Silicon chemical vapor deposition

Narushima, T., Goto, T., Iguchi, Y., Hirai, T., (1991), High-temperature active oxidation of chemically vapor-deposited silicon carbide in an Ar-02 atmosphere , J. Am. Ceram. Soc., 74, 2583-2586. 

Passivation is needed to insulate the backplane from the OLED stacks everywhere except the ITO and bonding contact areas. Unlike poly-Si and a-Si H backplanes, on which both organic and inorganic passivation layers can easily work, the device passivation technique needs extra consideration for pentacene TFTs. We explored several different materials for passivation of pentacene TFTs, including poly(vinyl alcohol) (PVA), room temperature plasma-enhanced chemical vapor deposition silicon nitride (RT PECVD SiN), and vapor-deposited parylene. 

Holzapfel M, Buqa H, Krumeich F, Novak P, Petrat FM, Veit C. Chemical vapor deposited silicon/ graphite compound materials as negative electrode for lithium-ion batteries. Electrochem Solid-State Lett 2005 8 A516-A520. 

Recent converter hardware development has concentrated on flame heated devices for terrestrial topping cycle applications. Significant progress has been made with chemical vapor deposited silicon carbide as the oxidation protection hot shell. Flame heated converters have now been operated by Thermo Electron Corporation with emitter temperatures over 1700 K for 7000+ hours ( ). 

Niihara K, Hirai T (1976) Chemical vapor-deposited silicon nitride, Part 1 Preparation and some properties. J Mater Sci 11 593-603... 

The tensile fracture strengths of three different structural ceramics are listed below hot-pressed silicon nitride (HPSN), reaction-bonded silicon nitride (RBSN), and chemical vapor-deposited silicon carbide (CVDSC), measured at room temperature. 

Surface moisture is a problem of concern in ceramic powders, and IR has been used to characterize the surface groups of -OH and -H [58,63,64]. IR was also applied to characterize chemically bound hydrogen in chemical vapor-deposited silicon nitride at various ammonia-silane ratios [65]. Surface silicon dioxide on SiC powders was determined by photoacoustic IR and diffuse reflectance IR spectroscopy [66,67]. IR spectroscopy was also used to study the surface oxidation of SiC and SisN4 [68,69]. 

ELID Grinding of Chemical Vapor Deposited Silicon... 

ELID grinding of chemical vapor deposited silicon carbide (CVD-SiC) (Zhang et al., 2001a)... 

Chemical vapor deposited silicon carbide (CVD-SiC) is the second most ideal material for deflection mirrors used in short wavelength laser system, next only to crystalline diamond. Conventional polishing techniques were found insufficient to produce CVD-SiC mirrors. The conclusions drawn in this study are as follows ... 

E. J. Opila, Oxidation Kinetics of Chemically Vapor Deposited Silicon Carbide in Wet Oxygen, i Am. Ceram. Soc., 77(3), 730-736 (1994),... 

Holzapfel M et al (2005) Chemical vapor deposited silicon/giapliite ctnnpound material as negative electrode for Uthium-ion batteries. Electiochtan Solid-State Lett 8 A516-A520... 

Kim, W.-J., et al.. Corrosion behaviors of sintered and chemically vapor deposited silicon carbide ceramics in water at 360°C. Journal of Materials Science Letters, 2003.22 p. 581-584. 

Stuart F, Edell D, Guzelian A, Liu Y, EdeU R (2003) Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating. J Biomed Mater Res A 67 856. 

T. Narusima, T. Goto and T. Hirai, High-Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide,/. Am. Ceram. Soc., 72, 1386-90 (1989). 

Oxidation behavior of chemical vapor deposited silicon carbide... 

Goto T, High-temperature oxidation behavior of chemical vapor deposited silicon carbide , J Ceram Socjpn, 2002 110(10) 884-889. 

Choi D J, Fischback D B, Scott W D, Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon , J Am Ceram Soc, 1989 72(7) 1118-1123. 

Schiroky G H, Oxidation behavior of chemically vapor-deposited silicon carbide , Adv Ceram Mater, 1987 2(2) 137-141. 

Narushima T, Goto T, Yokoyama Y, Takeuchi Y, IguchiY, Hirai T, Active-to-passive transition and bubble formation for high-temperature oxidation of chemically vapor-deposited silicon carbide in CO-CO2 atmosphere , J Am Ceram Soc, 1994 77(4) 1079-1082. 

Danielsson, O. Henry, A. and Janzen, E. Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers J. Cryst. Growth 243 (2002) 170-184. 

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