Doped dopants

The standard method of adjusting the conductivity of a semiconductor and choosing the nature (electrons or holes) of the dominant, majority, carriers is by controlled doping. Dopants are incorporated into the solid s covalent bond network. This allows the construction of p-n junctions in which the concentration profiles of the dopants, and therefore the spatial dependence of the energy-level positions, remain stable despite the existence of high internal electric fields, p-n junctions have been the basic element of many electronic components [230]. 

Hu Y., Tan O. K., and Ong C. Y., The effects of doping dopants on the characterization of low temperature nano-sized SrTiOj g oxygen gas sensors. The 6th East Asia Conference on Chemical Sensors, Guilin, China, 74, 2005. 

The doped dopant can be maintained with comparative stability. 

Alternatively, as in Figure 9.9(b), a dopant with one valence electron fewer than the host contributes an impurity band 1 which is empty but more accessible to electrons from the valence band. An example of such a p-type semiconductor is silicon doped with aluminium KL3s 3p ) in which the band gap is about 0.08 eY... 

Tyndalization Tyndall scattering Type 4340 alloy steel n-Type dopants p-Type doping... 

The picture presented above for confinement of the excitons within the device is for the EM layer sandwiched between the HTL and ETL. The EM need not be a discrete layer in the OLED, however, for exciton confinement to occur. Alternatively, the EM can consist of a luminescent molecule doped (- 1%) into a polymeric or molecular host material (40,41,54,55). So long as the energy gap (or band gap) of the host is higher than that of the EM dopant, excitons will be effectively trapped or confined on the dopant molecules leading to improved EL efficiency. An example of such a dopant-based device... 

Silane, pure or doped, is used to prepare semiconducting siUcon by thermal decomposition at >600° C. Gaseous dopants such as germane, arsine, or diborane maybe added to the silane at very low concentrations in the epitaxial growing of semiconducting siUcon for the electronics industry. Higher silanes, eg, Si H and Si Hg, are known but are less stable than SiH. These are analogues of lower saturated hydrocarbons. 

Autodopiag occurs whea dopants are unintentionally released from a substrate through diffusion and evaporation, and subsequently reiacorporated during the deposition layer. Epitaxial layers are typically doped at concentrations of lO " -10 atoms/cm. The higher levels of doping are used in bipolar technology where the epilayer forms the transistor base. The epitaxial layer can be up to several hundred micrometers, and as thin as 0.05—0.5 p.m. Uniformities of 5% are common. 

Dopant species can be codeposited with the Si02 by introducing small amounts of the dopants in hydride or haUde form. P-doped Si02, called P-glass, functions as an insulator between polysiUcon gates and the top metallisation layer of ICs. It is also used as a final passivation layer over devices, and as agettering source (17). 

Diffusion. Another technique for modifying the electrical properties of siUcon and siUcon-based films involves introducing small amounts of elements having differing electrical compositions, dopants, into substrate layers. Diffusion is commonly used. There are three ways dopants can be diffused into a substrate film (/) the surface can be exposed to a chemical vapor of the dopant at high temperatures, or (2) a doped-oxide, or (J) an ion-implanted layer can be used. Ion implantation is increasingly becoming the method of choice as the miniaturization of ICs advances. However, diffusion is used in... 

During epitaxial growth, the semiconductor layers must be doped to form thep—n junction and conductive current spreading window layers. Eor III—V materials, zinc, Zn beryUium, Be carbon, C magnesium. Mg and siUcon, Si are commonly employed as -type dopants, whereas tellurium, Te ... 

Semiconductors (qv) are materials with resistivities between those of conductors and those of insulators (between 10 and 10 H-cm). The electrical properties of a semiconductor determine the hmctional performance of the device. Important electrical properties of semiconductors are resistivity and dielectric constant. The resistivity of a semiconductor can be varied by introducing small amounts of material impurities or dopants. Through proper material doping, electron movement can be precisely controlled, producing hmctions such as rectification, switching, detection, and modulation. 

In moleculady doped polymers, charge transport is carried out by the hole-transporting molecular dopants, usually aromatic amines. The polymer merely acts as a binder. The hole mobiUty is sensitive to the dopant concentrations. For example, the hole mobiUty of... 

At very high dopant concentrations, transport occurs direcdy between the dopant molecules. The polymer acts only as a binder in most cases. Taking TPD-doped PVK as an example, at low TPD concentrations the hole mobihty first decreases from 3 x 10 cm /Vs to 10 cm /Vs with increasing TPD concentration, because TPD molecules act as hole traps (48,49). At higher TPD concentrations, new direct transport channels between the TPD molecules open up and the hole mobihty increases to lO " cm /Vs for ca 60% TPD doping (Table 1, entries 9—11) (48,49). In this case, there is no evidence for unusual interaction between TPD and PVK that affects the hole transport process. 

Fig. 9. Spectral sensitivity of detectors where the detector temperatures in K are in parentheses, and the dashed line represents the theoretical limit at 300 K for a 180° field of view, (a) Detectors from near uv to short wavelength infrared (b) lead salt family of detectors and platinum siUcide (c) detectors used for detection in the mid- and long wavelength infrared. The Hg CdTe, InSb, and PbSnTe operate intrinsically, the doped siUcon is photoconductive, and the GaAs/AlGaAs is a stmctured supedattice and (d) extrinsic germanium detectors showing the six most popular dopants.

Fig. 1. (a) Silicon (valence = 4) crystal lattice shown in two dimensions with no broken bonds, T = 0 K (b) siUcon crystal lattice with a broken bond (c) sibcon crystal lattice with a siUcon atom displaced by a donor dopant, ie, -doped (valence = 5) and (d) siUcon crystal lattice with a siUcon atom displaced... 

When a sibcon crystal is doped with atoms of elements having a valence of less than four, eg, boron or gallium (valence = 3), only three of the four covalent bonds of the adjacent sibcon atoms are occupied. The vacancy at an unoccupied covalent bond constitutes a hole. Dopants that contribute holes, which in turn act like positive charge carriers, are acceptor dopants and the resulting crystal is -type (positive) sibcon (Fig. Id). 

The carrier concentrations in doped or extrinsic semiconductors to which donor or acceptor atoms have been added can be deterrnined by considering the chemical kinetics or mass action of reactions between electrons and donor ions or between holes and acceptor ions. The condition for electrical neutraHty is given by equation 6. When the predominant dopants are donors, the semiconductor is... 

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