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Interstitial positions

Figure 5.1. Interstitial positions between layers of metal atoms... Figure 5.1. Interstitial positions between layers of metal atoms...
However, when deliberately employed, channeling is a powerful tool that may be used to determine the lattice positions of specific types of atoms or the number of specific atoms in interstitial positions (out of the lattice structure). Further information on this technique is available. ... [Pg.689]

If the pressure of O2 above a crystalline oxide is increased, the oxide-ion activity in the solid can be increased by placing the supernumerary ions in the interstitial positions, e.g. ... [Pg.642]

ZnO contauns excess metal which is accommodated interstitially, i.e. at positions in the lattice which are unoccupied in the perfect crystal. The process by which ZnO in oxygen gas acquires excess metal may be pictured as follows. The outer layers of the crystal are removed, oxygen is evolved, and zinc atoms go into interstitial positions in the oxide. We represent interstitial zinc by (ZnO). However, the interstitial zinc atoms may ionise to give (Zn O) or even (Zn O). The extra electrons produced in this way must occupy electron levels which would be vacant in the perfect crystal. We represent them by the symbol (eo), and refer to them as free electrons. They can be pictured as Zn ions at normal cation sites. We see therefore that three reactions can be written, each giving non-stoichiometric ZnO ... [Pg.247]

As an example of a different type of oxide, we may consider ZnO. This oxide evolves oxygen and forms cations in interstitial positions (Zn O) or (Zn O), and free electrons (eo). If the interstitial zinc ions are only singly charged, the reaction describing the non-stoichiometry may be written... [Pg.255]

There are a number of differences between interstitial and substitutional solid solutions, one of the most important of which is the mechanism by which diffusion occurs. In substitutional solid solutions diffusion occurs by the vacancy mechanism already discussed. Since the vacancy concentration and the frequency of vacancy jumps are very low at ambient temperatures, diffusion in substitutional solid solutions is usually negligible at room temperature and only becomes appreciable at temperatures above about 0.5T where is the melting point of the solvent metal (K). In interstitial solid solutions, however, diffusion of the solute atoms occurs by jumps between adjacent interstitial positions. This is a much lower energy process which does not involve vacancies and it therefore occurs at much lower temperatures. Thus hydrogen is mobile in steel at room temperature, while carbon diffuses quite rapidly in steel at temperatures above about 370 K. [Pg.1272]

Assuming the composition of the hydride to be expressed by PdjH2 (which corresponds to PdH0. 7) and bearing in mind the interstitial positioning of the hydrogen in the palladium lattice, the authors postulate the existence of the following equilibrium at the surface of the j8-hydride phase... [Pg.258]

In a review of the subject, Ubbelohde [3] points out that there is only a relatively small amount of data available concerning the properties of solids and also of the (product) liquids in the immediate vicinity of the melting point. In an early theory of melting, Lindemann [4] considered that when the amplitude of the vibrational displacements of the atoms of a particular solid increased with temperature to the point of attainment of a particular fraction (possibly 10%) of the lattice spacing, their mutual influences resulted in a loss of stability. The Lennard-Jones—Devonshire [5] theory considers the energy requirement for interchange of lattice constituents between occupation of site and interstitial positions. Subsequent developments of both these models, and, indeed, the numerous contributions in the field, are discussed in Ubbelohde s book [3]. [Pg.2]

Small amounts of boron stabilize a W(,Fe7-type /z-phase Hf 4,Alo 5oBQQ5 with B atoms occupying interstitial positions. In the cast alloys of Mo 4 5Re,5 5B 2 2... [Pg.138]

Unlike the di-f dihalides, such compounds differ little in energy from both the equivalent quantity of metal and trihalide, and from other combinations with a similar distribution of metal-metal and metal-halide bonding. So the reduced halide chemistry of the five elements shows considerable variety, and thermodynamics is ill-equipped to account for it. All four elements form di-iodides with strong metal-metal interaction, Prl2 occurring in five different crystalline forms. Lanthanum yields Lai, and for La, Ce and Pr there are hahdes M2X5 where X=Br or I. The rich variety of the chemistry of these tri-f compounds is greatly increased by the incorporahon of other elements that occupy interstitial positions in the lanthanide metal clusters [3 b, 21, 22]. [Pg.8]

