Ceramic dielectric constants

By variation of ceramic volume fraction and selection of the best fitting PZT material we can as well adjust the dielectric constant of the piezocomposite within a wide range. Therefore, we can choose the best piezocomposite material for each probe type to get optimum pulse form and amplitude. 

Fig. 8. Dielectric constant (1 kHz) vs temperature for BaTiO ceramics of A, l-)Tm grain size, and B, 50-)Tm grain size.

Most glass-ceramics have low dielectric constants, typically 6—7 at 1 MHz and 20°C. Glass-ceramics comprised primarily of network formers can have dielectric constants as low as 4, with even lower values (K < 3) possible in microporous glass-ceramics (13). On the other hand, very high dielectric constants (over 1000) can be obtained from relatively depolymerized glasses with crystals of high dielectric constant, such as lead or alkaline earth titanate (11,14). 

Perovskites have the chemical formula ABO, where A is an 8- to 12-coordinated cation such as an alkaU or alkaline earth, and B is a small, octahedraHy coordinated high valence metal such as Ti, Zr, Nb, or Ta. Glass-ceramics based on perovskite crystals ate characteri2ed by their unusual dielectric and electrooptic properties. Examples include highly crystalline niobate glass-ceramics which exhibit nonlinear optical properties (12), as well as titanate and niobate glass-ceramics with very high dielectric constants (11,14). 

Heat treatment of related glasses melted under reducing conditions can yield a unique microfoamed material, or "gas-ceramic" (29). These materials consist of a matrix of BPO glass-ceramic filled with uniformly dispersed 1—10 p.m hydrogen-filled bubbles. The hydrogen evolves on ceranarning, most likely due to a redox reaction involving phosphite and hydroxyl ions. These materials can have densities as low as 0.5 g/cm and dielectric constants as low as 2. 

Alumina, or aluminum oxide [1344-28-17, has a thermal conductivity 20 times higher than that of most oxides (5). The flexural strength of commercial high alumina ceramics is two to four times greater than those of most oxide ceramics. The drawbacks of alumina ceramics are their relatively high thermal expansion compared to the chip material (siUcon) and their moderately high dielectric constant. 

Although beryllium oxide [1304-56-9] is in many ways superior to most commonly used alumina-based ceramics, the principal drawback of beryUia-based ceramics is their toxicity thus they should be handled with care. The thermal conductivity of beryUia is roughly about 10 times that of commonly used alumina-based materials (5). BeryUia [1304-56-9] has a lower dielectric constant, a lower coefficient of thermal expansion, and slightly less strength than alumina. Aluminum nitride materials have begun to appear as alternatives to beryUia. Aluminum nitride [24304-00-5] has a thermal conductivity comparable to that of beryUia, but deteriorates less with temperature the thermal conductivity of aluminum nitride can, theoreticaUy, be raised to over 300 W/(m-K) (6). The dielectric constant of aluminum nitride is comparable to that of alumina, but the coefficient of thermal expansion is lower. 

Other. Insoluble alkaline-earth metal and heavy metal stannates are prepared by the metathetic reaction of a soluble salt of the metal with a soluble alkah—metal stannate. They are used as additives to ceramic dielectric bodies (32). The use of bismuth stannate [12777-45-6] Bi2(Sn02)3 5H20, with barium titanate produces a ceramic capacitor body of uniform dielectric constant over a substantial temperature range (33). Ceramic and dielectric properties of individual stannates are given in Reference 34. Other typical commercially available stannates are barium stannate [12009-18-6] BaSnO calcium stannate [12013 6-6] CaSnO magnesium stannate [12032-29-0], MgSnO and strontium stannate [12143-34-9], SrSnO. ... 

Barium titanate has widespread use ia the electronics iadustry. Its high dielectric constant and the ease with which its electrical properties can be modified by combination with other materials make it exceptionally suitable for a variety of items, ie, miniature capacitors (see Ceramics as electrical materials). 

The observed dielectric constant M and the dielectric loss factor k = k tan S are defined by the charge displacement characteristics of the ceramic ie, the movement of charged species within the material in response to the appHed electric field. Discussion of polarization mechanisms is available (1). 

There is also growing iaterest ia thin-film dielectric capacitors. For example, through the use of processiag techniques such as sol—gel solution deposition, thin (--- 0.25 fim) ceramic layers having dielectric constants ranging from 500 to 2000 ia the PZT, Pb(Zr,Ti)03, and PMN—PT, Pb(Mn2 3Nb2 3)03-PbTi03, compositional families respectively, have been prepared (3). 

Dielectric Constant The dielectric constant of material represents its ability to reduce the electric force between two charges separated in space. This propei ty is useful in process control for polymers, ceramic materials, and semiconduc tors. Dielectric constants are measured with respect to vacuum (1.0) typical values range from 2 (benzene) to 33 (methanol) to 80 (water). TEe value for water is higher than for most plastics. A measuring cell is made of glass or some other insulating material and is usually doughnut-shaped, with the cylinders coated with metal, which constitute the plates of the capacitor. 

Power supply designers are usually aware that the most stable ceramic capacitance comes from materials dubbed COG material, also called NPO (for negative positive zero, referring to its near perfect temperature coefficient). But this is a low dielectric constant material, and unsuitable for modern miniaturization. So the common materials in use today are called X7R, X5R, and so on. There are others, starting with a Y or Z prefix, which no power supply designer worth his or her salt will ever use. 

The copyrolysis of 1 wt% dibromotetrafluoro-p-xylylene with commercially available hexafluoro-p-xylene (Aldrich) with metals was examined and it was found that it was indeed possible to prepare films that were spectroscopically indistinguishable from those deposited from dimer. The PA-F films obtained are of excellent quality, having dielectric constants of2.2-2.3 at 1 MHz and dissociation temperatures up to 530°C in N2. A uniformity of better than 10% can be routinely achieved with a 0.5-gm-thick film on a 5-in. silicon wafer with no measurable impurities as determined by XPS. During a typical deposition, the precursor was maintained at 50°C, the reaction zone (a ceramic tube packed with Cu or Ni) was kept at 375-550°C, and the substrate was cooled to -10 to -20°C. The deposited film had an atomic composition, C F 0 = 66 33 1 3 as determined by XPS. Except for 0, no impurities were detected. Within instrumental error, the film is stoichiometric. Poly(tetrafluoro-p-xylylene) has a theoretical composition ofC F = 2 1. Figure 18.2 illustrates the XPS ofthe binding energy... 

For ceramic capacitors there is a continuous decrease of capacitance with time. The higher the dielectric constant, the higher is this decrease. In metal film capacitors the best values given for 63 V capacitors are changes of 0.5% in 2 years. The SIKO shows the same long-term stability of the capacitance as the trench capacitors in DRAMs. 

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