Auger electron spectroscopy silicon wafers

Sample preparation. Thin films of PBTMSS for Rutherford backscattering spectroscopy (RBS) and general plasma etching studies were spun on polished silicon wafers from a 3.5% solution in chlorobenzene using a photoresist spinner. The films were baked for 10 to 20 min. at 105-120 X in air. PBTMSS films for Auger electron spectroscopy (AES) studies were spin-coated on silicon wafers previously coated with 2000 A of gold. Films for IR studies were spin-coated onto NaCl plates. 

Micrometer-Scale Imaging of Native Oxide on Silicon Wafers by Using Scanning Auger Electron Spectroscopy... 

In recent development of the semiconductor industries, thermal oxide film thickness of less than 5 nm has been used in semiconductor devices such as metal-oxide-semiconductor (MOS) structures. Thickness of less than 5 nm is almost near the thickness of a native oxide film on the surface of silicon wafer. Therefore the characterization of ultra thin native oxide film is important in the semiconductor process technology. The secondary electron microscopy (SEM), the scanning Auger electron microscopy (SAM), the atomic force microscopy (AFM) and the X-ray photoelectron spectroscopy (XPS) might be the useful characterization method for the surface of the silicon wafers. 

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