pg.109]

See other pages where Crystals growth from melt is mentioned: [Pg.101]    [Pg.102]    [Pg.102]    [Pg.103]    [Pg.104]    [Pg.105]    [Pg.106]    [Pg.107]    [Pg.108]    [Pg.130]    [Pg.130]    [Pg.131]    [Pg.132]    [Pg.136]    [Pg.137]    [Pg.138]    [Pg.144]    [Pg.145]    [Pg.146]    [Pg.147]    [Pg.150]   
See also in sourсe #XX -- [ Pg.101 ]

See also in sourсe #XX -- [ Pg.598 ]



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