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Diffuse incident model

The DI model (diffuse incident model, Figure 25c) is thought to take into account the abovementioned inadequacies. The model in which profiles of radiant power or of irradiance are independent of the radius of the cylindrical reactor was originally proposed by Huff and Walker [114] and has been tested by Jacob and Dranoff [111] using sensor equipment. Their results show that radius-independent radiant power or irradiance distribution can only be found for radii of less than 0.5 in. in their particular equipment (Figure 27). [Pg.285]

Figure 25. Characteristics of two-dimensional incidence models (a) radial, (b) partially diffuse, (c) diffuse [107] (see also [2, 3]). Figure 25. Characteristics of two-dimensional incidence models (a) radial, (b) partially diffuse, (c) diffuse [107] (see also [2, 3]).
The principal features of the cylindrical, annular, and parallel plate configurations (using the incidence model) are summarized in Table 26.1. They are based on the further simplification that the radiation field can be completely described by the radial transmission of light from the wall to the axis of the reactor (thus ignoring its diffusion from all directions within the reactor). [Pg.820]

Fig. 13. Simulated diffraction space of a 10-layer monochiral MWCNT with Hamada indices (40+8/ , 5+k) with / =0,...,9. In (a), (a ) and (02) the initial stacking at ( q was ABAB. whereas in (b), (b[) and (b2) the initial stacking was random, (a) The normal incidence pattern has a centre of symmetry only. (3 )(a2) The cusps are of two different types. The arc length separating the cusps is c (b) The normal incidence pattern now exhibits 2mm symmetry. (b )(b2) The cusps are distributed at random along the generating circles of the evolutes. These sections represent the diffuse coronae referred to in the "disordered stacking model" [17]. Fig. 13. Simulated diffraction space of a 10-layer monochiral MWCNT with Hamada indices (40+8/ , 5+k) with / =0,...,9. In (a), (a ) and (02) the initial stacking at ( q was ABAB. whereas in (b), (b[) and (b2) the initial stacking was random, (a) The normal incidence pattern has a centre of symmetry only. (3 )(a2) The cusps are of two different types. The arc length separating the cusps is c (b) The normal incidence pattern now exhibits 2mm symmetry. (b )(b2) The cusps are distributed at random along the generating circles of the evolutes. These sections represent the diffuse coronae referred to in the "disordered stacking model" [17].
In the RI model, all incident rays intersect at the center axis of the reactor tube, and Eq. 68 produces an infinite value of irradiance as r - 0. The DI model, on the other hand, proposes parallel layers of rays which are wider than the diameter of the tubular reactor and which traverse the reactor perpendicularly to its axis from all directions with equal probability. The calculated results of both models are far from reality, as found in industrial size photochemical reactors. Matsuura and Smith [107] proposed an intermediate model (PDI model, partially diffuse model, Figure 25b) in which parallel layers of rays are assumed, and the width of each is smaller than the diameter of the tubular reactor. These two-dimensional bands form by themselves radial arrangements, the center ray of each band intersecting the... [Pg.285]

The control volume of the surface reaction zone, which is at the surface of the growing film (Figure 12), links the physical situation with the mathematical model that follows. Because the control volume is small enough, the incident flux from the sources is uniform within this volume. The net rate of surface diffusion into the control volume is assumed to be negligible compared with the incident flux. An incident component entering the control volume at a rate r(i, j) is either adsorbed or reflected from the surface, where the rate of reflection is r(r, j). An adsorbed component may react at a rate r(rxt, j) to form a compound, be emitted from the surface into the gas phase at a rate r(e, j), or be codeposited with the compound in an elemental form at a rate r(d, j). [Pg.200]

Once the thermodynamic parameters of stable structures and TSs are determined from quantum-chemical calculations, the next step is to find theoretically the rate constants of all elementary reactions or elementary physical processes (say, diffusion) relevant to a particular overall process (film growth, deposition, etc.). Processes that proceed at a surface active site are most important for modeling various epitaxial processes. Quantum-chemical calculations show that many gas-surface reactions proceed via a surface complex (precursor) between an incident gas-phase molecule and a surface active site. Such precursors mostly have a substantial adsorption energy and play an important role in the processes of dielectric film growth. They give rise to competition among subsequent processes of desorption, stabilization, surface diffusion, and chemical transformations of the surface complex. [Pg.471]

Within the framework of the Schottky junction theory, many models have been developed to explain the photovoltaic spectral response of organic materials. Assuming a direct formation of carriers, without diffusion of exciton to the surface but taking into account the charge diffusion length Ln p, the photocurrent density Jsc for light incident on the junction side is [64]... [Pg.812]

Figure 11.3. S parameter from DBES (left) and the o-Ps intensity (I3) from PAL vs positron incident energy of polystyrene thin film on Cu substrate [44, 10], The line was fit to a simple diffusion model from the VEPFIT program [51]. Figure 11.3. S parameter from DBES (left) and the o-Ps intensity (I3) from PAL vs positron incident energy of polystyrene thin film on Cu substrate [44, 10], The line was fit to a simple diffusion model from the VEPFIT program [51].
Both fo(E) and J(E) depend on the positron incident energy, E. Based on the one-dimensional out-diffusion model, the solution for the o-Ps out-diffusion probability is... [Pg.340]

The results imply that the diffusion coefficient represents the thermally activated transport of electrons through the particle network. Indeed, these and subsequent studies have been interpreted with models that involve trapping of conduction band electrons or electron hopping between trap sites [158, 159]. An unexpected feature of the diffusion constants reported by Cao et al. is that they are dependent on the incident irradiance. The photocurrent rise times display a power law dependence on light intensity with a slope of -0.7. The data could be simulated if the diffusion constant was assumed to be second order in the electron concentration, D oc n. The molecular origin of this behavior is not well understood and continues to be an active area of study [157, 159]. [Pg.2763]

Here I(t) is the laser incident intensity and R is the surface reflectance of the body. Note that this model assumes no spatial variations of I(t) in the plane perpendicular to die laser beam and no heat fiansport in the direction perpendicular to the beam, a is thermal diffusivity, t is time, Cp is specific heat, k is heat conduction, p is density, and q is heat flux. [Pg.500]

The diffuse attenuation coefficient (K ) is one of several apparent optical properties (AOPs) of natural waters described by Preisendorfer [25]. Unlike inherent optical properties (lOPs) described below, AOP s depend on the quality of incident light as well as the optical qualities of the water. In spite of this apparent limitation (and in part because the differences between AOP s and lOP s were said to be small in many instances [26]), a case was argued for the standard use of to characterize natural waters for purposes of optical comparisons and bio-optical models [27,28]. Gordon [17,29] provided a practical means to adjust measurements to remove much of its dependence on the ambient light field. In particular, Gordon [17] established that, after adjustment (described below), averaged from surface to Zio% is proportional to the summed concentrations of constituent optical compounds. [Pg.65]


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See also in sourсe #XX -- [ Pg.283 , Pg.285 ]




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