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Electronic photoluminescence

Turning to non-metallic catalysts, photoluminescence studies of alkaline-earth oxides in dre near-ultra-violet region show excitation of electrons corresponding to duee types of surface sites for the oxide ions which dominate the surface sUmcture. These sites can be described as having different cation co-ordination, which is normally six in the bulk, depending on the surface location. Ions on a flat surface have a co-ordination number of 5 (denoted 5c), those on the edges 4 (4c), and dre kiirk sites have co-ordination number 3 (3c). The latter can be expected to have higher chemical reactivity than 4c and 5c sites, as was postulated for dre evaporation mechanism. [Pg.124]

In photoluminescence one measures physical and chemical properties of materials by using photons to induce excited electronic states in the material system and analyzing the optical emission as these states relax. Typically, light is directed onto the sample for excitation, and the emitted luminescence is collected by a lens and passed through an optical spectrometer onto a photodetector. The spectral distribution and time dependence of the emission are related to electronic transition probabilities within the sample, and can be used to provide qualitative and, sometimes, quantitative information about chemical composition, structure (bonding, disorder, interfaces, quantum wells), impurities, kinetic processes, and energy transfer. [Pg.29]

Photoluminescence is a well-established and widely practiced tool for materials analysis. In the context of surface and microanalysis, PL is applied mostly qualitatively or semiquantitatively to exploit the correlation between the structure and composition of a material system and its electronic states and their lifetimes, and to identify the presence and type of trace chemicals, impurities, and defects. [Pg.383]

Electronics Production of circuit boards (producing contacts in boreholes), modified electrolytic condensers, modified field effect transistors, molecular electronics (unidirectional conductors), photostructural lacquers based on ICPs (electron beam lithography), novel photoluminescent diodes (LED), data storage (e.g. spatially resolved eleclrochromics)... [Pg.888]

For copolymers of structure I, for both types of side-chains, there is a striking similarity with the optical properties of the corresponding models the absorption and photoluminescence maxima of the polymers arc only 0.08-0.09 eV red-shifted relative to those of the models, as shown in Figure 16-9 (left) for the octyloxy-substituted compounds. The small shift can be readily explained by the fact that in the copolymers the chromophorcs are actually substituted by silylene units, which have a weakly electron-donating character. The shifts between absorption and luminescence maxima are exactly the same for polymers and models and the width of the emission bands is almost identical. The quantum yields are only slightly reduced in the polymers. These results confirm that the active chro-mophores are the PPV-type blocks and that the silylene unit is an efficient re-conjugation interrupter. [Pg.298]

Fluorescent small molecules are used as dopants in either electron- or hole-transporting binders. These emitters are selected for their high photoluminescent quantum efficiency and for the color of their emission. Typical examples include perylene and its derivatives 44], quinacridones [45, penlaphenylcyclopenlcne [46], dicyanomethylene pyrans [47, 48], and rubrene [3(3, 49]. The emissive dopant is chosen to have a lower excited state energy than the host, such that if an exciton forms on a host molecule it will spontaneously transfer to the dopant. Relatively small concentrations of dopant are used, typically in the order of 1%, in order to avoid concentration quenching of their luminescence. [Pg.535]

There have been very few measurements made on the physical properties of Tg derivatives, their relative greater difficulty of preparation when compared with the Tg analogs has meant little interest in their properties. However, TglOSiMeslg has been found to show photoluminescence in the blue region of the spectrum, third-order nonlinear optical properties for TgMeg have been modeled, and electronic properties for and TgMeg have been calculated. [Pg.11]

Emission of light due to an allowed electronic transition between excited and ground states having the same spin multiplicity, usually singlet. Lifetimes for such transitions are typically around 10 s. Originally it was believed that the onset of fluorescence was instantaneous (within 10 to lO-" s) with the onset of radiation but the discovery of delayed fluorescence (16), which arises from thermal excitation from the lowest triplet state to the first excited singlet state and has a lifetime comparable to that for phosphorescence, makes this an invalid criterion. Specialized terms such as photoluminescence, cathodoluminescence, anodoluminescence, radioluminescence, and Xray fluorescence sometimes are used to indicate the type of exciting radiation. [Pg.5]

Noble metal nanoparticles dispersed in insulating matrices have attracted the interest of many researchers fromboth applied and theoretical points of view [34]. The incorporation of metallic nanoparticles into easily processable polymer matrices offers a pathway for better exploitation of their characteristic optical, electronic and catalytic properties. On the other hand, the host polymers can influence the growth and spatial arrangement of the nanoparticles during the in situ synthesis, which makes them convenient templates for the preparation of nanoparticles of different morphologies. Furthermore, by selecting the polymer with certain favorable properties such as biocompatibiHty [35], conductivity [36] or photoluminescence [37], it is possible to obtain the nanocomposite materials for various technological purposes. [Pg.136]

In this study, we report on the GaN nanorod growth by HOMVPE technique with or without using a new precursor, tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(mDTC)3). The structural and optical properties of GaN nanorods were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL). [Pg.737]


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