Conductivity, band theory

It should be noted that a comprehensive ELNES study is possible only by comparing experimentally observed structures with those calculated [2.210-2.212]. This is an extra field of investigation and different procedures based on molecular orbital approaches [2.214—2.216], multiple-scattering theory [2.217, 2.218], or band structure calculations [2.219, 2.220] can be used to compute the densities of electronic states in the valence and conduction bands. 

The high electrical conductivity of metals as well as the high electron (and hole) mobility of inorganic covalently bound semiconductors have both been clarified by the band theory [I9, which slates that the discrele energy levels of individual atoms widen in the solid stale into alternatively allowed and forbidden bands. The... 

We see that the shortcomings of the quasi-chemical theory for dilute solutions also lead to the idea that the interaction between two atoms in solution may be very different from the interaction between the same atoms in the pure state. This is a point of view that can be reached from a consideration of the screening11 by localized or by conduction-band electrons that must occur about... 

In the DC-biased structures considered here, the dynamics are dominated by electronic states in the conduction band [1]. A simplified version of the theory assumes that the excitation occurs only at zone center. This reduces the problem to an n-level system (where n is approximately equal to the number of wells in the structure), which can be solved using conventional first-order perturbation theory and wave-packet methods. A more advanced version of the theory includes all of the hole states and electron states subsumed by the bandwidth of the excitation laser, as well as the perpendicular k states. In this case, a density-matrix picture must be used, which requires a solution of the time-dependent Liouville equation. Substituting the Hamiltonian into the Liouville equation leads to a modified version of the optical Bloch equations [13,15]. These equations can be solved readily, if the k states are not coupled (i.e., in the absence of Coulomb interactions). 

The SCF method for molecules has been extended into the Crystal Orbital (CO) method for systems with ID- or 3D- translational periodicityiMi). The CO method is in fact the band theory method of solid state theory applied in the spirit of molecular orbital methods. It is used to obtain the band structure as a means to explain the conductivity in these materials, and we have done so in our study of polyacetylene. There are however some difficulties associated with the use of the CO method to describe impurities or defects in polymers. The periodicity assumed in the CO formalism implies that impurities have the same periodicity. Thus the unit cell on which the translational periodicity is applied must be chosen carefully in such a way that the repeating impurities do not interact. In general this requirement implies that the unit cell be very large, a feature which results in extremely demanding computations and thus hinders the use of the CO method for the study of impurities. 

Therefore, there could exist rich defects in Ba3BP30i2, BaBPOs and Ba3BP07 powders. From the point of energy-band theory, these defects will create defect energy levels in the band gap. It can be suggested that the electrons and holes introduced by X-ray excitation in the host might be mobile and lead to transitions within the conduction band, acceptor levels, donor levels and valence band. Consequently, some X-ray-excited luminescence bands may come into being. 

The reciprocal lattice is useful in defining some of the electronic properties of solids. That is, when we have a semi-conductor (or even a conductor like a metal), we find that the electrons are confined in a band, defined by the reciprocal lattice. This has important effects upon the conductivity of any solid and is known as the "band theory" of solids. It turns out that the reciprocal lattice is also the site of the Brillouin zones, i.e.- the "allowed" electron energy bands in the solid. How this originates is explciined as follows. 

We should point out that up to now we have considered only polycrystals characterized by an a priori surface area depleted in principal charge carriers. For instance, chemisorption of acceptor particles which is accompanied by transition-free electrons from conductivity band to adsorption induced SS is described in this case in terms of the theory of depleted layer [31]. This model is applicable fairly well to describe properties of zinc oxide which is oxidized in air and is characterized by the content of surface adjacent layers which is close to the stoichiometric one [30]. 

With the absorption of a quantum with an energy of more than 3.05 eV resp. 3.29 eV, an electron is lifted out of the valence band and into the conduction band, thereby forming an exciton (Fig. 5). This interpretation is also supported by the molecular orbital theory and the crystal field theory regarding the bonding conditions in the TiC lattice. 

According to the electronic theory, a particle chemisorbed on the surface of a semiconductor has a definite affinity for a free electron or, depending on its nature, for a free hole in the lattice. In the first case the chemisorbed particle is presented in the energy spectrum of the lattice as an acceptor and in the second as a donor surface local level situated in the forbidden zone between the valency band and the conduction band. In the general case, one and the same particle may possess an affinity both for an electron and a hole. In this case two alternative local levels, an acceptor and a donor, will correspond to it. 

