GaN-Based Transistors

C4.1 General remarks on GaN-based transistors and potential for high temperature/power operation C4.2 GaN FET structures MESFET, MISFET, JFET and MODFET... 

However, the key components to provide the power generating functionality are based on semiconductors. Novel materials and transistor structures based on InP, SiGe and GaN represent an area of extensive R D activities with emphasis on high power, low noise and high operation frequencies. The performance of a real device such as the phase noise of a microwave oscillator depends both on the noise properties of the transistor and on the loss tangent of the oxide material which forms the stabilising resonator. Therefore, material and device related R D activities both on semiconductors and on oxides are essential to open new horizons for microwave communication and sensor applications. 

Kang, B., Mehandra, R., Kim, S., Ren, E, Fitch, R., Gillespie, J., Moser, N., lessen, G., Jenkins, T. and Dettmer, R. (2005c) Hydrogen sensors based on SC2O3/ AlGaN/GaN high electron mobUity transistors , Physica Status Solidi (c), 2(7), 2672-2675. 

Chen, C.-R, Ganguly, A., Lu, C.-Y. et al. (2011) Ultrasensitive in situ label-free DNA detection using a GaN nanowire-based extended-gate field-effect-transistor sensor. Anal. Chem., 83 (6), 1938-1943. 

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