Mass, effective

In Chapter 1, we derived that the group velocity of a wave packet may be written as 

We want to write down Newton s equation for the electron in a metal and obtain 

We now assume that a force F is acting on the wave packet. Newton s equation may 

We recognize this equation as Newton s law force = mass x acceleration, provided that we define an effective mass m as 

In the FEM model, the effective mass m is equal to the real mass of the electron. Narrow bands have a high density of states, a large absolute value of the second 

The energy of a free electron Bloch wave is related to the wave vector as  

In other words, the effective mass of an electron Bloch wave is inversely related to the curvature of the E(k) diagram. Strong curvatures mean small effective masses and vice versa. The effective mass is generally expressed in units of electron rest mass in a vacuum, i.e. m /mo. 

The effective mass concept is only defined near a band maximum or minimum where the energy can be approximated as a quadratic function of wave vector, k. Note that near a minimum in energy bands the E(k) function is concave up and 1/m 0 while near a maximum, 1/m 0. The negative effective mass near a maximum indicates that charge is being carried by holes rather than electrons. 

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Use Equation VIII-1 to determine the effective mass of the cantilever if the cantilever has a spring constant C = 20 N/m, the minimum detectable force gradient is hF/dz = 4 X 10 N/m, and the frequency shift is 200 kHz. How does the frequency shift depend on distance from the surface if the force has a 1/z distance dependence ... 

The linear dependence of C witii temperahire agrees well with experiment, but the pre-factor can differ by a factor of two or more from the free electron value. The origin of the difference is thought to arise from several factors the electrons are not tndy free, they interact with each other and with the crystal lattice, and the dynamical behaviour the electrons interacting witii the lattice results in an effective mass which differs from the free electron mass. For example, as the electron moves tlirough tiie lattice, the lattice can distort and exert a dragging force. 

In this equation, m. is the effective mass of the reaction coordinate, q(t -1 q ) is the friction kernel calculated with the reaction coordinate clamped at the barrier top, and 5 F(t) is the fluctuating force from all other degrees of freedom with the reaction coordinate so configured. The friction kernel and force fluctuations are related by the fluctuation-dissipation relation... 

Since shallow-level impurities have energy eigenvalues very near Arose of tire perfect crystal, tliey can be described using a perturbative approach first developed in tire 1950s and known as effective mass theoiy (EMT). The idea is to approximate tire band nearest to tire shallow level by a parabola, tire curvature of which is characterized by an effective mass parameter m. ... 

The supporting medium was water at 298 K (p = 0.99727), and the density of latex is 1.2049 g cm . The latex particles had an average radius of 2.12 x 10 mm hence, their effective mass corrected for buoyancy is their volume times the density difference Ap between latex and the supporting medium, water... 

The main conclusion to be drawn from these studies is that for most practical purposes the linear rate model provides an adequate approximation and the use of the more cumbersome and computationally time consuming diffusing models is generally not necessary. The Glueckauf approximation provides the required estimate of the effective mass transfer coefficient for a diffusion controlled system. More detailed analysis shows that when more than one mass transfer resistance is significant the overall rate coefficient may be estimated simply from the sum of the resistances (7) ... 

The uncertainty principle, according to which either the position of a confined microscopic particle or its momentum, but not both, can be precisely measured, requires an increase in the carrier energy. In quantum wells having abmpt barriers (square wells) the carrier energy increases in inverse proportion to its effective mass (the mass of a carrier in a semiconductor is not the same as that of the free carrier) and the square of the well width. The confined carriers are allowed only a few discrete energy levels (confined states), each described by a quantum number, as is illustrated in Eigure 5. Stimulated emission is allowed to occur only as transitions between the confined electron and hole states described by the same quantum number. 

Reaction rates typically are strongly affected by temperature (76,77), usually according to the Arrhenius exponential relationship. However, side reactions, catalytic or equiHbrium effects, mass-transfer limitations in heterogeneous (multiphase) reactions, and formation of intermediates may produce unusual behavior (76,77). Proposed or existing reactions should be examined carefully for possible intermediate or side reactions, and the kinetics of these side reactions also should be observed and understood. 

