Cross-sectional TEM

Fig, 1, (a) A cross-sectional TEM image of a bundle of buckytubes (b) an HREM image of a single bundle of bucky-lubes with their axes parallel to the bundle axis. 

Figure 12. Cross-sectional TEM images of a silica sample implanted with Ag and S (a) high-resolution image showing the lattice planes of the Ag2S shell (b) bright-field showing the contrast between the Ag core and the Ag2S shell (c) and (d) are the diffraction pattern of the sample sequentially implanted with S followed by Ag and with Ag followed by S, respectively. (Reprinted from Ref [1], 2005, with permission from Italian Physical Society.)...

The need to be able to thin complex microelectronic devices, and to select and thin specific regions within them has resulted in ever-more sophisticated specimen preparation methods involving precision ion polishing. This requirement culminated in the development of the focused ion beam (FIB) technique, which is able to slice out electron-transparent foils from any multilayer, multiphase material with extreme precision. Overwijk et al. (1993) have described such a technique for producing cross-section TEM specimens from (e.g.) integrated circuits. 

The resulting CuInTe2 films are crystalline and oriented (Fig. 3.10a,b). The fringes in the cross-sectional TEM image of the film, which run parallel to the... 

Figure 5.11 shows cross-sectional TEM images of the annealed polysilane films on poly-Si islands. After spin coating polysilane under the same condi-... 

Figure 5.11. Cross-sectional TEM images of annealed polysilane films, (a) Amorphous Si film baked in nitrogen, (b) Two-step baked Si02 film. [Reproduced with permission from Ref. 24. Copyright 2007 Society for Information Display.]...

The OLED is composed of hard and soft layers so that the conventional cross-sectional TEM sample preparation techniques cannot be applied. Figure 10.3 is a first DB microscopy-prepared TEM image of an OLED in cross-sectional view [37], The glass substrate, ITO, organic layers, and A1 cathode are indicated in the image. The microstructure and interfaces of all these layers can be well studied now. The nanometer-sized spots in organic layers are indium-rich particles. We believe the combination of DB microscopy and TEM will greatly advance the OLED research and development in the near future. 

L.A. Giannuzzi, J.L. Brown, S.R. Brown, R.B. Irwin, and F.A. Stevie, Focused ion beam milling and micromanipulation lift-out for site specific cross-sectional TEM specimen preparation, Mater. Res. Soc. Symp. Proc., 480 19-27, 1997. 

Fig. 6 Cross-sectional TEM image of a 10-rnn Co film deposited onto a 30-nm Alqa film. Taken Irom [35] with permission...

In 2008 Shin et al. used lETS and transmission electron microscopy (TEM) to characterize the chemical integrity and morphology of rubrene (C40H24) layers after deposition of an Fe top electrode [57]. The lETS spectra were consistent with the known IR- and Raman-active normal modes, which led the authors to conclude there were no chemical reactions with Fe. Cross-sectional TEM images showed continuous rubrene layers between the bottom Co layer and top Fe layer, with no evidence for small particle formation. Similar to the study by Santos et al., they found that the presence of an AI2O3 layer had a profound effect on the tunneling... 

Figure 4.8 Comparison between (a) disorder profiles and (b, c) dark field cross-section TEM images of the same samples. TEM image (b) refers to the sample with the higher disorder level at the damage peak, whereas TEM image (c) refers to the sample with the lower disorder level at the damage peak. The vertical dotted lines indicate the depth of outer boundaries of the high-contrast regions in the cross-sectional TEM images. (From [35]. 2003 American Institute of Physics. Reprinted with permission.)...

Figure 1. The SEM and microtomed TEM micrographs of the mesoporous materials obtained from C16TMAB-HN03-TE0S-H20 mixture at 32 °C, (A) without and (B) with the addition of PEO-6000 polymer. PEO repeating unit/C,6TMAB = 10. (C) Large-magnification SEM of the rope end of the sample in B (D) the cross section TEM micrographs of the silica rope in B.

As described by V.P. Dravid (Northwestern University) el al.. Transmission electron microscopy (TEM) observations of graphite tubules (buck-ytubes) and their derivatives have revealed not only the previously reported buckytube geometries but also additional shapes of the buckylube derivatives. Detailed cross-sectional TEM images reveal the cylindrical cross section of buckytubes and the growth pattern of buckytubes us well as... 

Cross-sectional TEM images of (a) a CrN-AIN multilayer (the AIN is the lighter phase) and (b) monolithic CrN. Note that there are long pores present in the monolithic CrN, marked by the black arrow, but these are not present in the multilayer. 

Figure 39. Cross-section TEM image of FePt C double-layered media (scale bar 20 nm).

The nanostructure of the double-layered nanocomposite FePt C thin film medium was characterized by TEM. Electron diffraction shows that the crystallites are FePt with the Ll0 structure. Figure 39 shows the bright-field and cross-section TEM image, which verifies that FePt crystallites are imbedded in C matrix and well isolated from each other. 

Fig. 8.17. (a) Cross-sectional TEM micrograph of an etched ZnO Al film covered with about 1 pm of a microcrystalline silicon p-i-n solar cell [119] (b) SEM image of an etched ZnO Al film showing cross-section and etched surface. The crater edge on the ZnO surface is indicated by a black line... 

FIGURE 1 Cross-sectional TEM image of GaN on c-plane sapphire (grown by MOCVD) taken near the [1100] zone with diffraction vector g-2g (g = 1120). Threading dislocations extend from a highly defective low temperature GaN buffer layer to the film surface. The density of threading dislocations is 1010 cm 2. The majority of dislocations are edge defects with b = <1120>. 

FIGURE 1 Cross-section TEM micrograph of nanopipes in a GaN film grown on sapphire (0001) by HVPE taken near the [1120] zone with g-3g, g = 0002. Voids are present along dislocations with Burgers vector b = [0001] (L.T. Romano et al [7]). 

FIGURE 1 Cross-sectional TEM images of AIN buffer layers grown on (a) on-axis and (b) vicinal 6H-SiC (0001) substrates. 

FIGURE 2 Cross-sectional TEM micrograph of a GaN thin film grown on a high temperature (1100°C) AIN buffer laycr/on-axis 6H-SiC (0001) substrate heterostructure. 

FIGURE 4 Cross-sectional TEM [1120] image taken from the area near the interface between the HVPE- and MOVPE-grown GaN layers with g = llOO. The ELO GaN layer was fabricated by HVPE on a Si02 <1120> stripe patterned on a GaN epilayer [25]. 

FIGURE 5 Cross-sectional TEM [1100] image of a MOVPE-grown GaN layer on a SiO stripe patterned on GaN/AIN buffer/6H-SiC [22],... 

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