Point defects electronic

Point defects, electrons, and holes as chemical species... 

Figure Bl.19.6. Constant current 50 mn x 50 mn image of a Cu(l 11) surface held at 4 K. Tliree monatomic steps and numerous point defects are visible. Spatial oscillations (electronic standing waves) with a...

If tlie level(s) associated witli tlie defect are deep, tliey become electron-hole recombination centres. The result is a (sometimes dramatic) reduction in carrier lifetimes. Such an effect is often associated witli tlie presence of transition metal impurities or certain extended defects in tlie material. For example, substitutional Au is used to make fast switches in Si. Many point defects have deep levels in tlie gap, such as vacancies or transition metals. In addition, complexes, precipitates and extended defects are often associated witli recombination centres. The presence of grain boundaries, dislocation tangles and metallic precipitates in poly-Si photovoltaic devices are major factors which reduce tlieir efficiency. 

In addition to the configuration, electronic stmcture and thennal stability of point defects, it is essential to know how they diffuse. A variety of mechanisms have been identified. The simplest one involves the diffusion of an impurity tlirough the interstitial sites. For example, copper in Si diffuses by hopping from one tetrahedral interstitial site to the next via a saddle point at the hexagonal interstitial site. 

The physical properties of tellurium are generally anistropic. This is so for compressibility, thermal expansion, reflectivity, infrared absorption, and electronic transport. Owing to its weak lateral atomic bonds, crystal imperfections readily occur in single crystals as dislocations and point defects. 

Electrical Properties. Generally, deposited thin films have an electrical resistivity that is higher than that of the bulk material. This is often the result of the lower density and high surface-to-volume ratio in the film. In semiconductor films, the electron mobiHty and lifetime can be affected by the point defect concentration, which also affects electromigration. These effects are eliminated by depositing the film at low rates, high temperatures, and under very controUed conditions, such as are found in molecular beam epitaxy and vapor-phase epitaxy. 

One feature of oxides is drat, like all substances, they contain point defects which are most usually found on the cation lattice as interstitial ions, vacancies or ions with a higher charge than dre bulk of the cations, refened to as positive holes because their effect of oxygen partial pressure on dre electrical conductivity is dre opposite of that on free electron conductivity. The interstitial ions are usually considered to have a lower valency than the normal lattice ions, e.g. Zn+ interstitial ions in the zinc oxide ZnO structure. 

At the beginning of the century, nobody knew that a small proportion of atoms in a crystal are routinely missing, even less that this was not a mailer of accident but of thermodynamic equilibrium. The recognition in the 1920s that such vacancies had to exist in equilibrium was due to a school of statistical thermodynamicians such as the Russian Frenkel and the Germans Jost, Wagner and Schollky. That, moreover, as we know now, is only one kind of point defect an atom removed for whatever reason from its lattice site can be inserted into a small gap in the crystal structure, and then it becomes an interstitial . Moreover, in insulating crystals a point defect is apt to be associated with a local excess or deficiency of electrons. 

In this chapter shock modification of powders (their specific area, x-ray diffraction lines, and point defects) measurements via analytical electron microscopy, magnetization and Mossbauer spectroscopy shock activation of catalysis, solution, solid-state chemical reactions, sintering, and structural transformations enhanced solid-state reactivity. 

Further evidence for the unique nature of the shock-formed point defects is the dispersion in ESR lineshape characteristic of conductivity at temperatures above 30 K. In shock-modified powder the conductivity is constant down to 2 K, indicating that the electrons responsible for the conductivity are not trapped. These observations indicate that shock-modified rutile is in a physical defect state that has not been obtained in more conventional vacuum-reduction defect studies. 

Cottrell, A.H., 1996, Point defects in Al-Ni-Cu alloys based on the NiAl phase, Intermetallics, 4 1 Leapman, R.D., and Silcox, J.,1979, Orientation dependence of core edges in electron energy loss spectra from anysotropic materials, Phys. Rev. Lett., 42 1361. 