In the case of the Frenkel defect, the "square" represents where the cation was supposed to reside in the lattice before it moved to its interstitial position in the cation sub-lattice. Additionally, "Anti-Frenkel" defects can exist in the anion sub-lattice. The substitutional defects axe shown as the same size as the cation or anion it displaced. Note that if they were not, the lattice structure would be disrupted from regularity at the points of ins tlon of the foreign ion. [Pg.80]

Extrinsic Defects Extrinsic defects occur when an impurity atom or ion is incorporated into the lattice either by substitution onto the normal lattice site or by insertion into interstitial positions. Where the impurity is aliovalent with the host sublattice, a compensating charge must be found within the lattice to pre-serve elec-troneutality. For example, inclusion of Ca in the NaCl crystal lattice results in the creation of an equal number of cation vacancies. These defects therefore alter the composition of the solid. In many systems the concentration of the dopant ion can vary enormously and can be used to tailor specific properties. These systems are termed solid solutions and are discussed in more detail in Section 25.1.2. [Pg.420]

Diffusion and migration in solid crystalline electrolytes depend on the presence of defects in the crystal lattice (Fig. 2.16). Frenkel defects originate from some ions leaving the regular lattice positions and coming to interstitial positions. In this way empty sites (holes or vacancies) are formed, somewhat analogous to the holes appearing in the band theory of electronic conductors (see Section 2.4.1). [Pg.135]

By a shift of an ion from a stable position into an interstitial position and of another ion from an interstitial position into the hole formed... [Pg.136]

A somewhat different situation is found in the type of point defect known as a Frenkel defect. In this case, an atom or ion is found in an interstitial position rather than in a normal lattice site as is shown in Figure 7.17. In order to position an atom or ion in an interstitial position, it must be possible for it to be close to other lattice members. This is facilitated when there is some degree of covalence in the bonding as is the case for silver halides and metals. Accordingly, Frenkel defects are the dominant type of defect in these types of solids. [Pg.242]

One type of diffusion mechanism is known as the interstitial mechanism because it involves movement of a lattice member from one interstitial position to another. When diffusion involves the motion of a particle from a regular lattice site into a vacancy, the vacancy then is located where the site was vacated by the moving species. Therefore, the vacancy moves in the opposite direction to that of the moving lattice member. This type of diffusion is referred to as the vacancy mechanism. In some instances, it is possible for a lattice member to vacate a lattice site and for that site to be filled simultaneously by another unit. In effect, there is a "rotation" of two lattice members, so this mechanism is referred to as the rotation mechanism of diffusion. [Pg.279]

Although the formation of ionic hydrides is usually exothermic, the formation of interstitial hydrides may have positive enthalpy values. Physical characteristics of interstitial hydrides are determined by the fact that hydrogen atoms in interstitial positions cause some expansion of the lattice but contribute very little mass. Consequently, the interstitial hydrides always have lower densities than the metal itself, even though the crystal structure is normally the same. When interstitial positions contain hydrogen atoms, the flow of electrons in conduction bands within the metal is impeded, so the... [Pg.421]

When most transition metals are heated with carbon, the lattice expands and carbon atoms occupy interstitial positions. The metals become harder, higher melting, and more brittle as a result. For... [Pg.450]

Fig. 25. Schematic diagram indicating a possible hydrogen diffusion mechanism, by which (a) the hydrogen leaves a Si—H bond for an interstitial position, (b) inserts into a strained Si—Si bond, (c) returns to an interstitial position, and (d) passivates a pre-existing dangling bond (Kakalios and Jackson, 1988). [Pg.445]


See other pages where Interstitial positions is mentioned: [Pg.1775]    [Pg.112]    [Pg.639]    [Pg.19]    [Pg.447]    [Pg.447]    [Pg.38]    [Pg.206]    [Pg.470]    [Pg.260]    [Pg.54]    [Pg.246]    [Pg.253]    [Pg.254]    [Pg.255]    [Pg.255]    [Pg.803]    [Pg.420]    [Pg.135]    [Pg.280]    [Pg.421]    [Pg.422]    [Pg.422]    [Pg.482]    [Pg.730]    [Pg.445]    [Pg.447]    [Pg.450]    [Pg.455]   
See also in sourсe #XX -- [ Pg.124 ]




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