Amorphous silicon nitride thin films

Lustig, N. Kanicki J. (1989). Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors, J. Appl. Phys., Vol. 65, 3951-3957, ISSN 0003-6951... 

Silicon oxides (SiOx) are the most widely used thin films in silicon microelectronic and micromechanical devices. Similar to silicon nitride (Section 5.5.4), these amorphous films exhibit dielectric properties. Silicon oxide is often utilized as part of a dielectric membrane, as a passivation or insulating layer, or as a sacrificial layer, which can be etched with hydrofluoric acid (HF)-containing etchants. Two different approaches to forming a silicon oxide thin film are... 

Amorphous silicon nitride (a-Si3N4) is used extensively in the microelectronics industry in the form of thin films, which are prepared by both normal and reactive sputtering, chemical vapor deposition (CVD), ion-beam-assisted deposition, and ion... 

Lim, B. C. Choi, Y. J. Choi, J. H. Jang, J. (2000). Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Plasma Treated Silicon Nitride, IEEE Trans. Electron Device, Vol. 47,367-371, ISSN 0018-9383... 

Another important strategy is the adaptation of efficient PV semiconductor thin-films and nanostructures for effective use in PEC applications. Recent research in this area has focused on material classes with inherent bandgap tuning capabilities such as the amorphous silicon compounds (including silicon carbides and nitrides) [109, 112-114, 131, 132], and polycrystalline copper chalcopyrite compounds [133-137]. 

Amorphous Thin Films Currently, thin amorphous films of silicon nitride for applications as masking layers and as diffusion barriers during semiconductor processing are produced by gas-phase reactions of silicon tetrachloride or silane with ammonia, in the presence of hydrogen as carrier gas. Today, the standard GVD process is augmented by complex molecular excitation methods that include PACVD, laser-excited GVD (LECVD) and photosensitized GVD (PHCVD) enhance-... 

IR data (vSiN 820-833 cm ) were used to characterise SiN films formed by a variety of CVD techniques. The IR spectra of amorphous SiOxN3 thin films included vSiO and vSiN features at 1105 cm", 865 cm respectively Two other reports have been made of IR spectra of CVD-produced silicon nitride and oxynitride films " " The FTIR spectrum of an SisN4 powder shows a feature at 1200 cm corresponding to the presence of Si-O units ... 

The multilayer nanocomposite films containing layers of quasi-spherical Fe nanoparticles (d — 5.8 nm) separated by dielectric layers from boron nitride (BN) are synthesized by the repeated alternating deposition of BN and Fe onto a silicon substrate [54]. In this work the authors managed to realize the correlation in the arrangement of Fe nanoparticles between the layers the thin BN layer deposited on the Fe layer has a wave-like relief, on which the disposition of Fe nanoparticles is imprinted as a result, the next Fe layer deposited onto BN reproduces the structure of the previous Fe layer. Thus, a three-dimensional ordered system of the nanoparticles has been formed on the basis of the initial ordered Fe nanoparticle layer deposited on silicon substrate [54]. The analogous three-dimensional structure composed of the Co nanoparticles layers, which alternate the layers of amorphous A1203, has been obtained by the PVD method [55]. 

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