Defect microelectronics industry

FIGURE 13.3. The absence of aerosol particles (dust or liquid) is especially important in the microelectronics industry. The presence of dust or liquid contaminants on the surface of virgin semiconductor (a) will lead to coating defects in the preparation of the microdrcuits (Z>) and defects in the final product (c). 

In addition to atomic point defects, semiconductor materials can also have electronic point defects. These defects provide mobile charge carriers that move about the crystal lattice. They provide the basis for many useful applications. In fact, the entire microelectronics industry is based on being able to control electronic defects in these materials. 

Silicon wafer has been extensively used in the semiconductor industry. CMP of silicon is one of the key technologies to obtain a smooth, defect-free, and high reflecting silicon surfaces in microelectronic device patterning. Silicon surface qualities have a direct effect on physical properties, such as breakdown point, interface state, and minority carrier lifetime, etc. Cook et al. [54] considered the chemical processes involved in the polishing of glass and extended it to the polishing of silicon wafer. They presented the chemical process which occurs by the interaction of the silicon layer and the... 

Since positron annihilation spectroscopy is highly sensitive to atomic defects in solid materials, positron annihilation experiments have been carried out extensively on silicon (Si) and silicon dioxide (Si02), both of which are extremely important for the microelectronic device industry. While several reviews are available [1], those reviews are mainly focused on positron (not positronium) annihilation behavior because positronium (Ps) formation dose not occur in bulk crystalline Si. Recent positron annihilation experimental studies revealed that Ps formation occurs in some Si-based thin films, such as porous Si and hydrogenated amorphous Si furthermore, Ps formation is dominant in high-purity amorphous Si02 thin films. In this chapter, Ps annihilation characteristics in Si and Si02 thin films will be discussed from the experimental point of view. 

The advantage of CVP, apart from the elimination of solvent induced contamination and oxidative defects, is that it is compatible with traditional inorganic semiconductor processes in the microelectronic and optoelectronic industry. This would be extremely important in the integration of polymer and inorganic semiconductors into hybrid devices with a minimum of processing steps. Moreover, CVP allows the mixture of monomeric compounds in any ratio, thus facilitating the deposition of graded films. 

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