Sapphire density

An additional advantage to neutron reflectivity is that high-vacuum conditions are not required. Thus, while studies on solid films can easily be pursued by several techniques, studies involving solvents or other volatile fluids are amenable only to reflectivity techniques. Neutrons penetrate deeply into a medium without substantial losses due to absorption. For example, a hydrocarbon film with a density of Ig cm havii a thickness of 2 mm attenuates the neutron beam by only 50%. Consequently, films several pm in thickness can be studied by neutron reflecdvity. Thus, one has the ability to probe concentration gradients at interfaces that are buried deep within a specimen while maintaining the high spatial resolution. Materials like quartz, sapphire, or aluminum are transparent to neutrons. Thus, concentration profiles at solid interfaces can be studied with neutrons, which simply is not possible with other techniques. 

The layout of the experimental set-up is shown in Figure 8-3. The laser source was a Ti sapphire laser system with chirped pulse amplification, which provided 140 fs pulses at 780 nm and 700 pJ energy at a repetition rate of 1 kHz. The excitation pulses at 390 nm were generated by the second harmonic of the fundamental beam in a 1-nun-thick LiB305 crystal. The pump beam was focused to a spot size of 80 pm and the excitation energy density was between 0.3 and 12 ntJ/crn2 per pulse. Pump-... 

A different system has been introduced by Index Instruments [2]. This modular analysis system (MAS) provides the analysis of up to four different parameters refractive index, density, colour and optical rotation. A wide range of viscosities can be handled. The analysis, wash and drying times can be selected by computer control so that crosscontamination can be reduced to undetectable levels. Samples are only in contact with inert materials such as glass, synthetic sapphire, PTFE and 316 stainless steel. 

The material for an acoustic lens should have a low attenuation, and a high velocity to minimize aberrations. Sapphire is an excellent material in both these respects. But the high velocity has a less desirable consequence. An acoustic impedance can be defined, which is equal to the product of the velocity and the density. The impedance of sapphire for longitudinal waves travelling parallel to the c-axis is thus 44.3 Mrayl, compared with the impedance of water which at room temperature is about 1.5 Mrayl, rising to 1.525 Mrayl at 60°C. When sound is transmitted across an interface between two materials of different impedance, the stress amplitude transmission coefficient is ( 6.4.1 Auld 1973 Brekhovskikh and Godin 1990)... 

The dendrimers were dissolved in a THF solution at room temperature to an optical density of 0.1 OD at 430 nm, and excited into the Soret band with a frequency-doubled femtosecond Ti Sapphire oscillator (Spectra Physics). The intensity of the excitation light was kept at... 

Attenuated total internal reflection (ATR) probes offer several advantages over other probe types. ATR is a phenomenon that relies on a difference in the index of refraction of a crystal and that of the solution with which it is in contact to prevent light from escaping the crystal. Only the evanescent wave of the light interacts with the solution layer at the crystal face. The result is an optical pathlength of only a few microns. Typical designs make use of faceted crystals or hemispheres (see Figure 6.1). The most common ATR material in the UV-vis is sapphire. In rare cases, fused silica may be used. ATR allows spectra to be taken of neat samples with optical density (OD) of 500-1000... 

The electrical conductivity of sapphire in a particular crystallographic direction was found to be 1.25mSm 1 at 1773 K. An independent experiment on the same material at the same temperature determined the oxygen tracer diffusion coefficient to be 0.4nm2s 1, the diffusion occurring by a vacancy mechanism. Do these data favour oxygen ion movement as the dominant charge transport mechanism (Relative atomic masses, A1 = 27 and 0=16 density of sapphire, 3980 kgm-3.)... 

Fig. 7.6. TEM cross-sections of PLD ZnO thin films grown on MgO buffered c-plane sapphire, (a) ZnO was grown at 0.016 mbar O2 and 600° C and shows decreasing density of dislocation lines from interface to surface, (b) ZnO was grown at 8 x 10 4mbar O2 and 580° C. The thickness of the MgO buffer layer is about 10 nm. Images by W. Mader, Bonn...

Figure 15 Turnover rate for CO oxidation on Pd particles supported on sapphire. The points represent the experimental data from Rumpf et al. [131]. The symbols ( ) and (O) correspond to mean particle sizes of 3.9nm and 3.7 nm and particles densities of 1.6 x 1010 cm-2 and 1.3 x 1012 cm-2, respectively. The continuous curves represent the experimental fit with Eqs. (3), (4), (5) and (13) using a = 0.46 and E — E = 0.26 eV (from Ref. [144]). The dotted-dashed line represents the fit with non interacting diffusion fields around the Pd particles (from Ref. [131]).

Most wurtzite GaN films have been grown on either 6H-SiC(0001) (see Datareview A7.8) or sapphire (A1203) substrates. The orientation of sapphire most frequently used is C-plane (0001) although there have been some structural characterisation studies made for growth on A-plane (1120) [1-4] and R-plane (0112) [1,2,5-7] substrates. Other defects found in the a-phase include inversion domain boundaries, prismatic faults, nanopipes, pits, voids and cracks. The limited structural information available on bulk single crystals of a-GaN shows that they contain a low density of line dislocations and stacking faults near inclusions [12] (see Datareview A7.5). 

FIGURE 1 Cross-sectional TEM image of GaN on c-plane sapphire (grown by MOCVD) taken near the [1100] zone with diffraction vector g-2g (g = 1120). Threading dislocations extend from a highly defective low temperature GaN buffer layer to the film surface. The density of threading dislocations is 1010 cm 2. The majority of dislocations are edge defects with b = <1120>. 

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