Oxidation behavior of chemical vapor deposited silicon carbide

Oxidation behavior of chemical vapor deposited silicon carbide 

Oxidation is a crucial issue for the degradation of SiC bodies, particularly at high temperatures. The oxidation behavior of SiC can be primarily categorized into three types passive oxidation characterized by excellent oxidation resistance due to protective oxide layers, active oxidation accompanied by a significant mass loss due to the formation of SiO and CO vapors, and bubble formation caused by the high pressures of SiO and CO vapors at the Si02/SiC interface.  

Passive oxidation has been studied using many forms of SiC, including powders, pressure-less and hot-pressed sintered bodies, pure CVD and single crystals. Since passive oxidation behavior is significantly sensitive to impurities and the microstmcture, highly pure and dense SiC bodies with well-defined microstructures should be employed to understand the intrinsic oxidation mechanisna. Many studies have been conducted for highly pure CVD and 

2 Synthesis of chemical vapor deposited (CVD) silicon carbide (SiC) thick plates 

1 Cold-wall type CVD set-up (1) water-cooled vacuum chamber (2), (7) quartz glass windows (3), (4) gas inlets (5) pressure gauge (6) water-cooled copper electrode (8) graphite heater (substrate) (9) graphite socket (10), (11) gas outlets. 

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Goto T, High-temperature oxidation behavior of chemical vapor deposited silicon carbide , J Ceram Socjpn, 2002 110(10) 884-889. 

Schiroky G H, Oxidation behavior of chemically vapor-deposited silicon carbide , Adv Ceram Mater, 1987 2(2) 137-141. 

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