Annealing conventional

Fig. 7, Weight losses for Si3N4-6% 203-2% AI2O3 during microwave annealing, Conventional heating counterparts showed weight losses <0,6 wt % for all heating conditions.

The development of a sharp COE texture in the finished strip requires complex control of numerous variables. The conventional commercial process (18) involves hot-rolling a cast ingot at ca 1370°C to a thickness of about 2 mm, annealing at 800—1000°C, and then cold-rolling to a final thickness of 0.27—0.35 mm in two steps of 70 and 50%, respectively, with a recrystallization (800—1000°C) aimeal in between. The cold-roUed strip is decarburized (800°C) to ca 0.003% C in mixtures of wet results in a primary recrystallized stmcture containing grains of the COE... 

The contact between the aluminium layers and the ceramic substrate requires a joining material which will wet both metal and ceramic, and solders such as the conventional Pb-Sn alloy have been used which are molten during the annealing process. The contact between the solder and the aluminium layer is frequently unsatisfactoty because of the intervention of the AI2O3 layer, and a practical solution appears to be to place drree layers of metal clrromium in contact widr the aluminium, copper in contact with the clrromium, and gold between the copper layer and the solder. 

More conventional annealing behaviour was found by Zahn, Collins and Collins for Cr(CO)g. Both in vacuo and under a lOO-atm pressure of carbon monoxide, thermal treatment gave reformation of Cr(CO)6 with, at least qualitatively, the usual shape of the annealing curve. This was interpreted as being a simple thermal reaction, represented as ... 

Peter and Wang [266] invented a channel flow cell for rapid growth of CdTe films they showed that 2 p,m Aims can be deposited in less than 20 min, as opposed to the 2-3 h normally required in the conventional stirred single batch cells. The as-deposited films were structurally more disordered than the conventional ones, but after annealing and type conversion they became suitable for fabrication of efficient solar cells. A test cell with an AMI.5 efficiency approaching 6% was fabricated using a film prepared in the channel cell. 

The decomposition of formic acid over evaporated Pd-Au alloy films has been studied by Clarke and Rafter (69) the same reaction on Pd-Au alloy wires was studied by Eley and Luetic (128). The alloy films were prepared in a conventional high vacuum system by simultaneous evaporation of the component metals from tungsten hairpins. The alloy films were characterized by X-ray diffraction and electron microscopy. The X-ray diffractometer peaks were analyzed by a method first used by Moss and Thomas (SO). It was found that alloys deposited at a substrate temperature of 450°C followed by annealing for one hour at the same temperature were substantially homogeneous. Electron microscopy revealed that all compositions were subject to preferred orientation (Section III). 

As an example of the latter technique, Volkman et al. demonstrated the feasibility of using spin-cast zinc oxide nanoparticles encapsulated in 1-dodecanethiol to fabricate a functional transistor.44 The zinc oxide was deposited on a thermally grown silicon dioxide layer on a conventional silicon wafer, with thermally evaporated gold source and drain electrodes. As reported, the process requires very small particles (3nm or less) and a 400 °C forming gas anneal. A similar approach was also reported by Petrat, demonstrating n-channel thin-film transistor operation using a nanoparticle solution of zinc oxide dispersed onto a thermally grown silicon dioxide layer on a conventional... 

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