Near a conduction band minimum the energy of electrons depends on the momentum ia the crystal. Thus, carriers behave like free electrons whose effective mass differs from the free electron mass. Their energy is given by equation 1, where E is the energy of the conduction band minimum, is the... 

Remarkably, although band stmcture is a quantum mechanical property, once electrons and holes are introduced, theit behavior generally can be described classically even for deep submicrometer geometries. Some allowance for band stmcture may have to be made by choosing different values of effective mass for different appHcations. For example, different effective masses are used in the density of states and conductivity (26). 

Fig. 2. Electron drift velocities as a function of electric field for A, GaAs and B, Si The gradual saturation of curve B is characteristic of all indirect semiconductors. Curve A is characteristic of direct gap semiconductors and at low electric fields this curve has a steeper slope which reflects the larger electron mobiUty. The peak in curve A is the point at which a substantial fraction of the electrons have gained sufficient energy to populate the indirect L minimum which has a much larger electron-effective mass than the F minimum. Above 30 kV/cm (not shown) the drift velocity in Si exceeds that in...

Where b is Planck s constant and m and are the effective masses of the electron and hole which may be larger or smaller than the rest mass of the electron. The effective mass reflects the strength of the interaction between the electron or hole and the periodic lattice and potentials within the crystal stmcture. In an ideal covalent semiconductor, electrons in the conduction band and holes in the valence band may be considered as quasi-free particles. The carriers have high drift mobilities in the range of 10 to 10 cm /(V-s) at room temperature. As shown in Table 4, this is the case for both metallic oxides and covalent semiconductors at room temperature. 

General Principles There are two main types of mass flowmeters (1) the so-called true mass flowmeter, which responds directly to mass flow rate, and (2) the inferential mass flowmeter, which commonly measures volume flow rate aud flmd density separately. A variety of types of true mass flowmeters have been developed, including the following (a) the Maguus-effect mass flowmeter, (b) the axial-flow, transverse-momentum mass flowmeter, (c) the radial-flow, transverse-momentum mass flowmeter, (d) the gyroscopic transverse-momentum mass flowmeter, aud (e) the thermal mass flowmeter. Type b is the basis for several commercial mass flowmeters, one version of which is briefly described here. 

One further effect of the formation of bands of electron energy in solids is that the effective mass of elecuons is dependent on the shape of the E-k curve. If dris is the parabolic shape of the classical free electron tlreoty, the effective mass is the same as tire mass of the free electron in space, but as tlris departs from the parabolic shape the effective mass varies, depending on the curvature of tire E-k curve. From the dehnition of E in terms of k, it follows that the mass is related to the second derivative of E widr respect to k tlrus... 

As might be anticipated, tire above relationship does not imply that electrons in metals are essentially different in mass from the elecU on in free space, but merely that the response of these electrons to an applied force is different, being reflected in the effective mass. 

In most metals the electron behaves as a particle having approximately the same mass as the electron in free space. In the Group IV semiconductors, dris is usually not the case, and the effective mass of electrons can be substantially different from that of the electron in free space. The electronic sUmcture of Si and Ge utilizes hybrid orbitals for all of the valence elecU ons and all electron spins are paired within this structure. Electrons may be drermally separated from the elecU on population in dris bond structure, which is given the name the valence band, and become conduction elecU ons, creating at dre same time... 

The effective masses of holes and electrons in semiconductors are considerably less than that of the free electron, and die conduction equation must be modified accordingly using the effective masses to replace tire free electron mass. The conductivity of an intrinsic semiconductor is then given by... 

In the opposite case of slow flip limit, cojp co, the exponential kernel can be approximated by the delta function, exp( —cUj t ) ii 2S(r)/coj, thus renormalizing the kinetic energy and, consequently, multiplying the particle s effective mass by the factor M = 1 + X The rate constant equals the tunneling probability in the adiabatic barrier I d(Q) with the renormalized mass M, ... 

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