Ion implantation applications

Applications Ion implantation is widely employed to improve the life of tools. Thus press tools, dies and gear cutters can be treated to increase their durability by three times or more. Nitrogen-implanted tungsten carbide drawing dies for copper and iron wire can be improved up to fivefold. By implanting chromium, aluminium or silicon a considerable increase in the corrosion resistance of steel can be obtained. Implantation of chromium into aircraft bearing alloys has improved their durability in marine environments . 

Applications, ion implantation, 142 Assembly, unit processes, 5t Atoms, implanted, depth distribution... 

The complexity of the apparatus needed for ion implantation makes this method of case hardening of limited application. Further, the case depth is considerably lower than that produced by carburizing or nitriding. The depth of implantation of nitrogen in a steel is about 0.00006 cm (19), ie, so thin that it is difficult to measure the hardness profile by conventional microhardness measurements. 

The improvement in wear resistance from ion implantation is shown in Figure 10 (20). However, the thin case cannot sustain very heavy loads. Hence this application for improved wear resistance is limited to special situations, eg, low loads. 

Recent applications of e-beam and HF-plasma SNMS have been published in the following areas aerosol particles [3.77], X-ray mirrors [3.78, 3.79], ceramics and hard coatings [3.80-3.84], glasses [3.85], interface reactions [3.86], ion implantations [3.87], molecular beam epitaxy (MBE) layers [3.88], multilayer systems [3.89], ohmic contacts [3.90], organic additives [3.91], perovskite-type and superconducting layers [3.92], steel [3.93, 3.94], surface deposition [3.95], sub-surface diffusion [3.96], sensors [3.97-3.99], soil [3.100], and thermal barrier coatings [3.101]. 

Wolfson, R. G., Application Specific Electronic Materials by Ion Implantation and MOCVD, Proc. of Conf. on High Performance Inorganic Coatings, Monterey, CA, G.A.M.I., Gorham, ME 04038 (1988)... 

The United States leads in basic research related to implantation processes and in the development of equipment for conventional applications of ion implantation. Japan appears to have the initiative in the development of equipment for ion microbeam technologies. 

As an example of binary clusters for magnetic applications, we present the study performed on Ni-Co alloy [78]. The Co-Ni phase diagram was investigated by performing sequential ion implantation in silica of Co and Ni at the same energy of ISOkeV (Rp 150nm) but with different fluences in order to have a constant total Co+Ni fluence (15 x lO ions/cm or 30 x 10 ions/cm ). For the 1 1 Co Ni ratio, we also performed sequential implants at... 

One of the more important applications of ion implantation is well engineering at relatively high ion energies. For the protection of dynamic random access memories from soft errors, different structures have been proposed and employed. The conventional procedure is to use epitaxial wafers well engineering beneath the active p- and n-channels provides a less expensive alternative. 

Arto Lietoila, Richard B. Gold, James F. Gibbons, and Lee A. Christel, Temperature Distributions and Solid Phase Reaction Rates Produced by Scanning CW Beams Arto Lietoila and James F. Gibbons, Applications of CW Beam Processing to Ion Implanted Crystalline Silicon... 

C.A. Stolte, Ion Implantation and Materials for GaAs Integrated Circuits C.G. Kirkpatrick, R.T. Chen, D.E. Holmes, P.M. Asbeck, K.R. Elliott, R.D. Fairman, and J.R. Oliver, LEC GaAs for Integrated Circuit Applications J.S. Blakemore and S. Rahimi, Models for Mid-Gap Centers in Gallium Arsenide... 

PE foams containing gold particles which can be moulded or machined into shapes are being developed for applications where atomic particle reflectance or absorption is needed. Uses in neutron radiation environments and in ion implantation technology are envisaged. Uses may also develop from the high electrical conductivity of gold. 

A. Leitoila and J. F. Gibbons, Applications of CW Beam Processing to Ion Implanted Crystalline Silicon... 

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