Silicon arsenic

Fluorine also reacts with other halogens, forming interhalogen compounds. While with bromine and iodine it reacts vigorously at ordinary temperatures, with chlorine the reaction occurs at 200°C. Such interhalogen products with these halogens include iodine heptafluoride, bromine trifluoride, bromine pentafluoride, and chlorine trifluoride. Metalloid elements, such as arsenic, silicon, selenium, and boron also inflame in a stream of fluorine, forming fluorides. 

Rhenium combines with phosphorus, arsenic, silicon, selenium, and tellurium at elevated temperatures forming binary compounds. The metal, however, is stable in hydrogen and nitrogen at high temperatures. 

Nielsen FH. 1982. Possible future implications of nickel, arsenic, silicon, vanadium, and other ultratrace elements in human nutrition. In Clinical and Biochemical Nutritional Aspects of Trace Elements. New York, NY Alan R. Liss, Inc., 379-404. 

Grooves 5 are formed in a substrate 1 of either cadmium telluride, cadmium zinc telluride, gallium arsenic, silicon or sapphire. A layer 4 of Hgi.yCd,Te is formed at the bottom and at the sides of the grooves. Next, the whole structure is covered by a p-type Hgi.xCd,Te layer (y < x), in which n-type regions 3 are formed. 

Phenylfluorone also forms coloured complexes with many metals, e.g., Sn, Sb, Ti, Fe(III), Nb, and Ta. Low concentrations of arsenic, silicon, and fluoride do not interfere in the formation of the germanium complex. Citric and oxalic acids are used to mask Mo, V, Sn, and Ti [19,20]. Preliminary separation of germanium as GeCU by extraction or distillation renders the phenylfluorone method specific for germanium. 

As you will see later, some elements have intermediate properties between those of metals and non-metals and are called metalloids or semimetals. Examples include arsenic, silicon and germanium. 

Table 13. Si(lll)lxl-As surface Silicon-arsenic bond length, silicon-arsenic-silicon bond ang ...

Fig. 24. (a) Top and (b) side views of the atomic structure of Si(l 1 l)lxl-As. The values of silicon-arsenic bond length R), silicon-arsenic-silicon bond angle and outward displacement of the As atom from the position of a Si atom in the first layer of an unreconstructed surface M) are listed in Table 13. As atoms are shown in black and Si atoms in white. 

Downes, M.T., An automated determination of low reactive phosphorus concentrations in natural waters in the presence of arsenic, silicon and mercuric chloride. Water Research 12, 743,1978. 

They are formed from the binary compounds by substitution of S or Se by a second non-metal, frequently arsenic, silicon, germanium, or tellurium. Such a choice of elements is evidence of the covalent character of the bonding in the rare earth sulfides and selenides. 

Micro-constituents of Unknown Significance.—Bromine, Nickel, Molybdenum, Silver, Arsenic, Silicon, together Awth the ultramicro elements. 

Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. 

Oldhamite, see Calcium sulfide Opal, see Silicon dioxide Orpiment, see Arsenic trisulfide Oxygen powder, see Sodium peroxide... 

Fig. 5. Bipolar transistor (a) schematic and (b) doping profiles of A, arsenic ion implanted into the silicon of the emitter ( -type) B, boron ion implanted into the silicon of the base (p-type) C, antimony ion implanted into the buried layer ( -type) and D, the epi layer...

Many organic peroxides of metals have been hydrolyzed to alkyl hydroperoxides. The alkylperoxy derivatives of aluminum, antimony, arsenic, boron, cadmium, germanium, lead, magnesium, phosphoms, silicon, tin, and zinc yield alkyl hydroperoxides upon hydrolysis (10,33,60,61). 

Organomineral peroxides of antimony arsenic, boron, magnesium, tin, cadmium, lead, silicon, and 2inc have been prepared by autoxidation and some are Hsted in Table 3 (33,44,60,93,115). For example, dimethyl cadmium reacts with oxygen to form methylperoxy methyl cadmium [69331-62-0] and bis(methylperoxy) cadmium. 

Arsenic from the decomposition of high purity arsine gas may be used to produce epitaxial layers of III—V compounds, such as Tn As, GaAs, AlAs, etc, and as an n-ty e dopant in the production of germanium and silicon semiconductor devices. A group of low melting glasses based on the use of high purity arsenic (24—27) were developed for semiconductor and infrared appHcations. 

The less common heteroatoms are those other than nitrogen, oxygen and sulfur (arid selenium and tellurium which are treated alongside sulfur), i.e. phosphorus, arsenic, antimony, bismuth, the halogens, silicon, germanium, tin, lead, boron and the transition metals. 

Thompson and Tracy carried out tests in a moist ammoniacal atmosphere on stressed binary copper alloys containing zinc, phosphorus, arsenic, antimony, silicon, nickel or aluminium. All these elements gave alloys susceptible to stress corrosion. In the case of zinc the breaking time decreased steadily with increase of zinc content, but with most of the other elements there was a minimum in the curve of content of alloying elements against breaking time. In tests carried out at almost 70MN/m these minima occurred with about 0-2% P, 0-2% As, 1% Si, 5% Ni and 1% Al. In most cases cracks were intercrystalline. 

Unsolvated organomagnesium compounds have been recommended for the synthesis of organometallic derivatives of mercury, boron, aluminum, silicon, germanium, tin, phosphorus, arsenic, and antimony6-8 and have been used in procedures for the alkylation of aromatic rings and for the production of various polymerization catalysts.4 9... 

Heating with the following solids, their fusions, or vapours (a) oxides, peroxides, hydroxides, nitrates, nitrites, sulphides, cyanides, hexacyano-ferrate(III), and hexacyanoferrate(II) of the alkali and alkaline-earth metals (except oxides and hydroxides of calcium and strontium) (b) molten lead, silver, copper, zinc, bismuth, tin, or gold, or mixtures which form these metals upon reduction (c) phosphorus, arsenic, antimony, or silicon, or mixtures which form these elements upon reduction, particularly phosphates, arsenates,... 

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... 

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