Chemical mechanical planarization copper

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. 

Wrschka P, Hernandez J, Oehrlein G. Chemical mechanical planarization of copper damascene structures. J Electrochem Soc 2000 147(2) 706-712. 

Thakurta DG, Schwendeman DW, Gutmann RJ, Shankar S, Jiang L, Gill WN. Three-dimensional wafer-scale copper chemical-mechanical planarization model. Thin Solid Films 2002 414(l) 78-90. 

Ein-Eli Y, Abelev E, Starosvetsky D. Electrochemical aspects of copper chemical mechanical planarization(CMP) in peroxide based slurries containing BTA and glycine. Electrochem Acta 2004 49 1499-1503. 

Gorantla VRK, Matijevic E, Babu SV. Amino acids as complexing agents in chemical-mechanical planarization of copper. Chem Mat 2005 17 2076-2080. 

Patri UB. Role of slurry chemicals in chemical mechanical planarization of copper [dissertation]. Potsdam (NY) Clarkson University 2005. 

Hernandez J, Wrschka P, Oehrlein GS. Surface chemistry studies of copper chemical mechanical planarization. J Electrochem Soc 2001 148(7) G389-G397. 

Tamilmani S, Huang W, Raghavan S. Potential-pH diagrams of interest to chemical mechanical planarization of copper. J Electrochem Soc 2002 12 G638-G642. 

Ramarajan S, Li Y, Hariharaputhiran M, Babu SV, Her YS. The role of alumina particle density in chemical mechanical planarization of copper, tantalum, and tungsten disks and films. J CMP On-Chip Interconnect IMIC 2000 l(l) 28-38. 

Deshpande S, Kuiry SC, Klimov M, Obeng Y, Seal S. Chemical mechanical planarization of copper role of oxidants and inhibitors. J Electrochem Soc 2004 151 G788. 

Du T, Luo Y, Desai V. The combinatorial effect of complexing agent and inhibitor on chemical-mechanical planarization of copper. Microelectron Eng 2004 71(l) 90-97. 

Hong Y, Patri UB, Ramakrishnan S, Roy D, Babu SV. Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical-mechanical planarization of copper. J Mater Res Soc 2005 20(12) 3413. 

Govindaswamy S, Cheemalapati K, Li Y. Evaluation of Surfactant as Corrosion Inhibitor in Copper Chemical Mechanical Planarization. Unpublished results 2007. 

Govindaswamy S, Li Y. Investigation of 5-pheny-l-H-tetrazole as corrosion inhibitor in chemical mechanical planarization of copper film. Unpublished results 2007. 

This chapter gives an overview of the defects that can be generated or revealed during chemical-mechanical planarization (CMP). Most defects are specific to the type of CMP operation the wafer has just experienced. For this and other obvious reasons, this chapter is organized by CMP applications. However, there are some families of defects that are common to most CMP processes. Indeed, scratches [1-5], remaining particles [6], and surface residues [7] could be found in all CMP applications. Therefore, the materials are presented in the order of complexity, from the simplest such as oxide CMP to the most sophisticated such as copper CMP. Almost all defects presented in oxide CMP could exist in the other applications such as poly-Si, W CMP, and Cu CMP. 

A new method was developed using a modified polishing device for measuring galvanic corrosion during chemical mechanical planarization (CMP) of copper and tantalum [22]. CMP is used to pofish on a microscopic scale. In most cases, this is done using a colloidal slurry of abrasive microscopic particles. 

Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond... 

Li, J., Chai, Z., Liu, Y., et al., 2013a. Tribo-chemical behavior of copper in chemical mechanical planarization. Tribology Lett. 50, 177—184. 

Thakurta, D.G., Schwendeman, D.W., Gutmann, R.J., et al., 2002. Three-dimensional wafer-scale copper chemical—mechanical planarization model. Thin Solid Films 414, 78—90. 

Zheng, J.P., Roy, D., 2009. Electrochemical examination of surface films formed during chemical mechanical planarization of copper in acetic acid and dodecyl sulfate solutions. Thin Solid Films 517, 4587—4592. 

T. Hara, T. Kurosu, T. Doy, Chemical mechanical planarization of copper and barrier layers by manganese (IV) oxide slurry, Electrochem. Solid-State Lett. 4 (2001) G109—G 111. 

S. Pandija, D. Roy, S.V. Babu, Chemical mechanical planarization of copper using abrasive-free solutions of oxalic acid and hydrogen peroxide, Mater. Chem. Phys. 102 (2007) 144-151. 

Lee, H., Joo, S., Jeong, H., 2009. Mechanical effect of colloidal silica in copper chemical mechanical planarization. J. Mater. Process. Technol. 209, 6134—6139. 

H. Lee, B. Park, J. Haedo, Influence of slurry components on uniformity in copper chemical mechanical planarization, Micioelectron. Eng. 85 (4) (2008) 689. 

L. Borucki, H. Lee, Y. Zhuang, N. Nikita, R. Kikuma, A. Philipossian, Theoretical and experimental investigation of conditioner design factors on tribology and removal rate in copper chemical mechanical planarization, Jpn. J. Appl. Phys. 48 (2009) 115502. 

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