Bulk optical constants, applicability

Infrared ellipsometry is typically performed in the mid-infrared range of 400 to 5000 cm , but also in the near- and far-infrared. The resonances of molecular vibrations or phonons in the solid state generate typical features in the tanT and A spectra in the form of relative minima or maxima and dispersion-like structures. For the isotropic bulk calculation of optical constants - refractive index n and extinction coefficient k - is straightforward. For all other applications (thin films and anisotropic materials) iteration procedures are used. In ellipsometry only angles are measured. The results are also absolute values, obtained without the use of a standard. 

The preconditions for the use of polymer liquid crystals in display applications are that they exhibit bulk optical properties dependent on the molecular orientation in the mesophase and that this orientation may be altered on application of an external field. In this chapter we shall be concerned with electric or optical fields only. The particular optical property, i.e. (a) the birefringence, (b) the dichroism or (c) the scattering power, defines the display construction in terms of the use of polarized (a and b) or non-polarized (b and c) light, whereas the ability to switch from one orientation to another depends on the anisotropic electric permittivity and the orientational elastic constants. The dynamics of the induced orientation will depend, additionally, on the viscosity constants of the material. 

In the previous sections, we have seen how computer simulations have contributed to our understanding of the microscopic structure of liquid crystals. By applying periodic boundary conditions preferably at constant pressure, a bulk fluid can be simulated free from any surface interactions. However, the surface properties of liquid crystals are significant in technological applications such as electro-optic displays. Liquid crystals also show a number of interesting features at surfaces which are not seen in the bulk phase and are of fundamental interest. In this final section, we describe recent simulations designed to study the interfacial properties of liquid crystals at various types of interface. First, however, it is appropriate to introduce some necessary terminology. 

II-VI semiconductor layers and bulk semiconductors like Si, GaAs, InP, etc. In particular, quantum wells are formed by thin epitaxial multilayered structures like (Zn, Cd)Se/ZnS. Nevertheless, the choice between bulk semiconductors and the layers deposited or between the multilayers is governed by the lattice mismatch between the two components as the lattice mismatch causes the formation of misfit dislocations. In the optical devices these defects are potential non-radiative centres and at worst they can cause the failure of injection lasers. Figure 29 is a map of energy gap versus lattice constants for a variety of semiconductors it can be used to select different heterostructures, not only for optoelectronics applications but also for photovoltaic cells. In the latter application the deposited films are generally polycrystalline and the growth of high-quality epitaxial layers has received little applications. 

Thus, if the wavelength of the light is much greater than the grain size, the long wavelength approximation and effective medium theory can be applied to determine the effective value of the composite dielectric constant and, consequently, describe composites optical properties. However, if the size of the structure is of the order of tens and even units of nanometers, then the effective medium approach is not applicable. Indeed, within this approximation, the effective permittivity of a composite is determined as a function of the permittivity for each composite component and, in turn, the nanocomposite components are characterized by the same tensor of permittivity as those used for bulk media. ... 

The < 33 strain constant may be determined on bulk samples through converse piezoelectric measurements. As noted earlier, the strain constant is expressed in units of mA that are equivalent to C/N. Converse piezoelectric measurements are more experimentally difficult compared with the direct measurements, but provide greater accuracy. The converse measurements use an optical technique in order to measure the small strains in the sample caused by the application of a voltage. The experimental system is composed of a high voltage amplifier and interface as well as an optical... 

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