The nature of light absorption in a crystal is of no significance for theory. What is important here is that this absorption be photoelectrically active, i.e., results in a change of the concentration of free carriers in a crystal. This process may take the form either of the so-called intrinsic absorption accompanied by the transition of an electron from the valency to the conduction band, or of the so-called impurity absorption caused by an electronic transition between the energy band and the impurity local level. 

Chemical bonds are defined by their frontier orbitals. That is, by the highest molecular orbital that is occupied by electrons (HOMO), and the lowest unoccupied molecular orbital (LUMO). These are analogous with the top of the valence band and the bottom of the conduction band in electron band theory. However, since kinks are localized and non-periodic, band theory is not appropriate for this discussion. 

The Schottky-Mott theory predicts a current / = (4 7t e m kB2/h3) T2 exp (—e A/kB 7) exp (e n V/kB T)— 1], where e is the electronic charge, m is the effective mass of the carrier, kB is Boltzmann s constant, T is the absolute temperature, n is a filling factor, A is the Schottky barrier height (see Fig. 1), and V is the applied voltage [31]. In Schottky-Mott theory, A should be the difference between the Fermi level of the metal and the conduction band minimum (for an n-type semiconductor-to-metal interface) or the valence band maximum (for a p-type semiconductor-metal interface) [32, 33]. Certain experimentally observed variations of A were for decades ascribed to pinning of states, but can now be attributed to local inhomogeneities of the interface, so the Schottky-Mott theory is secure. The opposite of a Schottky barrier is an ohmic contact, where there is only an added electrical resistance at the junction, typically between two metals. 

It is important to realize that each of the electronic-structure methods discussed above displays certain shortcomings in reproducing the correct band structure of the host crystal and consequently the positions of defect levels. Hartree-Fock methods severely overestimate the semiconductor band gap, sometimes by several electron volts (Estreicher, 1988). In semi-empirical methods, the situation is usually even worse, and the band structure may not be reliably represented (Deak and Snyder, 1987 Besson et al., 1988). Density-functional theory, on the other hand, provides a quite accurate description of the band structure, except for an underestimation of the band gap (by up to 50%). Indeed, density-functional theory predicts conduction bands and hence conduction-band-derived energy levels to be too low. This problem has been studied in great detail, and its origins are well understood (see, e.g., Hybertsen and Louie, 1986). To solve it, however, requires techniques of many-body theory and carrying out a quasi-particle calculation. Such calculational schemes are presently prohibitively complex and too computationally demanding to apply to defect calculations. 

The differentiation between whether delocalized (band theory) conductivity or diffusionlike hopping conductivity best explains experimental conductivity results is not always easy in practice but can be made by a comparison of the theoretical expressions for electrical conductivity and mobility of the charge carriers in a solid. 

For a metal that obeys band theory well, and conducts by electrons, the conductivity can be written ... 

In the case of elemental semiconductors such as Si, which are also well described in band theory terms, the equation for the conductivity is composed of an electron and hole component so that ... 

A hopping semiconductor such as an oxide is often best described by Eq. (7.1) rather than by classical band theory. In these materials the conductivity increases with temperature because of the exponential term, which is due to an increase in the successful number of jumps, that is, the mobility, as the temperature rises. Moreover, the concentration of charge carriers increases as the degree of nonstoichiometry increases. 

A comparison of the relevant equations for metals, band theory semiconductors, and hopping semiconductors is given in Table 7.1. These equations can be used in a diagnostic fashion to separate one material type from another. In practice, it is not quite so easy to distinguish between the different conductivity mechanisms. 

In band theory the electrons responsible for conduction are not linked to any particular atom. They can move easily throughout the crystal and are said to be free or very nearly so. The wave functions of these electrons are considered to extend throughout the whole of the crystal and are delocalized. The outer electrons in a solid, that is, the electrons that are of greatest importance from the point of view of both chemical and electronic properties, occupy bands of allowed energies. Between these bands are regions that cannot be occupied, called band gaps. 

Note that the above model is for a simple system in which there is only one defect and one type of mobile charge carrier. In semiconductors both holes and electrons contribute to the conductivity. In materials where this analysis applies, both holes and electrons contribute to the value of the Seebeck coefficient. If there are equal numbers of mobile electrons and holes, the value of the Seebeck coefficient will be zero (or close to it). Derivation of formulas for the Seebeck coefficient for band theory semiconductors such as Si and Ge, or metals, takes us beyond the scope of this book. 

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