Diffusive crystal growth

Figure 1-11 Concentration profile for (a) crystal growth controlled by interface reaction (the concentration profile is flat and does not change with time), (b) diffusive crystal growth with t2 = 4fi and = 4t2 (the profile is an error function and propagates according to (c) convective crystal growth (the profile is an exponential function and does not change with time), and (d) crystal growth controlled by both interface reaction and diffusion (both the interface concentration and the length of the profile vary).

Nucleation is necessary for the new phase to form, and is often the most difficult step. Because the new phase and old phase have the same composition, mass transport is not necessary. However, for very rapid interface reaction rate, heat transport may play a role. The growth rate may be controlled either by interface reaction or heat transport. Because diffusivity of heat is much greater than chemical diffusivity, crystal growth controlled by heat transport is expected to be much more rapid than crystal growth controlled by mass transport. For vaporization of liquid (e.g., water vapor) in air, because the gas phase is already present (air), nucleation is not necessary except for vaporization (bubbling) beginning in the interior. Similarly, for ice melting (ice water) in nature, nucleation does not seem to be difficult. 

Diffusive crystal growth at a fixed temperature would not result in a constant crystal growth rate (see below). However, under some specific conditions, such as continuous slow cooling, or in the presence of convection with diffusion across the boundary layer, time-independent growth rate may be achieved. Similarly, time-independent dissolution rate may also be achieved. 

Figure 4-23 Trace element diffusion profiles during diffusive crystal growth for (a) various Df/D ratios and (b) various Ki values.

Figure 4-23 Trace element diffusion profiles during diffusive crystal growth...

These interactions are vital to understanding the dynamics of many surface phenomena, such as cluster formation and diffusion, crystal growth, surface reactivity, adsorption and desorption, and many others. 

A 3 4 5 6 net was recent found by the same group. Using different reaction conditions (slow diffusion crystal growth) but identical ligands the compound... 

Dislocation theory as a portion of the subject of solid-state physics is somewhat beyond the scope of this book, but it is desirable to examine the subject briefly in terms of its implications in surface chemistry. Perhaps the most elementary type of defect is that of an extra or interstitial atom—Frenkel defect [110]—or a missing atom or vacancy—Schottky defect [111]. Such point defects play an important role in the treatment of diffusion and electrical conductivities in solids and the solubility of a salt in the host lattice of another or different valence type [112]. Point defects have a thermodynamic basis for their existence in terms of the energy and entropy of their formation, the situation is similar to the formation of isolated holes and erratic atoms on a surface. Dislocations, on the other hand, may be viewed as an organized concentration of point defects they are lattice defects and play an important role in the mechanism of the plastic deformation of solids. Lattice defects or dislocations are not thermodynamic in the sense of the point defects their formation is intimately connected with the mechanism of nucleation and crystal growth (see Section IX-4), and they constitute an important source of surface imperfection. 

The kinetics of crystal growth has been much studied Refs. 98-102 are representative. Often there is a time lag before crystallization starts, whose parametric dependence may be indicative of the nucleation mechanism. The crystal growth that follows may be controlled by diffusion or by surface or solution chemistry (see also Section XVI-2C). 

Hydrothermal crystallisation processes occur widely in nature and are responsible for the formation of many crystalline minerals. The most widely used commercial appHcation of hydrothermal crystallization is for the production of synthetic quartz (see Silica, synthetic quartz crystals). Piezoelectric quartz crystals weighing up to several pounds can be produced for use in electronic equipment. Hydrothermal crystallization takes place in near- or supercritical water solutions (see Supercritical fluids). Near and above the critical point of water, the viscosity (300-1400 mPa s(=cP) at 374°C) decreases significantly, allowing for relatively rapid diffusion and growth processes to occur. 

Supersaturation has been observed to affect contact nucleation, but the mechanism by which this occurs is not clear. There are data (19) that infer a direct relationship between contact nucleation and crystal growth. This relationship has been explained by showing that the effect of supersaturation on contact nucleation must consider the reduction in interfacial supersaturation due to the resistance to diffusion or convective mass transfer (20). 

The effects of a solvent on growth rates have been attributed to two sets of factors (28) one has to do with the effects of solvent on mass transfer of the solute through adjustments in viscosity, density, and diffusivity the second is concerned with the stmcture of the interface between crystal and solvent. The analysis (28) concludes that a solute-solvent system that has a high solubiUty is likely to produce a rough interface and, concomitandy, large crystal growth rates. 

Crystal growth is a diffusion and integration process, modified by the effect of the solid surfaces on which it occurs (Figure 5.3). Solute molecules/ions reach the growing faces of a crystal by diffusion through the liquid phase. At the surface, they must become organized into the space lattice through an... 

These apparent restrictions in size and length of simulation time of the fully quantum-mechanical methods or molecular-dynamics methods with continuous degrees of freedom in real space are the basic reason why the direct simulation of lattice models of the Ising type or of solid-on-solid type is still the most popular technique to simulate crystal growth processes. Consequently, a substantial part of this article will deal with scientific problems on those time and length scales which are simultaneously accessible by the experimental STM methods on one hand and by Monte Carlo lattice simulations on the other hand. Even these methods, however, are too microscopic to incorporate the boundary conditions from the laboratory set-up into the models in a reahstic way. Therefore one uses phenomenological models of the phase-field or sharp-interface type, and finally even finite-element methods, to treat the diffusion transport and hydrodynamic convections which control a reahstic crystal growth process from the melt on an industrial scale. 

We have so far assumed that the atoms deposited from the vapor phase or from dilute solution strike randomly and balHstically on the crystal surface. However, the material to be crystallized would normally be transported through another medium. Even if this is achieved by hydrodynamic convection, it must nevertheless overcome the last displacement for incorporation by a random diffusion process. Therefore, diffusion of material (as well as of heat) is the most important transport mechanism during crystal growth. An exception, to some extent, is molecular beam epitaxy (MBE) (see [3,12-14] and [15-19]) where the atoms may arrive non-thermalized at supersonic speeds on the crystal surface. But again, after their deposition, surface diffusion then comes into play. 

A normal diffusion process, however, runs at a finite concentration of particles different from zero. In this situation it was found [101] that a fractal character (73) of the resulting structure is restricted to an interval a < R < if), where d is the diffusion length (67). Larger clusters have a constant density on a length scale larger than They are no longer fractal there. These observations have various consequences for crystal growth, and will be discussed in the next section. 

In many crystal growth phenomena, transportation of material occurs not only via diffusion but also via hydrodynamic convection. We assume... 

The extension of generic CA systems to two dimensions is significant for two reasons first, the extension brings with it the appearance of many new phenomena involving behaviors of the boundaries of, and interfaces between, two-dimensional patterns that have no simple analogs in one-dimension. Secondly, two-dimensional dynamics permits easier (sometimes direct) comparison to real physical systems. As we shall see in later sections, models for dendritic crystal growth, chemical reaction-diffusion systems and a direct simulation of turbulent fluid flow patterns are in fact specific instances of 2D CA rules and lattices. 

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