Composite semiconductor—dielectric composites

The other feature that emerges from the experimental data is the functional dependence of the observed o x) that is manifested in particular by the conductivity exponent t. Having the framework given in Sections 5.2-S.4, we can understand the various observed values of t as follows. In the cases where the onset of percolation is associated with the coalescence of particles (as in granular metals [42]) or coalescence-like (as in semiconductor-dielectric composites [41] shown in Figure 5.6), the values of t [35, 39, 40, 42, 59] are, within the experimental uncertainty, very close to the classical critical values of 1.7 < t < 2 that were derived from calculations or computations [1, 3, 15]. This observation is well understood by following two considerations. Either, as suggested above, we approach the S Z picture, or we can virtually divide the continuous phase network into small elements (say, spheres or... 

Metal deposition processes, early,. 9 760-761. See also Electroless deposition Metal deposition systems, in compound semiconductor processing, 22 188-189 Metal-dielectric composite-metal tandem solar absorbing surface, 23 11 Metal dithionates, 23 677-678 uses for, 23 677-678... 

The most important aspect of this project was the time line. In mid-1996 the specific polymer composition was selected, and in April 1997 Dow publicly announced what became known as SiLK Semiconductor Dielectric. In April 2000, IBM reported the complete integration of the SiLK dielectric and copper wiring and announced its intent to commercially fabricate integrated circuits using SiLK resin. 

One frequently examined interface is the solid-liquid interface, where the solid phase may be a dielectric, a semiconductor, or a metal. Species located at these interfaces are of primary importance in electtochemisny and in chemistry of surface-active substances (surfactants). Another common type of interface is the solid-solid interface, specifically dielectric-dielectric, dielectric-semiconductor, dielectric-metal, semiconductor-semiconductor, semiconductor-metal, and metal-metal interfaces. These structures have an extremely important role in such areas as microelectronics and the chemistry of composites. Furthermore, positioning an ultrathin film at the interface of two media, one can substantially increase surface sensitivity of all IR spectroscopic methods. 

High-temperature lubricant 4. Light-load plain bearings operating under conditions of strong corrosive action by acid solutions 5. In the composition of dielectrics 6. In the composition of high-temperature semiconductor materials [1041] [1042] 1961 1962... 

Chapter 10 deals with composite films synthesized by the physical vapor deposition method. These films consist of dielectric matrix containing metal or semiconductor (M/SC) nanoparticles. The film structure is considered and discussed in relation to the mechanism of their formation. Some models of nucleation and growth of M/SC nanoparticles in dielectric matrix are presented. The properties of films including dark and photo-induced conductivity, conductometric sensor properties, dielectric characteristics, and catalytic activity as well as their dependence on film structure are discussed. There is special focus on the physical and chemical effects caused by the interaction of M/SC nanoparticles with the environment and charge transfer between nanoparticles in the matrix. 

Vapor Deposited Composite Films Consisting of Dielectric Matrix with Metal/Semiconductor Nanoparticles... 

The composite films containing metal or semiconductor (M/SC) nanoparticles in various dielectric matrices, draw much attention in connection with fundamental scientific problems and technological applications [1-3]. Specific properties of such films are determined by both individual characteristics of immobilized nanoparticles and interaction of particles with a matrix. Moreover, the new important effects caused by interaction between M/SC nanoparticles appear in composite films at the high M/SC contents [2,3]. 

For metal, dielectric and semiconductor films fabrication, optical and silica glass are popular substrate materials because of their availability, cost-effectiveness, and inert character, i.e., they are stable in the required temperature range for common photonic, optoelectronic and photovoltaic applications, they do not chemically react with the prepared films, and the hard plane surface makes the formation of optically smooth thin films fairly easy. Generally, it is preferable to form films by a simple, low-temperature, inexpensive and environment friendly method. Sol-gel technique and thermal evaporation is found suitable for the preparation of film parts of efficient solar cells [1], emitters, transformers [2], detectors and modulators of light [3], as well as optically stimulated luminescence dosimeters [4]. Here, we present the experimental data on the resistance to high-power optical and ionizing irradiations of the undoped components of film compositions with nanociystais. 

Technically useful properties of such perovskite ceramics are their high permittivities (relative dielectric constants), the semiconductor properties of certain chemical compositions and their piezoelectric properties. 

Poly(imide)s as a class of polymer exhibit a range of properties, such as high Tg, excellent thermal stability, high chemical resistance, low dielectric constant and ease of fabrication, which have lead to important uses in the semiconductor and advance composite industries. In addition, the high aromatic content of many of these polymers and consequent high stability to ionizing radiation, leads to usage of poly(imide) films and composites in the nuclear and aerospace industries. 

---