Investigations based on equation (a) are indirect. Direct structural studies using diffraction techniques (X-ray or neutron), or electron microscopy, while they cannot detect the low concentrations of defects present in NiO or CoO are indispensible to the study of grossly non-stoichiometric oxides like FeO, TiOj, WOj etc., and particularly electron microscopes with a point-to-point resolution of about 0.2 nm are widely used. The first direct observation of a point defect (actually a complex of two interstitial metal atoms, and two oxygen atoms in Nb,2029) was made" using electron microscopy. 

Jacobs et al. [59,925,926] (Fig. 17). While this scheme conveniently summarizes many features of the observed behaviour, a number of variations or modifications of the mechanisms indicated have been proposed. Maycock and Pai Vemeker [924,933] emphasize the possible role of point defects and suggest, on the evidence of conductivity measurements, that the initial step may be the transfer of either a proton or an electron. Boldyrev et al. [46] suggest that proton conduction permits rapid migration of HC104 within the reactant and this undergoes preferential decomposition in distorted regions. More recently, the ease of proton transfer and the mobilities of other species in or on AP crystals have been investigated by a.c. [360] and d.c. [934] conductivity measurements. Owen et al. [934] could detect no surface proton conductivity and concluded that electron transfer was the initial step in decomposition. At the present time, these inconsistencies remain unresolved. 

Point defects were mentioned in a prior chapter. We now need to determine how they aiffect the structure auid chemical reactivity of the solid state. We will begin by identifying the various defects which can arise in solids and later will show how they can be manipulated to obtain desirable properties not found in naturally formed solids. Since we have already defined solids as either homogeneous and heterogeneous, let us look first at the homogeneous t5 e of solid. We will first restrict our discussion to solids which are stoichiometric, and later will examine solids which can be classified as "non-stoichiometric", or having an excess of one or another of one of the building blocks of the solid. These occur in semi-conductors as well as other types of electronically or optically active solids. 

Cul) is not due to point defects but to partial occupation of crystallographic sites. The defective structure is sometimes called structural disorder to distinguish it from point defects. There are a large number of vacant sites for the cations to move into. Thus, ionic conductivity is enabled without use of aliovalent dopants. A common feature of both compounds is that they are composed of extremely polarizable ions. This means that the electron cloud surrounding the ions is easily distorted. This makes the passage of a cation past an anion easier. Due to their high ionic conductivity, silver and copper ion conductors can be used as solid electrolytes in solid-state batteries. 

The main scattering processes limiting the thermal conductivity are phonon-phonon (which is absent in the harmonic approximation), phonon defect, electron-phonon, electron impurity or point defects and more rare electron-electron. For both heat carriers, the thermal resistivity contributions due to the various scattering processes are additive. For... 

The potassium ions that are produced occupy cation lattice sites, but no anions are produced so electrons occupy anion sites. In this situation, the electron behaves as a particle restricted to motion in a three-dimensional box that can absorb energy as it is promoted to an excited state. It is interesting to note that the position of the maximum in the absorption band is below 4000A (400nm, 3.1 eV) for LiCl but it is at approximately 6000 A (600 nm, 2eV) for CsCl. One way to explain this observation is by noting that for a particle in a three-dimensional box the difference between energy levels increases as the size of the box becomes smaller, which is the situation in LiCl. Schottky, Frenkel, and F-center defects are not the only types of point defects known, but they are the most common and important types. 

It is known that hydrogen incorporated into Si subsequently exposed to ionizing radiation inhibits the formation of induced secondary point defect (Pearton and Tavendale, 1982a). For example, in both Si and Ge a number of electron or y irradiation induced defect states appear to be vacancy-related, and exposure of the Si or Ge to a hydrogen plasma (or implantation of hydrogen into the sample) prior to irradiation induces a degree of... 

The unique electronic properties of semiconductor devices arise at the regions where p-typc and ra-typc materials ate in close proximity, as in p-n junctions. Typical impurity levels ate about 0.0001 at %, and their inclusion and distribution need to be very strictly controlled during preparation. Without these deliberately introduced point defects, semiconductor devices of the type now commonly available would not be possible. 

These examples indicate that it is necessary to keep the possible effect of point defects on bulk and mechanical properties in mind. Although less definitive than electronic and optical properties, they may make the difference in the success or failure of device operation. 

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