Electronic indium compounds

Indium metal dust, particles, and vapors are toxic if ingested or inhaled, as are most of the compounds of indium. This requires the semiconductor and electronics industries that use indium compounds to provide protection for their workers. 

Acetyl ligands, in niobium complexes, C-H BDEs, 1, 298 Achiral phosphines, on polymer-supported peptides, 12, 698 Acid halides, indium compound reactions, 9, 683 Acidity, one-electron oxidized metal hydrides, 1, 294 Acid leaching, in organometallic stability studies, 12, 612 Acid-platinum rf-monoalkynes, interactions, 8, 641 Acrylate, polymerization with aluminum catalysts, 3, 280 Acrylic monomers, lanthanide-catalyzed polymerization,... 

Li, B. and Gorbett, J.D. (2004) Phase stabilization through electronic tuning electron-poorer alkali-metal—indium compounds with unprecedented In/Li clusters. J. Am. Chem. Soc., 127 (3), 926-932. 

Table 4.1-86 Effective masses of electrons (nin) and holes (nip) for indium compounds (in units of the electron mass mo)...

Electron-deficient compounds are formed by boron, aluminum, gallium, and indium as well as lithium, beryllium, and magnesium. Such compounds are... 

Table4.1-89 Electron and hole mobilities /in and /tp of indium compounds...

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

Mercury Telluride. Compounds of mercury with tellurium have gained importance as semiconductors with appHcations in infrared detection (9) and solar cells (10). The ratio of the components is varied, and other elements such as cadmium, zinc, and indium are added to modify the electronic characteristics. 

Semiconductors. Phosphine is commonly used in the electronics industry as an -type dopant for siUcon semiconductors (6), and to a lesser extent for the preparation of gaUium—indium—phosphide devices (7). For these end uses, high purity, electronic-grade phosphine is required normally >99.999% pure. The main impurities that occur in phosphine manufactured by the acid process are nitrogen [7727-37-9] hydrogen [1333-74-0] arsine [7784-42-17, carbon dioxide [124-38-9], oxygen [7782-44-7], methane [74-82-8], carbon monoxide [630-08-0], and water [7732-42-1]. Phosphine is purified by distillation under pressure to reduce the level of these compounds to <1 ppm by volume. The final product is sold as CYPURE (Cytec Canada Inc.) phosphine. 

Extensive structural, optical, and electronic studies on the chalcopyrite semiconductors have been stimulated by the promising photovoltaic and photoelectrochem-ical properties of the copper-indium diselenide, CuInSe2, having a direct gap of about 1.0 eV, viz. close to optimal for terrestrial photovoltaics, and a high absorption coefficient which exceeds 10 cm . The physical properties of this and the other compounds of the family can be modulated to some extent by a slight deviation from stoichiometry. Thus, both anion and cation deficiencies may be tolerated, inducing, respectively, n- and p-type conductivities a p-type behavior would associate to either selenium excess or copper deficiency. 

KT1 does not have the NaTl structure because the K+ ions are too large to fit into the interstices of the diamond-like Tl- framework. It is a cluster compound K6T16 with distorted octahedral Tig- ions. A Tig- ion could be formulated as an electron precise octahedral cluster, with 24 skeleton electrons and four 2c2e bonds per octahedron vertex. The thallium atoms then would have no lone electron pairs, the outside of the octahedron would have nearly no valence electron density, and there would be no reason for the distortion of the octahedron. Taken as a closo cluster with one lone electron pair per T1 atom, it should have two more electrons. If we assume bonding as in the B6Hg- ion (Fig. 13.11), but occupy the t2g orbitals with only four instead of six electrons, we can understand the observed compression of the octahedra as a Jahn-Teller distortion. Clusters of this kind, that have less electrons than expected according to the Wade rules, are known with gallium, indium and thallium. They are called hypoelectronic clusters their skeleton electron numbers often are 2n or 2n — 4. 

The discussion of the main group 3-5 and 3-6 compounds in the previous sections was limited to examples in which the group 3 element E is three-coordinate, so that an empty p-orbital on E is available for overlap with a lone pair on the group 5 or 6 atom. For the same reason, the discussion here will focus on those compounds with three-coordination at gallium, indium, or thallium. In the case of the transition metal derivatives, it is transition metal -electrons that are available to overlap with the empty p-orbital on E to form the potential ir-bond, as illustrated in Fig. 26. 

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