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Atomic defect

Note that similar measurements were performed in [30] for the case of evaporation of defect atoms of lead from lead oxide, atoms of magnesium from magnesium oxide, and so on. [Pg.239]

Since the most active catalytic sites are usually steps, kinks, and surface defects, atomically resolved structural information including atomic distribution and surface structure at low pressure, possible surface restructuring, and the mobility of adsorbate molecules and of the atoms of the catalyst surface at high temperature and high pressure is crucial to understanding catalytic mechanisms on transition metal surfaces. The importance of studying the structural evolution ofboth adsorbates... [Pg.189]

With increasing size of the atoms there seems to be a further decrease the molecules HG1, HBr and HI are not known to show any tendency to combine with protons the proton affinity in the series HaO H2S -> H2Se - H2Te decreases, too, and even in the next group, NH3 PH3 -> AsH3, PH3 has a much lower proton affinity, and forms less stable bonds with electron-defective atoms than NH3. It cannot be due to a less systematic investigation, alone, that, so far, only very few PH3 complexes have been observed. [Pg.235]

Figure 8.5 Geometric configurations for a self-interstitial defect atom in an f.c.c. crystal (a) octahedral site, (b) tetrahedral site, (c) (110) crowdion, (d) (100) split, dumbbell, (e) (111) split., (f) (110) split crowdion [2]. Figure 8.5 Geometric configurations for a self-interstitial defect atom in an f.c.c. crystal (a) octahedral site, (b) tetrahedral site, (c) (110) crowdion, (d) (100) split, dumbbell, (e) (111) split., (f) (110) split crowdion [2].
Point Defects. Point defects are defined as atomic defects. Atomic defects such as metal ions can diffuse through the lattice without involving themselves with lattice atoms or vacancies (Figure 9), in contrast to atomic defects such as self-interstitials. The silicon self-interstitial is a silicon atom that is bonded in a tetrahedral interstitial site. Examples of point defects are shown in Figure 9. [Pg.287]

Schottky Defects In Schottky defect atom or ion is missing from normal site creating a vacancy. A vacancy of one of the ions is accompanied by the vacancy of the oppositely charged ions so that electrical neutrality is still maintained. [Pg.141]

Frenkel Defect In Frenkel defect atom or ion in normal site is displaced to an interstitial site thus creating a vacancy. In this defect ion is not completely missing but only shifted to interstitial site from its normal site. This defect is found in AgBr. [Pg.141]

There has been one unexpected though perhaps not too surprising result While a solid solution range for an ordered compound may be achieved by randomly dissolving defect atoms into an otherwise ordered lattice, these random defect atoms may themselves order and break the compound into a multitude of new true phases (microphases) separated by two-phase regions. [Pg.149]

All systems which we have studied behaved in a manner consistent with a constant species activity coefficient for the random defect solutes and the solvents. With the microphases the bulk of the defect atoms order to make a new parent structure, while the remainder of the defects appear in random solution. [Pg.150]

Atom or helium diffraction AD Monoenergetic beams of thermal energy neutral atoms are elastically scattered off ordered surfaces and detected as a function of scattering angle. This gives structural information on the outermost layer of the surface. Atom diffraction is extremely sensitive to surface ordering and defects. Atomic structure... [Pg.4729]

Places where this map has a value close to the atomic valence are possible sites for the atom. Waltersson used the technique for locating Li atoms in lithium tungstates, but the technique can also be used for locating possible sites for defect atoms [27] and for plotting diffusion paths [13]. A variation of the valence sum map, the D map, calculated using Equation 10.3, identifies the cavities in a structure that can accommodate the diffusing or defect atom... [Pg.410]

This is illustrated in Fig. 1, where we show two atoms moving in the neighbourhood of an ideal, unreconstructed surface, as well as a defect atom in the bulk. A calculation of the total energy as a function of the positions of the constituent atoms would yield the equilibrium structure of the surface and the distortions arising from the additional atoms. Furthermore, binding energies and the activation energies for diffusion of adsorbate and defect atoms would... [Pg.413]

Fi 1. Two atoms near the ideal, unreconstructed surface as well as a defect atom in a perfect crystal. [Pg.414]

An important simplification results if we can consider the bonding between atoms to be a local phenomenon. In this event, we would need to consider only the immediate neighbours of the adsorbate or defect atoms, and we arrive at the cluster models circled in Fig. 1. Of course, some properties of the system will depend on its extended nature. Others, including the variation in total energy with small displacements of atoms, should be described satisfactorily by a cluster calculation. In such cases, the problem has been reduced to one of molecular dimensions, so that the methods of molecular physics or theoretical chemistry could be used. For many systems of interest to the solid-state physicist, where a typical problem might be the chemisorption of a carbon monoxide molecule on the surface of a ferromagnetic metal surface such as nickel, the methods discussed in much of the rest of the present volume are inappropriate. It is necessary to seek alternatives, and this chapter is concerned with one of them, the density functional (DF) formalism. While the motivation of the solid-state physicist is perhaps different from that of the chemist, the above discussion shows that some of the goals are very similar. Indeed, it is my view that the density functional formalism, which owes much of its development and most of its applications to solid-state physicists, can make a useful contribution to theoretical chemistry. [Pg.414]

Electronic and/or geometric effects could be used to explain the size-induced activity changes for metal catalysts [99], To understand which effect dominates, the authors plotted the size-dependent normalized turnover frequency (TOE) calculated based on the number of Pd atoms located at the facets, at the defect sites, the total surface atoms, and the number of Pd particles of different size (blue triangles), as shown in Fig. 4.12b. If the geometric effect dominates the observed size-induced activity changes, the TOE should remain constant for particles of different sizes. The TOFs calculated based on the total surface atoms, defect atoms, and number of particles increased monotonically, while the TOFs ealculated based on face atoms remained constant for particle sizes larger than 1.5 nm. These results indicate that for Pd nanoparticles 1.5-1.9 run in size, the geometric effect dominates the... [Pg.80]

As an element of structural defects, atomic vacancies, or point defects are very important in materials and have remarkable effect on the physical properties of a material such as electrical resistance, heat capacity, and mechanical strength. A vacancy formation is associated with local strain, densification, quantum entrapment, and polarization. [Pg.256]


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See also in sourсe #XX -- [ Pg.3 , Pg.235 ]




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