Interface Junction

Interface (Junction) in an electrochemical cell, it represents the location where two distinct phases come in contact with each other solid-liquid (electrode-solution), two liquids of different concentrations and/or compositions (reference electrode-solution), etc. Nernstian a reversible redox process that follows equilibria equations. 

Figure C2.15.8. The p-njimction (a) p-type andn-type materials, (b) depletion layer fonnation at the p-n interface or junction and (c) p-n junction laser action.

Liquid Junction Potentials A liquid junction potential develops at the interface between any two ionic solutions that differ in composition and for which the mobility of the ions differs. Consider, for example, solutions of 0.1 M ITCl and 0.01 M ITCl separated by a porous membrane (Figure 11.6a). Since the concentration of ITCl on the left side of the membrane is greater than that on the right side of the membrane, there is a net diffusion of IT " and Ck in the direction of the arrows. The mobility of IT ", however, is greater than that for Ck, as shown by the difference in the... 

Fig. 13. Schematic of a microscopic view of contact interface where constriction resistance originates in the constriction of current flow through the touching metallic junctions (a spots) of the mating surfaces. The arrows and lines indicate the flow of current.

The main experimental techniques used to study the failure processes at the scale of a chain have involved the use of deuterated polymers, particularly copolymers, at the interface and the measurement of the amounts of the deuterated copolymers at each of the fracture surfaces. The presence and quantity of the deuterated copolymer has typically been measured using forward recoil ion scattering (FRES) or secondary ion mass spectroscopy (SIMS). The technique was originally used in a study of the effects of placing polystyrene-polymethyl methacrylate (PS-PMMA) block copolymers of total molecular weight of 200,000 Da at an interface between polyphenylene ether (PPE or PPO) and PMMA copolymers [1]. The PS block is miscible in the PPE. The use of copolymers where just the PS block was deuterated and copolymers where just the PMMA block was deuterated showed that, when the interface was fractured, the copolymer molecules all broke close to their junction points The basic idea of this technique is shown in Fig, I. 

Another technique that has proved useful in establishing chemical bonding of coupling agents at interfaces is inelastic electron tunneling spectroscopy (ITES). For example. Van Velzen [16] examined 3-(trimethoxysilyl)propanethiol by this technique. Approximately monolayer quantities of this silane were adsorbed on the barrier oxide of an aluminum-aluminum oxide-metal tunneling junction two metals were investigated, lead and silver. It was concluded that the silane is... 

An important consideration is the effect of filler and its degree of interaction with the polymer matrix. Under strain, a weak bond at the binder-filler interface often leads to dewetting of the binder from the solid particles to formation of voids and deterioration of mechanical properties. The primary objective is, therefore, to enhance the particle-matrix interaction or increase debond fracture energy. A most desirable property is a narrow gap between the maximum (e ) and ultimate elongation ch) on the stress-strain curve. The ratio, e , eh, may be considered as the interface efficiency, a ratio of unity implying perfect efficiency at the interfacial Junction. 

The interface between the two solutions ZnS04/H2S04 and the associated liquid junction potential. ... 

Contacts are the elementary building blocks for all electronic devices. These include interfaces between semiconductors of different doping type (homojunctions) or of different composition (heterojunctions), and junctions between a metal and a semiconductor, which can be either rectifying (Schotlky junction) or ohmic. Because of their primary importance, the physics of semiconductor junctions is largely dealt with in numerous textbooks [11, 12]. We shall concentrate here on basic aspects of the metal-semiconductor (MS) and, above all, metal-insulator-semiconductor (MIS) junctions, which arc involved in the oiganic field-effect transistors. 

The usual way to visualize a junction is to draw an eneigy diagram that shows the bottom of the conduction band Er and the top of the valence band Ev as a function of distance. The so-called band curvature that appears at both sides of the junction interface reveals a variation in the potential with a distance in the direction perpendicular to the junction surface. The formation of an MS barrier is depicted in Figure 14-1. 

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