Bridgman vertical

Seung Jae Moon, Charn-Jung Kim, Sung Tack Ro. Effects of buoyancy and periodic rotation on the melt flow in a vertical Bridgman configuration. Int J Heat and Mass Transf 40 1X05, 1997. 

Figure 1. Schematic diagrams of several commonly used systems for melt crystal growth of electronic materials (a) vertical Bridgman, (b) Czochralski, and (c) small-scale floating-zone systems.

Group II-VI materials (e.g., CdTe, HgCdTe) Detectors Vertical Bridgman, horizontal Bridgman... 

Figure 3. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman system.

Figure 8. Striation patterns revealed by etching of gallium-doped InSb crystal grown in vertical unstable Bridgman system by Kim et al. (46). (a) Irregular pattern caused by chaotic convection, (b) Regular pattern caused by time-...

Figure 9. Thermocouple measurement as a function of time with increasing strength of an applied transverse magnetic field in a vertical Bridgman growth system by Kim (62). Oscillations are damped by the field.

Figure 12. Axial segregation data for the growth of gallium-doped germanium in a vertical Bridgman furnace. The figure is taken from Wang (6).

Vertical Bridgman-Stockbarger System Case Study of Confined Growth System... 

Analysis of Heat Transfer. In the vertical Bridgman-Stockbarger system shown in Figure la, the axial temperature gradient needed to induce solidification is created by separating hot and cold zones with a diabatic zone in which radial heat flow from the ampoule to the furnace is suppressed. Analyses of conductive heat transfer have focused on this geometry. 

Figure 16. Sample isotherms and flow fields for the growth of GaGe in a vertical Bridgman system as a function ofRat. Streamlines are spaced at equal intervals between the maximum (or minimum) for the flow cells and zero.

Figure 2. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman process. From Theory of Transport Processes in Single Crystal Growth from the Melt, by R. A. Brown, AJChE Journal, Vol. 34, No. 6, pp. 881-911, 1988, [29]. Reproduced by permission of the American Institute of Chemical Engineers copyright 1988 AIChE.

The next step is to produce nearly perfect single-crystal boules of silicon from the ultrapure polycrystalline silicon. Many techniques have been developed to accomplish this, and they all rely on a similar set of concepts that describe the transport process, thermodynamically controlled solubility, and kinetics [8]. Three important methods are the vertical Bridgman-Stockbarger, Czochralski, and floating zone processes, fully described in Fundamentals of Crystal Growth by Rosenberger [9]. 

Lan, C. W. (2005), Flow and segregation control by accelerated rotation for vertical Bridgman growth of cadmium zinc telluride ACRT versus vibration, J. Crystal Growth, 274 (3-4), 379-386. 

Local Fe states (using MOssbauer spectroscopy) and thermal expansion coefficient in FeIn2S4 single crystals grown by the directional crystallization of the melt (vertical Bridgman growth) have been studied. 

S. Brandon and J. J. Derby, Internal Radiative Transport in the Vertical Bridgman Growth of Semitransparent Crystals," J. Cryst. Growth, 110, pp. 481-500,1991. 

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