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Contacts blocking

Returning to the depletion discharge, it should be stressed that with thick films and a good blocking contact between a-Se and the preoxidized aluminum substrate, the depletion discharge process dominates. There are several reasons that amorphous selenium possesses good dark decay characteristics ... [Pg.91]

With relatively thick films (L = 10-50 pm) and a good blocking contact between a-Se-based films and the preoxidized A1 substrate, the latter phenomenon dominates. [Pg.107]

The existence of Ohmic and blocking contacts have a great influence on the properties of a photoconductor 41,45,46). [Pg.91]

The situation is more complicated in photoconductors with Ohmic and blocking contacts and different types of carriers. However, with the aid of the concepts discussed above, the photoconductive behavior of such systems may also be understood. [Pg.94]

Pixley FLA, De La Cadena R, Rage J D, et al. The contact system contributes to hypotension but not disseminated intravascular coagulation in lethal bacteremia in vivo use of a monoclonal anti-factor XII antibody to block contact activation in baboons. J Clin Invest 1993 92 61-68. [Pg.28]

On the other hand the measured current upon irradiation by the same source would be different if the solid has blocking contacts. Perfect blocking contacts are defined as those that permit the photogenerated carriers to drift out of the solid under the influence of the electric field but do not allow any charge to be injected into the solid. The current under these conditions is given by2. ... [Pg.4]

The tacit assumption here is that the recombination time r between oppositely charged carriers is larger than the transit time Tt of the carriers so that the measured current is equal to the rate at which carriers are being produced (multiplied by e to convert the photon current into electrical current). Any electric field dependence of this current then reflects the electric field dependence of the QE of photogeneration. However, in the presence of substantial carrier recombination (r < Tt) the current with blocking contacts is... [Pg.4]

However, preparing a blocking contact in superstrate structure has been difficult. Only small area cells have been demonstrated so far and even those show limited performance (Table 9.2). To achieve optimum properties, the absorber layer must be prepared at temperatures of about 500°C, which implies that interdiffusion is significant and may lead to a deterioration of junction and absorber bulk properties. It is interesting to note that approaches not using buffer layers have resulted in higher efficiency than those using CdS buffers prepared by various methods. [Pg.432]

To avoid these problems, other types of blocking contacts have been proposed (Oda et al., 1981, Hatanaka et al., 1982 Ishioka et al., 1983). In these cases, a wide-gap transparent thin film such as SiOz or Si N,., is used as a hole-blocking layer in place of the n layer. A chalcogenide, such as Sb2S3 or As2Se1.5TeI.5, or an oxide such as Ce02 thin film, is then used instead of the p layer. [Pg.81]

Fig. 6. The current-voltage characteristics of a-Si H blocking contact structure target. Fig. 6. The current-voltage characteristics of a-Si H blocking contact structure target.
An a-Si H photosensor array has been successively applied to a long linear image sensor and high-performance area image sensor. A photodiode in which a-Si H is sandwiched between ITO and metal electrodes is used because of its short photoresponse time. In this structure, blocking contacts at both electrodes are necessary to prevent carrier injection from the electrodes. [Pg.139]

Because both carriers, electrons and holes, can be mobile in a-Si H, blocking contacts for both electrodes are needed to prevent carrier injection from the electrodes. In this case the photocurrent is a primary current that saturates with unity collection efficiency when ptxE > d, where n is the mobility of the photocarriers that drift in a-Si H, r the lifetime of photocarriers, E is the electric field in a-Si H, and d the thickness of a-Si H. In the saturation photocurrent region, the photocurrent is not very dependent on a-Si H film quality and increases linearly with increasing light intensity. [Pg.144]

In organic cells, however, the steps involved in the generation of photo-current are (1) light absorption, (2) exciton creation, (3) exciton diffusion, (4) exciton dissociation in the bulk or at the surface, (5) field-assisted carrier separation, (6) carrier transport, and (7) carrier delivery to external circuit. Assuming that only the excitons which reach the junction interface produce free carriers, if the blocking contact is illuminated [65],... [Pg.813]

To improve the agreement between model and experiment, several enhancements to the model are possible. This model can be extended to include less idealized injecting Al-PI contacts, and Au-PI contacts can be simulated as blocking contacts. Also, a more detailed picture of the distribution of electronic states can be employed. [Pg.188]

Blocking contact Ohmic for electrons in contact conduction band... [Pg.582]


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See also in sourсe #XX -- [ Pg.58 ]

See also in sourсe #XX -- [ Pg.301 ]




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Blocking Contact Structure of the Photoconductive Target

Partially Blocked Contacts

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