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Zinc Telluride ZnTe

Electrodeposition of ZnTe in aqueous medium has been widely reported [112-115]. Thin films of ZnTe were prepared electrochemically for the first time by Basol in 1988 employing a two-step process, which involved sequential electrodeposition of Te and Zn stacking layers from aqueous electrolytes and subsequent annealing. [Pg.105]

Formation of single-phase ZnTe on zinc substrates at 640 K by using electrochemical ion exchange and chemical reaction/alloying with Te species, supplied to the substrate as a vapor from TeCU-containing eutectic LiCl-KCl molten salts, was reported recently [118]. ZnTe films with a smooth dense surface and particle diameters less than about 0.8 p,m were obtained, by properly adjusting the TeCU content and the reaction time. [Pg.106]

Zinc sulfide, ZnS, sphalerite (zinc blende) zinc sulfide, ZnS, wurtzite zinc selenide, ZnSe zinc telluride, ZnTe, cubic zinc telluride, ZnTe, hexagonal zinc polonide, ZnPo zinc aluminum selenide, ZnAl2Se4 zinc indium selenide, ZnIn2Se4 zinc indium telluride, Znhi2Te4. [Pg.48]

Zinc telluride, ZnTe, was deposited on quartz, silicon, InAs, and GaSb substrates using Zn[TeSi(SiMe3)3]2 at temperatures between 250 °C and 350 °C. On InAs (orientation not specified) a cubic ZnTe layer was obtained. Problems of stoichiometry are encountered at temperatures below 325 °C because decomposition of the precursor is incomplete, while at higher temperatures (above 350 °C) the deposited ZnTe decomposes into Zn (which evaporates) and involatile elemental tellurium which remains. The results with the analogous cadmium precursor (1.4 torr, 290 °C) indicate that the CdTe films may be of better stoichiometry than those of ZnTe, with XRD results indicating that on a Si substrate the hexagonal phase is predominantly... [Pg.1036]

Reaction with tellurium powder in alkaline solution yields red crystalline zinc telluride, ZnTe. [Pg.991]

Zinc telluride (ZnTe) has a direct band gap of 2.25 eV at room temperature. It is usually applied in switching devices and in solar cells. The electrodeposition of ZnTe in ionic liquids was investigated by Lm et al. [23]. ZnTe was obtained on Ni... [Pg.25]

Zinc telluride ZnTe n F43m fee Zinc blende Fig. 4.1-131... [Pg.665]

Zinc telluride ZnTe 180(6) 93 -298 6>d from X-ray intensities from powders... [Pg.667]

Table ft.1-139 Phonon frequencies/wavenumbers at symmetry points for zinc compounds. Zinc oxide (ZnO), fundamental optical modes, T = 300 K, from Raman spectroscopy zinc sulfide (ZnS), T = 300 K zinc selenide (ZnSe), from Raman spectroscopy and luminescence zinc telluride (ZnTe), RT, from neutron scattering... [Pg.667]

Zinc telluride ZnTe mp 0.6 Estimated from hole mobility... [Pg.670]

Zinc telluride ZnTe 10.3 RT Reflectivity derived from refraction data... [Pg.672]

See other pages where Zinc Telluride ZnTe is mentioned: [Pg.105]    [Pg.1350]    [Pg.286]    [Pg.750]    [Pg.788]    [Pg.2002]    [Pg.2137]    [Pg.742]    [Pg.780]    [Pg.1948]    [Pg.2083]    [Pg.2169]    [Pg.2303]    [Pg.1981]    [Pg.2102]    [Pg.70]    [Pg.665]    [Pg.665]    [Pg.665]    [Pg.666]    [Pg.666]    [Pg.668]    [Pg.668]    [Pg.669]    [Pg.670]    [Pg.670]    [Pg.670]    [Pg.671]    [Pg.672]    [Pg.836]    [Pg.518]    [Pg.726]    [Pg.762]    [Pg.1826]    [Pg.1930]    [Pg.824]    [Pg.876]   


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Tellurides

Zinc telluride

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